Method for producing nitride crystal and nitride crystal
View Patent ↗A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 μm, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm 3 for the intended crystal growth.
1. A GaN starting material for producing a GaN crystal, comprising:
a material having an angle of repose and comprising a plurality of polycrystalline GaN particles having a maximum diameter of from 0.5 to 1 mm,
wherein the material has a bulk density of from 0.7 to 4.5 g/cm 3 .
2. The GaN starting material according to claim 1 , wherein the material comprises a plurality of particles formed through aggregation of the polycrystalline GaN particles having the maximum diameter of from 0.5 to 1 mm.
3. The GaN starting material according to claim 2 , wherein the particles formed through aggregation have a maximum diameter of not smaller than 1 mm.
4. The GaN starting material according to claim 1 , wherein the angle of repose is less than 45°.
5. The GaN starting material according to claim 1 , wherein the bulk density is from 0.8 to 3.6 g/cm 3 .
6. The GaN starting material according to claim 1 , wherein the material has an oxygen concentration in a crystal of from 10 to 500 ppm.
7. The GaN starting material according to claim 1 , wherein the bulk density is from 0.9 to 3.2 g/cm 3 .
8. The GaN starting material according to claim 1 , wherein the bulk density is from 1.0 to 3.0 g/cm 3 .
9. The GaN starting material according to claim 1 , wherein the bulk density is from 1.1 to 3.0 g/cm 3 .
10. The GaN starting material according to claim 1 , wherein the angle of repose is not smaller than 15°.
11. The GaN starting material according to claim 1 , wherein the angle of repose is not smaller than 25°.
12. A method for producing a GaN crystal, comprising:
growing a GaN crystal in the presence of nitrogen in a supercritical state and/or a subcritical state and a GaN starting material which comprises a material having an angle of repose, having a bulk density of from 0.7 to 4.5 g/cm 3 and comprising a plurality of polycrystalline GaN particles having a maximum diameter of from 0.5 to 1 mm.
13. The method according to claim 12 , wherein the material comprises a plurality of particles formed through aggregation of the polycrystalline GaN particles having the maximum diameter of from 0.5 to 1 mm.
14. The method according to claim 12 , wherein the particles formed through aggregation have a maximum diameter of not smaller than 1 mm.
15. The method according to claim 12 , wherein the angle of repose is less than 45°.
16. The method according to claim 12 , wherein the bulk density is from 0.8 to 3.6 g/cm 3 .
17. The method according to claim 12 , wherein the material has an oxygen concentration in a crystal of from 10 to 500 ppm.
18. The method according to claim 12 , wherein the bulk density is from 0.9 to 3.2 g/cm 3 .
19. The method according to claim 12 , wherein the bulk density is from 1.0 to 3.0 g/cm 3 .
20. The method according to claim 12 , wherein the bulk density is from 1.1 to 3.0 g/cm 3 .