Structure of a semiconductor array
View Patent ↗A structure of a semiconductor array comprises multiple semiconductor units, an isolation layer and a decomposed or buffer unit. Multiple semiconductor units combined the semiconductor array. The isolation layer coated each semiconductor unit. The decomposed or buffer unit coated the isolation layer and filled between each semiconductor unit to enhance structure of the semiconductor units. Wherein, the isolation layer protected by edge of the semiconductor units and the decomposed or buffer unit.
1. A structure of a compound semiconductor light emitting display array comprising:
a backplane driver, wherein the backplane driver having a first surface and a second surface;
a plurality of compound semiconductor light emitting unit disposed in an array on the first surface of the backplane driver having a gap between any two adjacent ones,
wherein the each compound semiconductor light emitting unit having a first surface and a second surface,
wherein the second surface of the each compound semiconductor light emitting unit having a cathode and an anode, and wherein the cathode and the anode of the each compound semiconductor light emitting unit electrically connected to the first surface of the backplane driver;
a dam array aligned over the gap wherein the dam array having openings located above the first surface of the each compound semiconductor light emitting unit and wherein the each opening is aligned to the each compound semiconductor light emitting unit; and
wherein the cathode and the anode of the each compound semiconductor light emitting unit are separated from each other and electrically isolated from the adjacent electrodes of the adjacent compound semiconductor light emitting units by a polymer material and an air gap surrounded by the polymer material.
2. The structure of the compound semiconductor light emitting display array according to claim 1 , wherein the each compound semiconductor light emitting unit surrounded by a street region is electrically isolated from adjacent compound semiconductor units by an isolation layer.
3. The structure of the compound semiconductor light emitting display array according to claim 1 , wherein the each compound semiconductor light emitting unit is connected to the adjacent compound semiconductor unit via the polymer material in the street region.
4. The structure of the compound semiconductor light emitting display array according to claim 1 , wherein the backplane driver has integrated circuitries comprising data lines and scan lines and each compound semiconductor light emitting unit being controlled individually to display an image.
5. The structure of the compound semiconductor light emitting display array according to claim 1 , wherein the each opening having a size substantially the same as a size of the each compound semiconductor light emitting unit.
6. The structure of the compound semiconductor light emitting display array according to claim 1 , wherein the each opening containing a color conversion layer.
7. The structure of the compound semiconductor light emitting display array according to claim 1 , wherein the cathode and anode of the each compound semiconductor light emitting unit are bonded to the backplane driver by soldering.