IP Library Granted Patent US 9,461,009
Granted Patent B1
US 9,461,009 · App. 14/722,810 · Granted Oct 4, 2016

Method and apparatus for assembling a semiconductor package

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Quick Facts
Patent No.
US 9,461,009
App. No.
14/722,810
Granted
Oct 4, 2016
Kind
B1
Abstract

A method of packaging a semiconductor device is described. The method includes: attaching a first surface of a semiconductor die to a carrier; forming one or more first stud bumps on the carrier; using bond wires, electrically connecting one or more locations on a second surface of the semiconductor die to one or more first stud bumps; molding the semiconductor die, the first stud bumps, and the bond wires in an encapsulation material; removing the carrier from the bottom side of the semiconductor package exposing a portion of the first stud bumps; and attaching one or more solder balls to the exposed portion of the first stud bumps.

Claims (46)

1. A method of assembling a semiconductor package, the method comprising:

attaching a first surface of a semiconductor die to a carrier;

forming one or more first stud bumps on the carrier;

forming one or more second stud bumps on a second surface of the semiconductor die;

molding the semiconductor die, the first stud bumps, and the second stud bumps in a first encapsulation material;

exposing a to portion of the first stud bumps and second stud bumps through the first encapsulation material;

using bond wires, connecting the exposed to portion of one or more first stud bumps to the exposed to portion of one or more second stud bumps; and

removing the carrier from the bottom side of the semiconductor package exposing a bottom portion of the first stud bumps.

2. The method of claim 1 , further comprising electrically connecting two first stud bumps to each other using a bond wire.

3. The method of claim 1 , wherein the bond wires include a copper material, a gold material, a silver material, or an aluminum material.

4. The method of claim 1 , wherein the bond wires are insulator coated bond wires.

5. The method of claim 1 , wherein the bond wires include a ball bond on a first end and a stitch bond on a second end.

6. The method of claim 1 , wherein attaching the first surface of the semiconductor die to the carrier includes applying a die attach paste material to the carrier or a die attach film to the first surface of the semiconductor die.

7. The method of claim 1 , further comprising forming one or more third stud bumps on top of one or more bond wire ends.

8. The method of claim 7 , further comprising:

molding the bond wires and third stud bumps in a second encapsulation material; and

exposing a portion of the third stud bumps through the second encapsulation material.

9. The method of claim 8 , further comprising attaching one or more solder balls to the exposed portion of the third stud bumps.

10. A method of assembling a semiconductor package, the method comprising:

attaching a first surface of a semiconductor die to a carrier;

forming one or more first stud bumps on the carrier;

forming one or more second stud bumps on a second surface of the semiconductor die;

molding the semiconductor die and the first and second stud bumps in a first encapsulation material;

exposing a portion of the first and second stud bumps through the first encapsulation material;

using bond wires, electrically connecting the exposed portion of one or more first stud bumps to the exposed portion of one or more second stud bumps;

forming a third stud bump on top of one or more bond wire ends;

molding the bond wires and third stud bumps in a second encapsulation material;

exposing a portion of the third stud bumps through the second encapsulation material; and

attaching one or more solder balls to the exposed portion of the third stud bumps.

11. The method of claim 10 , wherein the diameter of the third stud bumps is equal to or greater than the diameter of the second stud bumps.

12. The method of claim 10 , wherein attaching the one or more solder balls further comprises plating the exposed portion of the third stud bumps before attaching the one or more solder balls.

13. The method of claim 10 , wherein the exposing a portion of the first and second stud bumps through the first encapsulation material further comprises grinding the encapsulant until a predetermined diameter of the first and second stud bumps is exposed.

14. The method of claim 10 , wherein the exposing a portion of the third stud bumps through the second encapsulation material comprises using a film-assisted molding technique.

15. The method of claim 10 , wherein the bond wires, the first stud bumps, the second stud bumps, and the third stud bumps include a copper material.

16. The method of claim 10 , further comprising:

removing the carrier from the bottom side of the semiconductor package exposing a portion of the first stud bumps; and

after removing the carrier, applying a passivation material to the bottom side of the package covering the exposed first surface of the semiconductor die and portion of the first stud bumps.

17. The method of claim 16 , further comprising: patterning an opening in the passivation material to allow electrical connectivity to one or more first stud bumps.

18. A semiconductor package, comprising:

a semiconductor die having a bonding pad;

a first stud bump formed on the bonding pad;

a second stud bump formed separate from the semiconductor die;

an encapsulation material encapsulating the semiconductor die, the first stud bump, and the second stud bump, wherein a top portion of the first and second stud bumps and a bottom portion of the second stud bump are exposed through the encapsulation material; and

a bond wire electrically connecting the exposed to portion of the first stud bump to the exposed to portion of the second stud bump.

19. The semiconductor package of claim 18 , wherein the bond wire is an insulator coated bond wire.

20. The method of claim 18 , further comprising a third stud bump formed on top of at least one bond wire end.

Assignments (4)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →