IP Library Granted Patent US 9,718,991
Granted Patent B2
US 9,718,991 · App. 14/723,488 · Granted Aug 1, 2017

Chemical mechanical polishing slurry

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Quick Facts
Patent No.
US 9,718,991
App. No.
14/723,488
Granted
Aug 1, 2017
Kind
B2
Abstract

A chemical mechanical polishing slurry for polishing a stainless steel substrate is provided, which comprises a content 10˜50 wt % of abrasive particles, a content 0.001˜2.0 wt % of a coolant, a content 0.001˜1.0 wt % of an oxidant, a content 10˜5000 ppm of a lubricity improver, and a content 10˜5000 ppm of a foam inhibitor. A particle size of the abrasive particles is in a range of 20˜500 nm. The alkaline polishing slurry according to the present invention is capable of increasing the polishing performance, surface quality, and surface passivation effect after the chemical-mechanical polishing process.

Claims (13)

1. A chemical mechanical polishing slurry having a pH value in a range of 8.5 to 13.5, and comprising:

abrasive particles with a content of 10 wt % to 50 wt %;

a coolant with a content of 0.001 wt % to 2.0 wt %;

an oxidant with a content of 0.001 wt % to 1.0 wt %;

a lubricity improver with a content of 10 ppm to 5000 ppm; and

a foam inhibitor with a content of 10 ppm to 5000 ppm, wherein a particle size of the abrasive particles is in a range of 20 nm to 500 nm; the lubricity improver is bisphenol A ethoxylate diacrylate; the polishing slurry is used for a chemical mechanical polishing on a stainless steel substrate.

2. The chemical mechanical polishing slurry as claimed in claim 1 further comprising a pH adjusting agent.

3. The chemical mechanical polishing slurry as claimed in claim 1 further comprising an aqueous solvent.

4. The chemical mechanical polishing slurry as claimed in claim 1 , wherein the abrasive particles are at least one selected from the group consisting of colloidal silica, high-temperature forming silica, colloidal aluminum oxide, crystalline aluminium oxide, nano silicon carbide, and nano crystalline diamond.

5. The chemical mechanical polishing slurry as claimed in claim 1 , wherein the coolant is at least one selected from the group consisting of glycol, polyethylene glycol, glycerol, and triethylene glycol.

6. The chemical mechanical polishing slurry as claimed in claim 1 , wherein the oxidant is at least one selected from the group consisting of oxalic acid, citric acid, tartaric acid, salicylic acid, malic acid, sorbic acid, fumaric acid, glacial acetic acid, valeric acid, malonic acid, adipic acid, polymethacrylic acid, sodium perchlorate, sodium chlorate, sodium chlorite, sodium hypochlorite, ferric nitrate, and ferric chloride.

7. The chemical mechanical polishing slurry as claimed in claim 1 , wherein the foam inhibitor is at least one selected from the group consisting of polydimethyl siloxane, and hexamethyldisiloxane.

8. The chemical mechanical polishing slurry as claimed in claim 1 , wherein the pH adjusting agent is at least one selected from the group consisting of potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, sodium carbonate, and potassium carbonate.

Assignments (3)
SECURITY INTEREST Recorded May 2, 2022
From: CHROMAFLO TECHNOLOGIES CORPORATION; FERRO CORPORATION; FERRO ELECTRONIC MATERIALS INC.; PRINCE ENERGY LLC; PRINCE MINERALS LLC; PRINCE SPECIALTY PRODUCTS LLC
To: CREDIT SUISSE AG, CAYMAN ISLANDS BRANCH, AS ADMINISTRATIVE AGENT
Reel/Frame 059845/0082 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 9, 2022
From: UWIZ TECHNOLOGY CO., LTD.
To: FERRO CORPORATION
Reel/Frame 058935/0746 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 31, 2015
From: YANG, YI HAN; LIU, WEN CHENG; HO, MING CHE; LU, MING HUI; CHANG, SONG YUAN
To: UWIZ TECHNOLOGY CO.,LTD.
Reel/Frame 035750/0332 →