Semiconductor device including first inductor of a spiral shape and a second inductor having an opening which is opposite the first inductor
A semiconductor device is configured to perform a transmission process and a reception process using a radio wave, includes a transmission unit configured to perform the transmission process, and includes a modulator having a first inductor of a spiral shape, and a reception unit configured to perform the reception process, which includes a local oscillator having a second inductor. The second inductor includes a first portion extending in a first direction, a second portion extending in a second direction and a third portion extending in a third direction. The second direction and the third direction intersect with the first direction. The first portion, second portion and third portion include a same conductor layer. The second portion has an end which is not connected with the first portion. The third portion has another end which is not connected with the first portion, and the end of the second portion and said another end of the third portion are located apart in a plan view.
1. A semiconductor device configured to perform a transmission process and a reception process using a radio wave, comprising:
a transmission unit configured to perform the transmission process, which includes a modulator having a first inductor of a spiral shape; and
a reception unit configured to perform the reception process, which includes a local oscillator having a second inductor,
wherein the second inductor comprises a first portion extending in a first direction, a second portion extending in a second direction and a third portion extending in a third direction,
wherein the second direction and the third direction intersect with the first direction,
wherein the first portion, the second portion and the third portion comprise a same conductor layer,
wherein the second portion has an end which is not directly connected with the first portion,
wherein the third portion has another end which is not directly connected with the first portion,
wherein the end of the second portion and said another end of the third portion are located apart in a plan view, and
wherein the second inductor comprises an opening and the second inductor is disposed so that the opening is located opposite to the first inductor.
2. A semiconductor device according to claim 1 , wherein a distance between the first inductor and the end of the second portion is greater than that of the first inductor and the first portion, and
wherein a distance between the first inductor and said another end of the third portion is greater than that of the first inductor and the first portion.
3. A semiconductor device according to claim 1 , wherein the second inductor has a horseshoe-shape.
4. A semiconductor device according to claim 1 , wherein the second inductor has a U-shape.
5. A semiconductor device according to claim 1 , wherein the second portion and the third portion of the second inductor are symmetric.
6. The semiconductor device according to claim 1 , further comprising:
a digital circuit arranged between the first and second inductors.
7. A semiconductor device comprising:
a low noise amplifier configured to amplify a radio signal from an antenna and output an reception signal;
a down converter configured to down-convert the reception signal;
a first divider coupled with the down converter;
a first local oscillator coupled with the first divider;
a modulator configured to modulate a transmission signal, which includes a first inductor of a spiral shape;
a second divider coupled with the modulator; and
a second local oscillator coupled with the second divider, which includes a second inductor,
wherein the second inductor comprises a first portion extending in a first direction, a second portion extending in a second direction and a third portion extending in a third direction,
wherein the second direction and the third direction intersect with the first direction,
wherein the first portion, the second portion and the third portion comprise a same conductor layer,
wherein the second portion has an end which is not directly connected with the first portion,
wherein the third portion has another end which is not directly connected with the first portion,
wherein the end of the second portion and said another end of the third portion are located apart in a plan view, and
wherein the second inductor comprises an opening and the second inductor is disposed so that the opening is located opposite to the first inductor.
8. A semiconductor device according to claim 7 , wherein a distance between the first inductor and the end of the second portion is greater than that of the first inductor and the first portion, and
wherein a distance between the first inductor and said another end of the third portion is greater than that of the first inductor and the first portion.
9. A semiconductor device according to claim 7 , wherein the second inductor has a horseshoe-shape.
10. A semiconductor device according to claim 7 , wherein the second inductor has a U-shape.
11. A semiconductor device according to claim 7 , wherein the second portion and the third portion of the second inductor are symmetric.
12. A semiconductor device configured to perform a transmission process and a reception process using a radio wave, comprising:
a transmission unit configured to perform the transmission process, which includes a modulator; and
a reception unit configured to perform the reception process, which includes a local oscillator,
wherein the modulator includes a first inductor of a spiral shape,
wherein the local oscillator includes a second inductor of a horseshoe-shape, and
wherein the second inductor comprises an opening and the second inductor is disposed so that the opening is located opposite to the first inductor.
13. The semiconductor device according to claim 12 , further comprising:
a digital circuit arranged between the first and second inductors.