Ultra-fast breakover diode
View Patent ↗An ultra-fast breakover diode has a turn on time T ON that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than one percent per ten degrees Celsius change. In another aspect of the invention, a breakover diode has a reverse breakdown voltage that is greater, in absolute magnitude, than the forward breakover voltage, where the forward breakover voltage is greater than +400 volts. Yet another aspect of the invention involves a string of series-connected breakover diode dice, along with a resistor string, in a packaged circuit. The packaged circuit acts like a single breakover diode having a large forward breakover voltage and a comparably large reverse breakdown voltage, even though the packaged circuit includes no discrete high voltage reverse breakdown diode. The packaged circuit is usable to supply a triggering current to a thyristor in a voltage protection circuit.
1. A method of manufacture comprising:
(a) forming an N type buffer layer of epitaxial semiconductor material on a P type layer of substrate semiconductor material, wherein a bottom surface of the P type layer is a bottom semiconductor surface, wherein the N type buffer layer has a N type dopant concentration of at least 1×10 15 atoms/cm 3 and of no more than 1×10 16 atoms/cm 3 ;
(b) forming an N− type base layer of epitaxial semiconductor material such that the N− type base layer is disposed on the N type buffer layer, wherein the N− type base layer has an N type dopant concentration of at least 1×10 15 atoms/cm 3 and of no more than 1×10 16 atoms/cm 3 , and wherein the N− type base layer is less than 130 microns thick;
(c) forming a P type base layer into the N− type base layer, wherein the P type base layer extends down into the N− type base layer from an upper semiconductor surface;
(d) forming an N+ type annular emitter region that extends down into the P type base layer, wherein the N+ type annular emitter region surrounds a cathode short region that extends up to the upper semiconductor surface, wherein the cathode short region has a width at the upper semiconductor surface of less than 0.250 millimeters;
(e) forming a cathode metal electrode on the upper semiconductor surface so that the cathode metal electrode contacts the N+ type annular emitter region and the cathode short region;
(f) forming a floating metal ring on the upper semiconductor surface, wherein the floating metal ring surrounds the cathode metal electrode at the upper semiconductor surface; and
(g) forming an anode metal electrode on the bottom semiconductor surface, wherein (a) through (g) are steps in the manufacture of a breakover diode, wherein the breakover diode has a turn on time (T ON ) of 0.3 microseconds or less.
2. The method of manufacture of claim 1 , wherein the turn on time T ON is defined as a time period between a first time when a breakover current starts to flow through the breakover diode and a second time when a voltage across the breakover diode reaches zero volts, and wherein a voltage of at least four hundred volts is across the breakover diode at the first time when said breakover current starts to flow.
3. The method of manufacture of claim 1 , wherein the P type base region has a depth, wherein the P type base region has a periphery at the upper semiconductor surface, and wherein a minimum radius of curvature R of the periphery of the P type base region at the upper semiconductor surface is at least twice the depth.
4. The method of manufacture of claim 1 , further comprising:
forming a P+ type guard ring into the N− type base layer from the upper semiconductor surface, wherein the P+ type guard ring surrounds the P type base region at the upper semiconductor surface.
5. The method of manufacture of claim 1 , wherein the P type layer and the N type buffer layer are parts of a semiconductor die, wherein the semiconductor die has four side edges, and wherein a PN junction between the P type layer and the N type buffer layer extends in a plane across the semiconductor die to each of the four side edges.
6. The method of manufacture of claim 1 , wherein the thickness of the N type buffer layer of epitaxial semiconductor material is 15-25 microns.
7. The method of manufacture of claim 1 , further comprising:
forming a peripheral P type isolation diffusion region that surrounds the N− type base layer of epitaxial semiconductor material and that extends from the bottom semiconductor surface to the upper semiconductor surface.
8. The method of manufacture of claim 4 , further comprising:
forming an N+ type channel stopper ring that surrounds the P+ type guard ring at the upper semiconductor surface.
9. A method comprising:
(a) forming an N type buffer layer of epitaxial semiconductor material on a P type layer of substrate semiconductor material, wherein a bottom surface of the P type layer is a bottom semiconductor surface, wherein the N type buffer layer has an N type dopant concentration of at least 1×10 15 atoms/cm 3 and of no more than 1×10 16 atoms/cm 3 ;
(b) forming an N− type base layer of epitaxial semiconductor material such that the N− type base layer is disposed on the N type buffer layer, wherein the N− type base layer is less than 130 microns thick;
(c) forming a P type base region into the N− type base layer, wherein the P type base region extends down into the N− type base layer from an upper semiconductor surface;
(d) forming an N+ type annular emitter region that extends down into the P type base region, wherein the N+ type annular emitter region surrounds a cathode short region that extends up to the upper semiconductor surface, wherein the cathode short region has a width at the upper semiconductor surface of less than 0.250 millimeters;
(e) forming a cathode metal electrode on the upper semiconductor surface so that the cathode metal electrode contacts the N+ type annular emitter region and the cathode short region; and
(f) forming an anode metal electrode on the bottom semiconductor surface, wherein (a) through (f) are steps in the manufacture of a breakover diode
(g) forming a floating metal ring on the upper semiconductor surface, wherein the floating metal ring surrounds the cathode metal electrode at the upper semiconductor surface.
10. The method of claim 9 , wherein the N− type base layer has an N type dopant concentration of at least 1×10 15 atoms/cm 3 and of no more than 1×10 16 atoms/cm 3 .
11. The method of claim 9 , wherein the breakover diode has a turn on time (T ON ) of 0.3 microseconds or less.
12. The method of claim 9 , wherein the P type base region has a depth, wherein the P type base region has a periphery at the upper semiconductor surface, and wherein a minimum radius of curvature R of the periphery of the P type base region at the upper semiconductor surface is at least twice the depth.
13. The method of claim 9 , further comprising:
forming a P+ type guard ring into the N− type base layer from the upper semiconductor surface, wherein the P+ type guard ring surrounds the P type base region at the upper semiconductor surface.
14. The method of claim 9 , wherein the P type layer and the N type buffer layer are parts of a semiconductor die, wherein the semiconductor die has four side edges, and wherein a PN junction between the P type layer and the N type buffer layer extends in a plane across the semiconductor die to each of the four side edges.
15. The method of claim 9 , wherein the thickness of the N type buffer layer of epitaxial semiconductor material is 15-25 microns.
16. The method of claim 9 , further comprising:
forming a peripheral P type isolation diffusion region that surrounds the N− type base layer of epitaxial semiconductor material and that extends from the bottom semiconductor surface to the upper semiconductor surface.
17. The method of claim 13 , further comprising:
forming an N+ type channel stopper ring that surrounds the P+ type guard ring at the upper semiconductor surface.