Power monitoring device and transmitter having same
View Patent ↗A power monitoring device includes: a silicon support layer being attached to a PCB board; a glass layer disposed above the silicon support layer; at least one sensing element disposed on the glass layer; and at least one metal pad disposed on the glass layer. The sensing element is suspended over a laser element that is attached to the PCB board and configured for sensing light directed thereto that is emitted by the laser element. A cavity is defined in the silicon support layer and configured for accommodating the laser element. A transmitter that includes the power monitoring device is also provided.
1. A transmitter comprising:
a PCB board;
a laser element disposed on the PCB board and attached thereto;
a power monitoring device disposed on the PCB board above the laser element and attached to the PCB board;
a lens part disposed on the PCB board and above the laser element and the power monitoring device;
an IC driver disposed on the PCB board and connected with the laser element through bond wires; and
a feedback circuit for the IC driver connected with the power monitoring device through a plurality of bond wires; wherein:
the power monitoring device comprises a silicon support layer being attached to the PCB board, a glass layer disposed above the silicon support layer, at least one sensing element disposed on the glass layer, and at least one metal pad disposed on the glass layer;
the sensing element is suspended over the laser element and configured for sensing light directed thereto that is emitted by the laser element; and
the silicon support layer comprises a cavity configured for accommodating the laser element.
2. The transmitter of claim 1 , wherein the laser element comprises a VCSEL or a VCSEL array.
3. The transmitter of claim 1 , wherein the at least one sensing element is a PIN photodiode comprising a p-type amorphous silicon layer, an n-type amorphous silicon layer, and an intrinsic silicon layer disposed in between the p-type amorphous silicon layer and the n-type amorphous silicon layer; the transmitter further comprising a transparent electrode layer buried between the sensing element and the glass layer, and a contact electrode layer disposed on the sensing element.
4. The transmitter of claim 3 , wherein the transparent electrode layer is made of ITO.
5. The transmitter of claim 1 , wherein the power monitoring device further comprises an antireflection layer disposed underneath the glass layer.
6. The transmitter of claim 1 , wherein the sensing element has a rectangular shape, and covers a predetermined percentage of a light distribution emitted from an aperture of the laser element.
7. The transmitter of claim 1 , wherein the power monitoring device comprises a plurality of sensing elements, the sensing elements each having a rectangular shape, being distributed symmetrically or asymmetrically, and covering an edge portion of a light distribution emitted from an aperture of the laser element.
8. The transmitter of claim 1 , wherein the sensing element has a ring shape, and covers an edge portion or an inner portion of a light distribution emitted from an aperture of the laser element.
9. The transmitter of claim 1 , wherein the sensing element has a circular shape, and covers a center portion of a light distribution emitted from an aperture of the laser element.
10. The transmitter of claim 1 , wherein a slant side wall is formed in the silicon support layer so as to define the cavity for accommodating the laser element.
11. A power monitoring device comprises:
a silicon support layer being attached to a PCB board;
a glass layer disposed above the silicon support layer;
at least one sensing element disposed on the glass layer; and
at least one metal pad disposed on the glass layer; wherein:
the sensing element is suspended over a laser element that is attached to the PCB board and configured for sensing light directed thereto that is emitted by the laser element; and
the silicon support layer comprises a cavity configured for accommodating the laser element.
12. The power monitoring device of claim 11 , wherein the at least one sensing element is a PIN photodiode comprising a p-type amorphous silicon layer, an n-type amorphous silicon layer, and an intrinsic silicon layer disposed in between the p-type amorphous silicon layer and the n-type amorphous silicon layer; the transmitter further comprising a transparent electrode layer buried between the sensing element and the glass layer, and a contact electrode layer disposed on the sensing element.
13. The power monitoring device of claim 12 , wherein the transparent electrode layer is made of ITO.
14. The power monitoring device of claim 11 , wherein the power monitoring device further comprises an antireflection layer disposed underneath the glass layer.
15. The power monitoring device of claim 11 , wherein the sensing element has a rectangular shape, and covers a predetermined percentage of a light distribution emitted from an aperture of the laser element.
16. The power monitoring device of claim 11 , wherein the power monitoring device comprises a plurality of sensing elements, the sensing elements each having a rectangular shape, being distributed symmetrically or asymmetrically, and covering an edge portion of a light distribution emitted from an aperture of the laser element.
17. The power monitoring device of claim 11 , wherein the sensing element has a ring shape, and covers an edge portion or an inner portion of a light distribution emitted from an aperture of the laser element.
18. A transmitter comprising:
a PCB board;
a laser element disposed on the PCB board;
a power monitoring device disposed on the PCB board above the laser element; and
a lens part disposed on the PCB board and above the laser element and the power monitoring device; wherein:
the power monitoring device comprises a silicon support layer being attached to the PCB board, a glass layer disposed above the silicon support layer, at least one sensing element disposed on the glass layer, and at least one metal pad disposed on the glass layer;
the sensing element is suspended over the laser element and configured for sensing light directed thereto that is emitted by the laser element; and
the silicon support layer comprises a cavity configured for accommodating the laser element.
19. The transmitter of claim 18 , wherein the sensing element has a circular shape, and covers a center portion of a light distribution emitted from an aperture of the laser element.
20. The transmitter of claim 18 , wherein a slant side wall is formed in the silicon support layer so as to define the cavity for accommodating the laser element.