Manufacturing method and program of semiconductor device

1. A semiconductor device manufacturing method, comprising:

(a) forming a plurality of semiconductor chips on a main surface of a semiconductor wafer;

(b) electrically testing each of the semiconductor chips;

(c) dicing the semiconductor wafer into individual semiconductor chips and assembling each of the semiconductor chips into a package to be a semiconductor device;

(d) subjecting the packages to a burn-in test; and

(e) based on measurement data obtained in step (b), determining which of the semiconductor chips out the semiconductor chips which passed the electrical testing requires the burn-in test to be performed,

wherein step (c) comprises sorting the packages assembled with the semiconductor chips, respectively, into:

a first lot including packages having semiconductor chips determined in step (e) to require the burn-in test to be performed; and

a second lot including packages having semiconductor chips determined in step (e) not to require the burn-in test to be performed, and

wherein, in step (d), only the packages included in the first lot are subjected to the burn-in test.

2. The semiconductor device manufacturing method according to claim 1 ,

wherein the measurement data used in step (e) is measurement data obtained in a current-related test performed in step (b).

3. The semiconductor device manufacturing method according to claim 1 , further comprising:

(f) based on the measurement data obtained in step (b) and results of the burn-in test performed in step (d) concerning semiconductor devices manufactured in the past, generating a determination model for determining, based on the measurement data obtained in step (b) on the semiconductor chips, whether the semiconductor chips require the burn-in test to be performed,

wherein, in step (e), whether each of the semiconductor chips requires the burn-in test to be performed is determined using the determination model and based on the measurement data obtained in step (b).

4. A semiconductor device manufacturing method, comprising:

(a) forming a plurality of semiconductor chips on a main surface of a semiconductor wafer,

(b) electrically testing each of the semiconductor chips;

(c) dicing the semiconductor wafer into individual semiconductor chips and assembling each of the semiconductor chips into a package to be a semiconductor device;

(d) electrically testing the packages;

(e) subjecting the packages to a burn-in test; and

(f) based on measurement data obtained in step (b), determining which of the semiconductor chips out the semiconductor chips which passed the electrical testing requires the burn-in test to be performed,

wherein step (d) comprises sorting the packages, after being electrically tested, into:

a first lot including, out of the packages, those packages each including a semiconductor chip determined in step (f) to require the burn-in test to be performed; and

a second lot including, out of the packages, those packages determined in step (f) not to require the burn-in test to be performed, and

wherein, in step (e), only the packages included in the first lot are subjected to the burn-in test.

5. The semiconductor device manufacturing method according to claim 4 ,

wherein the measurement data used in step (f) is measurement data obtained in a current-related test performed in step (b).

6. The semiconductor device manufacturing method according to claim 4 , further comprising

(g) based on the measurement data obtained in step (b) and results of the burn-in test performed in step (e) concerning semiconductor devices manufactured in the past, generating a determination model for determining, based on the measurement data obtained in step (b) on the semiconductor chips, whether the semiconductor chips require the burn-in test to be performed,

wherein, in step (f), whether each of the semiconductor chips requires the burn-in test to be performed is determined using the determination model and based on the measurement data obtained in step (b).

7. A non-transitory computer readable storage medium having program instructions embodied therein, the program instructions executable by a computer to cause a computer to execute the procedures for:

(a) accepting input of measurement data obtained in an electrical test performed on a plurality of semiconductor chips formed on a main surface of a semiconductor wafer and extracting, from the measurement data, data associated with a predetermined test item;

(b) linking the data extracted in procedure (a) to identification information for the semiconductor chips;

(c) after the semiconductor wafer is diced into the semiconductor chips and the semiconductor chips are assembled into packages to be semiconductor devices, respectively, determining whether each of the packages requires a burn-in test to be performed and outputting information about results of the determination; and

(d) based on information about the measurement data and results of the burn-in test obtained concerning semiconductor devices manufactured in the past, generating in step (b) a determination model for determining which of the semiconductor chips out the semiconductor chips which passed the electrical test requires the burn-in test to be performed.

8. The non-transitory computer readable storage medium according to claim 7 ,

wherein, in step (c) whether each of the semiconductor chips requires the burn-in test to be performed is determined using the determination model.

9. The semiconductor device manufacturing method according to claim 1 , wherein step (b) further comprises:

electrically testing each of the semiconductor chips to identify non-defective semiconductor chips; and

determining whether each of the non-defective semiconductor chips requires the burn-in test to be performed.

10. The semiconductor device manufacturing method according to claim 9 , wherein step (c) comprises sorting the non-defective semiconductor chips into the first lot which require the burn-in test, and into the second lot which do not require the burn-in test.

11. The semiconductor device manufacturing method according to claim 2 , wherein the measurement data obtained in current-related test includes data on at least one of leak current, reset current, active current, and IDDQ.

12. The semiconductor device manufacturing method according to claim 3 , wherein the measurement data obtained in step (b) comprises current measurement data, and

wherein the determination model is represented by a predetermined numerical expression which includes parameters and variables representing current values extracted from the current measurement data.

13. The semiconductor device manufacturing method according to claim 12 , wherein the measurement data obtained in step (b) includes frequency measurement data and voltage measurement data.

14. The semiconductor device manufacturing method according to claim 13 , wherein the frequency measurement data and the voltage measurement data are used to complement the current measurement data.

15. The semiconductor device manufacturing method according to claim 3 , further comprising:

generating a new determination model by at least one of mechanical learning and data mining, using accumulated test result data on semiconductor chips and lots manufactured in the past as learning data.