Methods for plasma processing
Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
1. A method for plasma-based coating of thin films on a substrate, said method comprising:
placing a substrate on a support within a chamber such that a side of said substrate to be coated faces at least one electrode of a plurality of electrodes within said chamber, and a minimum gap between said one electrode and said substrate is less than a width of said one electrode, wherein said chamber is connected to a vacuum pump, a gas pressure in said chamber is maintained in a range of 50 Pascals to 2000 Pascals, said plurality of electrodes within said chamber have lengths greater than their widths or heights, and said at least one electrode has a front side opposite said support for said substrate;
maintaining a part of said substrate adjacent said support at a temperature less than 200° C.;
providing AC power to at least a first electrode of said plurality of electrodes to form a plasma between said first electrode and a second electrode of said plurality of electrodes, and between said first electrode and said substrate providing ion bombardment of said substrate; and
injecting a first gas into a space between opposing faces of said first and second electrodes to flow towards said substrate in the plasma between said first and second electrodes so that said gas deposits a thin film on said substrate as it flows adjacent said front side of said at least one electrode without recirculation.
2. The method of claim 1 wherein said AC power is one of RF or VHF power.
3. The method of claim 1 wherein said length of said one electrode is greater than four times said width of said one electrode or said height of said one electrode.
4. The method of claim 1 wherein a minimum gap between any respective one of said plurality of electrodes and said substrate on said support is less than the width of said respective electrode.
5. The method of claim 1 wherein an inter-electrode gap is between 5 mm and 20 mm.
6. The method of claim 1 wherein a flow of mixed gas is around at least one of said plurality of electrodes to an exhaust.
7. The method of claim 1 wherein a first power density in an inter-electrode gap is higher than a second power density between said one electrode and said substrate; and a power ratio between said first power density and said second power density is less than a factor of 5.
8. The method of claim 1 wherein said first gas comprises a compound of at least one of nitrogen or oxygen; and a second gas contains a silicon compound to form a film with said first gas that contains silicon oxynitride or silicon nitride.
9. The method of claim 1 wherein a dielectric film is deposited on said substrate.
10. The method of claim 1 wherein a transparent, metal-containing, electrically conducting film is deposited on said substrate.
11. A method for plasma-based film deposition of silicon-based materials on a substrate, said method comprising:
placing a substrate on a support structure in a chamber such that a surface of said substrate to be coated faces a first, front surface of an electrode positioned within said chamber and forms a volume between, said surfaces, said first front surface of said electrode facing said support structure, a minimum gap between said surfaces being less than a width of said electrode, said chamber being connected to a vacuum pump, and a gas pressure in said chamber being maintained at less than 2000 Pascals;
maintaining said substrate at a temperature under 200 degrees Celsius;
injecting a first reactant gas containing a non-silicon-based compound such that the first reactant gas flows toward said substrate adjacent a second surface of said electrode;
providing AC power to said electrode to form a first plasma by activating said first gas adjacent said second surface, and further, forming a plasma between the front side of said electrode and said substrate providing ion bombardment of said substrate; and
injecting a second gas into said flowing activated first gas to form a mixed gas, said second gas comprising a silicon-containing compound, and depositing a silicon-based thin film upon the substrate, wherein said mixed gas flows adjacent said front side of said electrode and then to an exhaust.
12. The method of claim 11 wherein said AC power is one of radiofrequency (RF) or very high frequency (VHF) power.
13. The method of claim 11 wherein said minimum gap between said first side of said electrode and said substrate is between 5 mm and 20 mm.
14. The method of claim 11 wherein the flow of said mixed gas is around said electrode to said exhaust.
15. The method of claim 11 wherein said first gas comprises a compound of at least one of nitrogen or oxygen, and said second gas contains a silicon compound to form a film with said first gas that contains silicon oxynitride or silicon nitride.
16. The method of claim 11 wherein a dielectric film is deposited on said substrate.
17. The method of claim 11 wherein a transparent, metal-containing, electrically conducting film is deposited on said substrate.