Interconnect structure for coupling an electronic unit and an optical unit, and optoelectronic module
View Patent ↗An optoelectronic module is provide and includes an electronic unit, an optical unit, and an interconnect structure. The electronic unit is capable of outputting and/or receiving electric signals, while the optical unit is capable of converting the electric signals into optical signals. The interconnect structure connects the electronic unit and the optical unit, and includes an electrically conducting substrate and a pair of transmission leads connecting electronic unit and the optical unit. The pair of transmission leads includes a signal lead and a ground lead having lower impedance than the signal lead.
1. An optoelectronic module, comprising:
an electronic unit outputting and/or receiving electric signals;
an optical unit for converting the electric signals into optical signals;
an interconnect structure connecting the electronic unit and the optical unit, the interconnect structure comprising an electrically conducting substrate and a pair of transmission leads connecting the electronic unit and the optical unit and having a signal lead and a ground lead having lower impedance than the signal lead; and
a second electronic unit processing electric signals generated by the optical unit.
2. The optoelectronic module according to claim 1 , wherein the ground lead has a width that is larger than a width of the signal lead.
3. The optoelectronic module according to claim 2 , wherein the ground lead has a width that is at least five times larger than the width of the signal lead.
4. The optoelectronic module according to claim 2 , wherein the interconnect structure includes a ground plane layer underlying the ground lead.
5. The optoelectronic module according to claim 4 , wherein the ground lead connects to the ground plane layer with an electrical connection.
6. The optoelectronic module according to claim 5 , wherein the electrical connection comprises a via.
7. The optoelectronic module according to claim 6 , wherein an impedance of the signal lead is defined by the width and a distance to the ground plane layer.
8. The optoelectronic module according to claim 1 , wherein the interconnect structure includes a pair of receiver leads connecting the optical unit and the second electronic unit to each other.
9. The optoelectronic module according to claim 1 , wherein the electronic unit includes a driver circuit and the optical unit includes an optical transmitter.
10. The optoelectronic module according to claim 9 , further comprising an optical receiver and an amplifying circuit for amplifying output signals of the optical receiver.
11. The optoelectronic module according to claim 10 , wherein the optical receiver includes an array of PIN (positive intrinsic negative) photo diodes.
12. The optoelectronic module according to claim 11 , wherein the amplifying circuit includes a transimpedance amplifier (TIA) array.
13. The optoelectronic module according to claim 12 , wherein the optical unit includes an array of vertical cavity surface emitting lasers (VCSEL).
14. The optoelectronic module according to claim 13 , further comprising a 12-channel VCSEL array mounted in the electrically conductive substrate.
15. An optoelectronic module, comprising:
an electronic unit outputting and/or receiving electric signals;
an optical unit for converting the electric signals into optical signals; and
an interconnect structure connecting the electronic unit and the optical unit, the interconnect structure comprising an electrically conducting substrate and a pair of transmission leads connecting the electronic unit and the optical unit and having a signal lead and a ground lead having lower impedance than the signal lead;
wherein the electronic unit includes a driver circuit and the optical unit includes an optical transmitter.
16. The optoelectronic module according to claim 15 , further comprising an optical receiver and an amplifying circuit for amplifying output signals of the optical receiver.
17. The optoelectronic module according to claim 16 , wherein the optical receiver includes an array of PIN (positive intrinsic negative) photo diodes.
18. The optoelectronic module according to claim 17 , wherein the amplifying circuit includes a transimpedance amplifier (TIA) array.
19. The optoelectronic module according to claim 18 , wherein the optical unit includes an array of vertical cavity surface emitting lasers (VCSEL).
20. The optoelectronic module according to claim 19 , further comprising a 12-channel VCSEL array mounted in the electrically conductive substrate.
21. An optoelectronic module, comprising:
an electronic unit outputting and/or receiving electric signals;
an optical unit for converting the electric signals into optical signals;
a second electronic unit processing electric signals generated by the optical unit;
an interconnect structure connecting the electronic unit and the optical unit, the interconnect structure comprising an electrically conducting substrate and a pair of transmission leads connecting the electronic unit and the optical unit and having a signal lead and a ground lead having lower impedance than the signal lead;
a ground plane layer underlying the ground lead, wherein the ground lead connects to the ground plane layer using a via;
wherein an impedance of the signal lead is defined by the width and a distance to the ground plane layer, and the ground lead has a width that is larger than a width of the signal lead.
22. The optoelectronic module according to claim 21 , wherein the interconnect structure includes a pair of receiver leads connecting the optical unit and the second electronic unit to each other.