Diamond coated electrodes for electrochemical processing and applications thereof
An electrode for an ozone generator or chlorine generator includes an electrically conductive substrate, a doped-Si layer disposed over the conductive substrate, and a boron-doped diamond (BDD) layer disposed over the doped-silicon layer. The doped-silicon layer defines a discrete architecture that maintains adhesion throughout a high temperature CVD boron-doped diamond process. Another electrode having a PVD nitrogen-doped diamond (ta-C:N) layer disposed over a conductive substrate is also provided.
1. An electrode for an ozone generator or chlorine generator, the electrode comprising:
an electrically conductive substrate;
a doped-silicon layer disposed over the electrically conductive substrate, the doped-silicon layer consisting of silicon and a dopant selected from the group consisting of boron and phosphorus, the doped-silicon layer defining a discrete architecture that maintains adhesion throughout a high temperature chemical vapor deposition boron-doped diamond process, the discrete architecture including an orderly pattern of elevated islands separated by gaps or an array of dimples; and
a boron-doped diamond (BDD) layer disposed over the doped-silicon layer.
2. The electrode of claim 1 further comprising a barrier layer interposed between the doped-silicon layer and the electrically conductive substrate to limit diffusion of doped-Si into the electrically conductive substrate.
3. The electrode of claim 2 wherein the barrier layer is a semiconductor or metal nitride or oxide or nitro-oxide layer.
4. The electrode of claim 3 wherein the barrier layer is TiN or ZrN.
5. The electrode of claim 1 wherein the discrete architecture has a pattern with features less than 100 nm.
6. The electrode of claim 1 wherein the discrete architecture is formed using a mask.
7. The electrode of claim 1 wherein the electrically conductive substrate can also act as an electrical contact between a power source and the boron-doped diamond.
8. The electrode of claim 1 wherein the discrete architecture is a textured surface.
9. An electrode for an ozone generator or chlorine generator, the electrode comprising:
an electrically conductive substrate;
a silicon layer doped with boron or phosphorus disposed over the electrically conductive substrate, the silicon layer having formula Si, the silicon layer doped with boron or phosphorus defining a discrete architecture that maintains adhesion throughout a high temperature chemical vapor deposition boron-doped diamond process, the discrete architecture including an orderly pattern of elevated islands separated by gaps or an array of dimples; and
a boron-doped diamond (BDD) layer disposed over the silicon layer doped with boron or phosphorus.
10. The electrode of claim 9 further comprising a barrier layer interposed between the silicon layer doped with boron or phosphorus and the electrically conductive substrate to limit diffusion of doped-Si into the electrically conductive substrate.
11. The electrode of claim 10 wherein the barrier layer is a semiconductor or metal nitride or oxide or nitro-oxide layer.
12. The electrode of claim 11 wherein the barrier layer is TiN or ZrN.
13. The electrode of claim 9 wherein the discrete architecture has a pattern with features less than 100 nm.
14. The electrode of claim 9 wherein the discrete architecture is formed using a mask.
15. The electrode of claim 9 wherein the electrically conductive substrate can also act as an electrical contact between a power source and the boron-doped diamond.
16. The electrode of claim 9 wherein the discrete architecture is a textured surface.