Substrate structure and device employing the same
A substrate structure and a device employing the same are disclosed. An embodiment of the disclosure provides the substrate structure including a flexible substrate and a first barrier layer. The flexible substrate has a top surface, a side surface, and a bottom surface. The first barrier layer is disposed on and contacting the top surface of the flexible substrate, wherein the first barrier layer consists of Si, N, and Z atoms, wherein the Z atom is selected from a group of H, C, and O atoms, and wherein Si of the first barrier layer is present in an amount from 35 to 42 atom %, N of the first barrier layer is present in an amount from 10 to 52 atom %, and Z of the first barrier layer is present in an amount from 6 to 48 atom %.
1. A substrate structure, comprising:
a flexible substrate having a top surface, a side surface, and a bottom surface; and
a first barrier layer disposed on and contacting the top surface of the flexible substrate, wherein the first barrier layer consists of Si, N, and Z atoms, wherein the Z atom is selected from a group of H, C, and O atoms, and wherein Si of the first barrier layer is present in an amount from 35 to 42 atom %, N of the first barrier layer is present in an amount from 10 to 52 atom %, and Z of the first barrier layer is present in an amount from 6 to 48 atom %.
2. The substrate structure as claimed in claim 1 , wherein an adhesion strength between the flexible substrate and the first barrier layer is 5B measured according to ASTM D3330.
3. The substrate structure as claimed in claim 1 , wherein the first barrier layer exhibits a water vapor transmission rate (WVTR) of less than 0.1 g/m 2 day, as determined by ASTM F1249-06 at 60° C. and 90% RH.
4. The substrate structure as claimed in claim 1 , wherein the first barrier layer has a thickness between 30 nm and 10 μm.
5. The substrate structure as claimed in claim 1 , wherein the first barrier layer has a visible light transmittance equal to or more than 80%.
6. The substrate structure as claimed in claim 1 , wherein the top surface of the flexible substrate has a first region and a second region, and the first barrier layer is disposed on the first region.
7. The substrate structure as claimed in claim 1 , wherein the first barrier layer covers the entire top surface of the flexible substrate.
8. The substrate structure as claimed in claim 7 , wherein the first barrier layer further extends to the side surface of the flexible substrate.
9. The substrate structure as claimed in claim 1 , further comprising:
a carrier, wherein the flexible substrate is disposed on the carrier; and
a de-bonding layer disposed between the carrier and the flexible substrate.
10. The substrate structure as claimed in claim 1 , further comprising:
a second barrier layer disposed on and contacting the first barrier layer, wherein the second barrier layer is silicon nitride, silicon oxide, silicon oxynitride, or a combination thereof.
11. The substrate structure as claimed in claim 10 , wherein the first barrier layer has a top surface and a side surface, and the second barrier covers the entire top surface of the first barrier layer.
12. The substrate structure as claimed in claim 11 , wherein the second barrier layer further extends to the side surface of the first barrier layer.
13. A device, comprising:
the substrate structure as claimed in claim 1 ; and
an electronic element disposed on the first barrier layer of the substrate structure.
14. The device as claimed in claim 13 , wherein the electronic element comprises a touch sensing element, driving element, display element, or a combination thereof.
15. The device as claimed in claim 13 , further comprising:
a second barrier layer disposed on and contacting the first barrier layer, and the electronic element disposed on the second barrier layer.
16. The device as claimed in claim 15 , wherein the second barrier layer is silicon nitride, silicon oxide, silicon oxynitride, or a combination thereof.
17. The device as claimed in claim 15 , further comprising:
a third barrier layer disposed on the electronic element, wherein the third barrier layer consists of Si, N, and Z atoms, wherein the Z atom is selected from a group of H, C, and O atoms, and wherein Si of the first barrier layer is present in an amount from 35 to 42 atom %, N of the first barrier layer is present in an amount from 10 to 52 atom %, and Z of the first barrier layer is present in an amount from 6 to 48 atom %.
18. The device as claimed in claim 13 , further comprising:
a passivation layer disposed on the electronic element.
19. The device as claimed in claim 18 , wherein the electronic element has a top surface and a side surface, and wherein the passivation layer covers the entire top surface of the electronic element.
20. The device as claimed in claim 19 , wherein the passivation layer further extends to the side surface of the electronic element.