Method for forming thin film pattern
View Patent ↗A method for forming a thin film pattern includes: forming a first resist pattern on a substrate; forming a second resist pattern on the substrate and the first resist pattern, forming a first metal layer overlapping an exposed portion of the substrate and exposed portions of the first and second resist patterns; removing the second resist pattern and a portion of the first metal layer, through a first lift-off process to expose portions of the substrate and the first resist pattern; forming a second metal layer overlapping portions of each of the substrate, the first resist pattern and the first metal layer; and removing the first resist pattern and the first and second metal layers, through a second lift-off process, to form first and second metal patterns from remaining portions of the first and second metal layers. The first and second resist patterns have different dissolution characteristics.
1. A method for forming a thin film pattern, comprising:
forming a first resist pattern on a substrate;
forming a second resist pattern on the substrate and overlapping the first resist pattern on the substrate, the first and second resist patterns exposing a portion of the substrate;
forming a first metal layer overlapping the portion of the substrate exposed by the first and second resist patterns, overlapping the first resist pattern and overlapping the second resist pattern, to dispose the first and second resist patterns between the first metal layer and the substrate;
removing the first metal layer overlapping the second resist pattern and the second resist pattern disposed between the first metal layer and the substrate, through a first lift-off process to expose a portion of the substrate overlapped by the second resist pattern and to expose a portion of the first resist pattern overlapped by the second resist pattern;
forming a second metal layer overlapping portions of each of the substrate, the first resist pattern and the first metal layer which are exposed by the removed second resist pattern; and
removing the first resist pattern and removing the first metal layer and the second metal layer overlapping the first resist pattern, through a second lift-off process, to form the thin film pattern comprising: a first metal pattern and a second metal pattern from portions of the first metal layer and the second metal layer remaining after the removing the first and second resist patterns,
wherein the first resist pattern and the second resist pattern have different dissolution characteristics from each other.
2. The method of claim 1 , wherein the forming the first resist pattern comprises:
disposing the substrate on a stage, and discharging a first resist material onto a first portion of the substrate disposed on the stage, by using an inkjet head; and
curing the discharged first resist material at the first portion of the substrate disposed on the stage, by using a curing device disposed under the stage.
3. The method of claim 2 , wherein the forming the second resist pattern comprises:
discharging a second resist material onto a second portion of the substrate disposed on the stage and overlapping a portion of the first resist pattern, by using the inkjet head; and
curing the discharged second resist material at the second portion of the substrate disposed on the stage, by using the curing device disposed under the stage.
4. The method of claim 3 , wherein the first metal layer and the second metal layer comprise different materials from each other.
5. The method of claim 4 , wherein
the first metal pattern is disposed on the substrate, and
the second metal pattern is disposed on the substrate and overlapping the first metal pattern disposed on the substrate.
6. The method of claim 5 , wherein the second metal pattern disposed on the substrate contacts a side surface of the first metal pattern disposed on the substrate.
7. The method of claim 6 , wherein in the first lift-off process,
the second resist pattern is removed by using a nonpolar solvent, and
the removing the second resist pattern by using the nonpolar solvent simultaneously removes the first metal layer overlapping the second resist pattern.
8. The method of claim 7 , wherein in the second lift-off process,
the first resist pattern is removed by using a polar solvent, and
the removing the first resist pattern by using the polar solvent simultaneously removes the first metal layer and the second metal layer overlapping the first resist pattern.
9. The method of claim 6 , wherein in the first lift-off process,
the second resist pattern is removed by using a polar solvent, and
the removing the second resist pattern by using the polar solvent simultaneously removes the first metal layer overlapping the second resist pattern.
10. The method of claim 9 , wherein in the second lift-off process,
the first resist pattern is removed by using a non-polar solvent, and
the removing the first resist pattern by using the non-polar solvent simultaneously removes the first metal layer and the second metal layer overlapping the first resist pattern.
11. The method of claim 1 , wherein the first metal pattern formed from the remaining portion of the first metal layer and the second metal pattern from the remaining portion of the second metal layer are spaced apart from each to expose a portion of the substrate.