Switchable solar cell devices
Exemplary embodiments provide a solar cell device, and method for forming the solar cell device by integrating a switch component into a solar cell element. The solar cell element can include a solar cell, a solar cell array and/or a solar cell panel. The integrated solar cell element can be used for a solar sensor, while the solar sensor can also use discrete switches for each solar cell area of the sensor. Exemplary embodiments also provide a connection system for the solar cell elements and a method for super-connecting the solar cell elements to provide a desired connection path or a desired power output through switch settings. The disclosed connection systems and methods can allow for by-passing underperforming solar cell elements from a plurality of solar cell elements. In embodiments, the solar cell element can be extended to include a battery or a capacitor.
1. A device comprising:
a solar cell element comprising a p-n junction and a plurality of solar cell terminals, the plurality of solar cell terminals including at least one p-type doped region and at least one n-type doped region; and
a switch component comprising a source region and a drain region integrated together with the solar cell element within an integrated circuit, wherein one of the p-type doped region or the n-type doped region of the solar cell terminals is formed within the drain region of the switch component in a semiconductor substrate of the integrated circuit.
2. The device of claim 1 , wherein the switch component is integrated together with the solar cell element to control the solar cell element.
3. The device of claim 1 , wherein the solar cell element comprises two solar cell terminals.
4. The device of claim 1 , wherein the p-n junction forms a semiconductor diode.
5. The device of claim 1 , wherein the solar cell element comprises a solar cell, a solar cell array, a solar cell panel, or a solar cell module.
6. The device of claim 1 , wherein the switch component comprises a metal oxide semiconductor (MOS)-based switch.
7. The device of claim 1 , wherein the switch component comprises a laterally diffused metal oxide semiconductor (LDMOS) transistor or a vertically diffused metal oxide semiconductor (VDMOS) transistor.
8. A solar sensor, comprising:
a plurality of solar cell areas, wherein at least one solar cell area of the plurality of solar cell areas comprises a p-n junction and a plurality of solar cell terminals, the plurality of solar cell terminals including at least one p-type doped region and at least one n-type doped region; and
a plurality of switches, wherein at least one switch component of the plurality of switches comprises a source region and a drain region integrated together with the at least one solar cell area within an integrated circuit, and one of the p-type doped region or the n-type doped region of the solar cell terminals is formed within the drain region of the at least one switch component in a semiconductor substrate of the integrated circuit.
9. The solar sensor of claim 8 , wherein the at least one switch component is integrated within an independently addressed one of the plurality of solar cell areas.
10. The solar sensor of claim 8 , wherein at least a second switch component of the plurality of switches is not integrated within an independently addressed one of the plurality of solar cell areas.
11. The solar sensor of claim 8 , wherein the at least one switch component comprises a component of a P-type metal oxide semiconductor (PMOS), an N-type metal oxide semiconductor (NMOS), a laterally diffused metal oxide semiconductor (LDMOS), or a vertically diffused metal oxide semiconductor (VDMOS) transistor.
12. A method for forming a solar cell device, comprising:
forming a solar cell element comprising a p-n junction and a plurality of solar cell terminals, the plurality of solar cell terminals including at least one p-type doped region and at least one n-type doped region on an integrated circuit;
forming a switch component comprising at least one source region and a drain region on the integrated circuit; and
integrating the switch component together with the solar cell element within a junction isolated region on the integrated circuit, wherein one of the p-type doped region or the n-type doped region of the solar cell terminals is formed within the drain region of the switch component in a semiconductor substrate of the integrated circuit.
13. The method of claim 12 , further comprising forming an electrical connection between the solar cell element and the switch component.
14. The method of claim 12 , wherein the switch component comprises a component of a metal oxide semiconductor (MOS)-based transistor switch.
15. The method of claim 14 , wherein the electrical connection is formed between a terminal of the switch component and a solar cell terminal of the plurality of solar cell terminals of the solar cell element.
16. The method of claim 12 , further comprising isolating the switch component and a first solar cell terminal of the solar cell element from a second solar cell terminal of the solar cell element.