Electrically testable microwave integrated circuit packaging
View Patent ↗An extension of conventional IC fabrication processes to include some of the concepts of flip-chip assemblies while producing a final “non-flip chip” circuit structure suitable for conventional packaging or for direct usage by customers. Multiple IC dies are fabricated on a semiconductor wafer in a conventional fashion, solder bumped, and singulated. The singulated dies are then flip-chip assembled onto a single tile substrate of thin-film material which has been patterned with vias, peripheral connection pads, and one or more ground planes. Once dies are flip-chip mounted to the thin-film tile, all of the dies on the entire tile may be probed using automated testing equipment. Once test probing is complete, the dies and tile are singulated into die/tile assemblies.
1. A microwave integrated circuit, including an integrated circuit die flip-chip assembled on a thin-film tile provisioned with probe-compatible connection pads, the flip-chipped die and thin-film tile forming a die/tile assembly wherein the probe-compatible connection pads are accessible for connection to probes after assembly of the integrated circuit die flip-chip on the thin-film tile.
2. The microwave integrated circuit of claim 1 , wherein at least some of the probe-compatible connection pads are configured as ground-signal-ground sets of pads.
3. The microwave integrated circuit of claim 1 , wherein the thin-film tile has a thickness of less than or equal to about 0.35 mm.
4. The microwave integrated circuit of claim 1 , wherein the thin-film tile has a thickness of less than or equal to about 0.23 mm.
5. The microwave integrated circuit of claim 1 , wherein the thin-film tile has a thickness of less than or equal to about 0.175 mm.
6. The microwave integrated circuit of claim 1 , wherein the thin-film tile is made of one of alumina or a low temperature co-fired ceramic.
7. The microwave integrated circuit of claim 1 , where the integrated circuit die is fabricated on a silicon-based substrate.
8. The microwave integrated circuit of claim 7 , wherein the silicon-based substrate is one of a silicon or silicon-on-insulator substrate.
9. The microwave integrated circuit of claim 1 , wherein the die/tile assembly is configured for wire-bonding to a circuit board.
10. The microwave integrated circuit of claim 1 , wherein the die/tile assembly is configured to be soldered directly to a circuit board.
11. The microwave integrated circuit of claim 1 , wherein the die/tile assembly is configured to be soldered directly to a circuit board using surface mounting methodologies.
12. The microwave integrated circuit of claim 1 , wherein the die/tile assembly is operable at frequencies at or above about 8 GHz.
13. The microwave integrated circuit of claim 1 , wherein the die/tile assembly is operable at frequencies at or above about 12 GHz.
14. The microwave integrated circuit of claim 1 , wherein the probe-compatible connection pads are disposed on the side of the thin-film tile on which the integrated circuit die is flip-chip assembled.
15. The microwave integrated circuit of claim 1 , wherein the probe-compatible connection pads are disposed on the side of the thin-film tile opposite from the side on which the integrated circuit die is flip-chip assembled.
16. The microwave integrated circuit of claim 1 , further including a ground plane formed on the side of the tile on which the integrated circuit die is flip-chip assembled, and electrically coupled to selected circuit elements of the integrated circuit die by means of solder bumps.
17. The microwave integrated circuit of claim 1 , further including a ground plane formed on the side of the tile opposite from the side on which the integrated circuit die is flip-chip assembled, and electrically coupled to selected circuit elements of the integrated circuit die by means of through-hole vias within the tile and solder bumps in electrical contact with the through-hole vias.
18. The microwave integrated circuit of claim 1 , further including:
(a) a first ground plane formed on the side of the tile on which the integrated circuit die is flip-chip assembled and electrically coupled to selected circuit elements of the integrated circuit die by means of solder bumps; and
(b) a second ground plane formed on the side of the tile opposite from the side on which the integrated circuit die is flip-chip assembled and electrically coupled to the first ground plane by through-hole vias within the tile.
19. A microwave integrated circuit, including an integrated circuit die flip-chip assembled on a thin-film tile provisioned with probe-compatible connection pads, the flip-chipped die and thin-film tile forming a die/tile assembly, wherein the probe-compatible connection pads are disposed on the side of the tile on which the integrated circuit die is flip-chip assembled, and wherein signal connections to the integrated circuit die are made from the side of the tile opposite from the side of the tile on which the integrated circuit die is flip-chip assembled.
20. A microwave integrated circuit including:
(a) a radio frequency circuit embodied an integrated circuit die on a silicon-based substrate;
(b) solder bumps positioned on the integrated circuit die; and
(c) a thin-film tile provisioned with probe-compatible connection pads and a plurality of vias within the tile, the thin-film tile being coupled to the integrated circuit die by means of the solder bumps, thereby forming a die/tile assembly;
wherein the probe-compatible connection pads are accessible for connection to probes after assembly of the integrated circuit die on the thin-film tile.
21. The microwave integrated circuit of claim 20 , wherein at least some of the probe-compatible connection pads are configured as ground-signal-ground sets of pads.
22. The microwave integrated circuit of claim 20 , wherein the thin-film tile has a thickness of less than or equal to about 0.35 mm.
23. The microwave integrated circuit of claim 20 , wherein the thin-film tile has a thickness of less than or equal to about 0.23 mm.
24. The microwave integrated circuit of claim 20 , wherein the thin-film tile has a thickness of less than or equal to about 0.175 mm.
25. The microwave integrated circuit of claim 20 , wherein the thin-film tile is made of one of alumina or a low temperature co-fired ceramic.
26. The microwave integrated circuit of claim 20 , wherein the silicon-based substrate is one of a silicon or silicon-on-insulator substrate.
27. The microwave integrated circuit of claim 20 , wherein the die/tile assembly is configured for wire-bonding to a circuit board.
28. The microwave integrated circuit of claim 20 , wherein the die/tile assembly is configured to be soldered directly to a circuit board.
29. The microwave integrated circuit of claim 20 , wherein the die/tile assembly is configured to be soldered directly to a circuit board using surface mounting methodologies.
30. The microwave integrated circuit of claim 20 , wherein the die/tile assembly is operable at frequencies at or above about 8 GHz.
31. The microwave integrated circuit of claim 20 , wherein the die/tile assembly is operable at frequencies at or above about 12 GHz.
32. The microwave integrated circuit of claim 20 , wherein the probe-compatible connection pads are disposed on the side of the thin-film tile on which the integrated circuit die is coupled.
33. The microwave integrated circuit of claim 20 , wherein the probe-compatible connection pads are disposed on the side of the thin-film tile opposite from the side on which the integrated circuit die is coupled.
34. The microwave integrated circuit of claim 20 , further including a ground plane formed on the side of the tile on which the integrated circuit die is coupled, and electrically coupled to selected circuit elements of the integrated circuit die by means of corresponding ones of the solder bumps.
35. The microwave integrated circuit of claim 20 , further including a ground plane formed on the side of the tile opposite from the side on which the integrated circuit die is coupled, and electrically coupled to selected circuit elements of the integrated circuit die by means of the vias within the tile and solder bumps in electrical contact with the vias.
36. The microwave integrated circuit of claim 20 , further including:
(a) a first ground plane formed on the side of the tile on which the integrated circuit die is coupled and electrically coupled to selected circuit elements of the integrated circuit die by means of corresponding ones of the solder bumps; and
(b) a second ground plane formed on the side of the tile opposite from the side on which the integrated circuit die is coupled and electrically coupled to the first ground plane by the vias within the tile.
37. A microwave integrated circuit including:
(a) a radio frequency circuit embodied an integrated circuit die on a silicon-based substrate;
(b) solder bumps positioned on the integrated circuit die; and
(c) a thin-film tile provisioned with probe-compatible connection pads and a plurality of vias within the tile, the thin-film tile being coupled to the integrated circuit die by means of the solder bumps, thereby forming a die/tile assembly;
wherein the probe-compatible connection pads are disposed on the side of the tile on which the integrated circuit die is coupled, and wherein signal connections to the integrated circuit die are made from the side of the tile opposite from the side of the tile on which the integrated circuit die is coupled.