Semiconductor device production method and semiconductor device
A semiconductor device production method includes a first step of forming a planar silicon layer on a silicon substrate and forming first and second pillar-shaped silicon layers on the planar silicon layer; a second step of forming a gate insulating film around the first and second pillar-shaped silicon layers, forming a metal film and a polysilicon film around the gate insulating film, controlling a thickness of the polysilicon film to be smaller than a half of a distance between the first and second pillar-shaped silicon layers, depositing a resist, exposing the polysilicon film on side walls of upper portions of the first and second pillar-shaped semiconductor layers, etching-away the exposed polysilicon film, stripping the third resist, and etching-away the metal film; and a third step of forming a resist for forming a gate line and performing anisotropic etching to form a gate line and first and second gate electrodes.
1. A semiconductor device comprising:
a planar semiconductor layer formed on a semiconductor substrate;
first and second pillar-shaped semiconductor layers formed on the planar semiconductor layer;
a first gate insulating film formed around the first pillar-shaped semiconductor layer;
a first gate electrode having a laminated structure constituted by a metal film and a polysilicon film formed around the first gate insulating film;
a second gate insulating film formed around the second pillar-shaped semiconductor layer;
a second gate electrode having a laminated structure constituted by a metal film and a polysilicon film formed around the second gate insulating film;
a gate line connected to the first and second gate electrodes;
an oxide film formed between the gate line and the planar semiconductor layer and having a thickness larger than that of the gate insulating film;
a first n-type diffusion layer formed in an upper portion of the first pillar-shaped semiconductor layer;
a second n-type diffusion layer formed in a lower portion of the first pillar-shaped semiconductor layer and an upper portion of the planar semiconductor layer;
a first p-type diffusion layer formed in an upper portion of the second pillar-shaped semiconductor layer; and
a second p-type diffusion layer formed in a lower portion of the second pillar-shaped semiconductor layer and an upper portion of the planar semiconductor layer,
wherein a thickness of the polysilicon film is smaller than a half of a distance between the first pillar-shaped semiconductor layer and the second pillar-shaped semiconductor layer,
a height of an upper surface of the metal film is more than a height of an upper surface of the polysilicon film, and
a height of an upper surface of the gate line is less than a height of upper surfaces of the first and second gate electrodes.
2. The semiconductor device according to claim 1 , wherein the gate line has a laminated structure constituted by the metal film and a silicide.
3. The semiconductor device according to claim 2 , wherein there is a particular offset between a center line of the gate line and a line that connects a center point of the first pillar-shaped semiconductor layer and a center point of the second pillar-shaped semiconductor layer.
4. The semiconductor device according to claim 3 , further comprising silicides formed on the first and second n-type diffusion layers and the first and second p-type diffusion layers.