Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
View Patent ↗A semiconductor manufacturing apparatus according to an embodiment comprises a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate. A first supplier supplies a source gas to a first area in the reaction chamber. A second supplier supplies an oxidation gas to a second area in the reaction chamber. A third supplier supplies a hydrogen gas to a third area between the first area and the second area in the reaction chamber. A stage moves the semiconductor substrate to any one of the first to third areas.
1. A semiconductor manufacturing apparatus, comprising:
a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate;
an oxidizable source gas inlet provided at an upper portion of the reaction chamber in a first area and supplying an oxidizable source gas to the first area in the reaction chamber;
an oxidation gas inlet provided at an upper portion of the reaction chamber in a second area and supplying an oxidation gas to the second area in the reaction chamber;
a hydrogen gas inlet provided at an upper portion of the reaction chamber in a third area, which is between the first area and the second area in the reaction chamber, and supplying a hydrogen gas to the third area to separate the first area and the second area from each other without physical partitions such that the oxidizable source gas and the oxidation gas are not mixed;
a rotating stage, which rotates around a center of the stage and on which a plurality of the semiconductor substrates are mounted, wherein rotation of the stage moves the semiconductor substrate to the first area, the third area, the second area, and the third area in this order; and
gas discharging parts respectively provided at vertical side walls of the reaction chamber in the first and second areas;
wherein:
the stage is circular;
the first to third areas are fan-shaped areas on a surface of the stage, respectively, and the first to third areas make a circle on the stage;
the second area is located on an opposite side of the center of the stage to the first area;
the stage has two third areas which are located at positions between the first area and the second area, respectively;
the oxidation gas inlet is located on an opposite side of the center of the stage to the oxidizable source gas inlet; and
two hydrogen gas inlets are provided and are located at positions between the oxidizable source gas inlet and the oxidation gas inlet in a rotation direction of the stage, respectively,
the stage moves the semiconductor substrate to one of the third areas after passing through the first area and to another of the third areas after passing through the second area while rotating in a forming process of the deposited film.
2. The apparatus of claim 1 , wherein a temperature in the reaction chamber is about 600° C. to about 800° C. and a partial pressure ratio (partial pressure of O 2 /partial pressure of H 2 ) between oxygen and hydrogen in the reaction chamber is equal to or lower than 0.25 or a partial pressure ratio (partial pressure of H 2 O/partial pressure of H 2 ) between water and hydrogen in the reaction chamber is equal to or lower than 1.0 in a forming process of the deposited film.