Granted Patent B1

US 9,842,615 · App. 14/752,659 · Granted Dec 12, 2017

Abstract

Claims (57)

1. A magnetic apparatus comprising:

an element comprising a pinning layer, a nonmagnetic insertion layer, and a pinned layer, a location of the nonmagnetic insertion layer selected from a first location between the pinned layer and the pinning layer and a second location within the pinning layer,

wherein, in the first location, a top surface of the nonmagnetic insertion layer is substantially coplanar with a top surface of the pinning layer, and wherein the nonmagnetic insertion layer adjoins the pinned layer and the pinning layer, the pinning layer being an antiferromagnetic (AFM) layer.

2. The magnetic apparatus of claim 1 wherein the element further comprises a nonmagnetic spacer layer and a free layer, the nonmagnetic spacer layer residing between the free layer and the pinned layer, the pinned layer being between the free layer and the pinning layer such that the free layer, the nonmagnetic spacer layer, the pinned layer and the pinning layer form a stack.

3. The magnetic apparatus of claim 1 wherein the nonmagnetic insertion layer comprises at least one of Ag, Mg, Mn, Ir, Pt, Cr, Ti, Si, C, Al, Ru and Au.

4. The magnetic apparatus of claim 1 wherein the nonmagnetic insertion layer has a thickness of not more than five Angstroms.

5. The magnetic apparatus of claim 4 wherein the nonmagnetic insertion layer has the thickness of not more than three Angstroms.

6. The magnetic apparatus of claim 4 wherein the nonmagnetic insertion layer has the thickness of at least one Angstrom.

7. The magnetic apparatus of claim 1 further comprising:

a bottom shield;

a top shield, the element residing between the bottom shield and the top shield; and

a side bias structure adjacent to at least one side surface of the element.

8. The magnetic apparatus of claim 1 wherein the nonmagnetic insertion layer is at the first location.

9. The magnetic apparatus of claim 8 wherein the nonmagnetic insertion layer adjoins the pinning layer and the pinned layer adjoins the nonmagnetic insertion layer.

10. The magnetic apparatus of claim 1 wherein the nonmagnetic insertion layer is configured such that a ratio of an exchange field to a coercivity for the pinned layer has a maximum at a nonzero thickness of the nonmagnetic insertion layer.

11. The magnetic apparatus of claim 1 wherein the nonmagnetic insertion layer excludes Mg and Al.

12. A magnetic apparatus comprising:

an element comprising a pinning layer, a nonmagnetic insertion layer, and a pinned layer, a location of the nonmagnetic insertion layer selected from a first location between the pinned layer and the pinning layer and a second location within the pinning layer,

wherein the nonmagnetic insertion layer is a discontinuous layer.

13. A magnetic apparatus comprising:

an element comprising a pinning layer, a nonmagnetic insertion layer, and a pinned layer, the nonmagnetic insertion layer located between the pinned layer and the pinning layer, wherein a top surface of the nonmagnetic insertion layer is substantially coplanar with a top surface of the pinning layer, and wherein the nonmagnetic insertion layer adjoins the pinned layer and the pinning layer;

wherein the element further comprises a nonmagnetic layer and a reference layer, the nonmagnetic layer residing between the reference layer and the pinned layer, the reference layer having a reference layer magnetic moment, the pinned layer having a pinned layer magnetic moment, the reference layer magnetic moment being antiferromagnetically coupled with the pinned layer magnetic moment.

14. A disk drive comprising:

at least one disk;

at least one slider including at least one magnetic transducer comprising a bottom shield, a top shield, and an element between the bottom shield and the top shield, the element comprising an antiferromagnetic (AFM) layer, a nonmagnetic insertion layer, a pinned layer, a nonmagnetic layer, and a free layer, the nonmagnetic layer being between the pinned layer and the free layer, the nonmagnetic insertion layer having a location selected from a first location between the pinned layer and the pinning layer and a second location within the pinning layer, wherein the nonmagnetic insertion layer is a discontinuous layer.

15. The disk drive of claim 14 wherein the nonmagnetic insertion layer excludes Mg and Al.

16. A method for providing a magnetic apparatus comprising:

providing an element, wherein providing the element further comprises:

providing a pinning layer;

providing a nonmagnetic insertion layer; and

providing a pinned layer on the nonmagnetic insertion layer, wherein the nonmagnetic insertion layer is located between the pinned layer and the pinning layer such that a top surface of the nonmagnetic insertion layer is substantially coplanar with a top surface of the pinning layer and, wherein the nonmagnetic insertion layer adjoins the pinned layer and the pinning layer, the pinning layer being an antiferromagnetic (AFM) layer.

17. The method of claim 16 wherein the step of providing the element further comprises:

providing a nonmagnetic spacer layer; and

providing a free layer, the nonmagnetic spacer layer residing between the free layer and the pinned layer, the pinned layer being between the free layer and the pinning layer such that the free layer, the nonmagnetic spacer layer, the pinned layer and the pinning layer form a stack.

18. The method of claim 16 wherein the nonmagnetic insertion layer comprises at least one of Ag, Mg, Mn, Ir, Pt, Cr, Ti, Si, C, Al, Ru and Au.

19. The method of claim 16 wherein the nonmagnetic insertion layer has a thickness of at least one Angstrom.

20. The method of claim 16 wherein the step of providing the nonmagnetic insertion layer comprises:

depositing the nonmagnetic insertion layer on a heated substrate.

21. The method of claim 16 wherein the step of providing the nonmagnetic insertion layer comprises:

depositing the nonmagnetic insertion layer on a cooled substrate.

22. The method of claim 16 wherein the step of providing the pinning layer comprises:

depositing the pinning layer on a heated substrate.

23. The method of claim 16 wherein the step of providing the nonmagnetic insertion layer comprises:

depositing the nonmagnetic insertion layer directly on the pinning layer; and

wherein providing the pinned layer further comprises depositing the pinned layer directly on the nonmagnetic insertion layer.

24. The method of claim 16 wherein the nonmagnetic insertion layer is configured such that a ratio of an exchange field to a coercivity for the pinned layer has a maximum at a nonzero thickness of the nonmagnetic insertion layer.

25. The method of claim 16 wherein the nonmagnetic insertion layer excludes Mg and Al.

26. A magnetic apparatus comprising:

an element comprising a pinning layer, a nonmagnetic insertion layer, and a pinned layer, wherein the nonmagnetic insertion layer is located within the pinning layer.

27. A disk drive comprising:

at least one disk;

at least one slider comprising at least one magnetic transducer comprising a bottom shield, a top shield, and an element between the bottom shield and the top shield, the element comprising an antiferromagnetic (AFM) layer, a nonmagnetic insertion layer, a pinned layer, a nonmagnetic layer, and a free layer, the nonmagnetic insertion layer having a location within the pinning layer.

28. A method for providing a magnetic apparatus comprising:

providing an element, wherein providing the element further comprises:

providing a pinning layer;

providing a nonmagnetic insertion layer within the pinning layer; and

providing a pinned layer on the pinning layer.

Assignments (9)