Red flip chip light emitting diode, package, and method of making the same
View Patent ↗Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.
1. A chip-on-board light emitting diode package comprising:
a first flip chip light emitting diode constructed to emit light in a wavelength of from about 400 to 500 nm; and
a second flip chip light emitting diode constructed to emit light in a wavelength of from about 550 to 650 nm, the second flip chip light emitting diode comprising a layer of active material attached along a first surface to a transparent carrier, wherein the carrier is different from a substrate on which the active material was grown, wherein the second flip chip is free of the substrate, wherein the active layer first surface is opposite from an active layer second surface that was attached to the substrate, wherein the carrier is selected from the group consisting of sapphire, glass, quartz, AIN, GaP and combinations thereof, and wherein the second flip chip light emitting diode comprises a pair of electrodes in direct contact with different regions of the active layer along the second surface of the active layer opposite the carrier, the first flip chip light emitting diode being positioned adjacent the second flip chip light emitting diode;
wherein the first and second flip chip light emitting diodes are each encapsulated by a phosphor material comprising a yellow constituent.
2. The chip-on-board light emitting diode package as recited in claim 1 wherein the phosphor material disposed over the first flip chip light emitting diode has a different composition of the yellow constituent than the phosphor material disposed over the second flip chip light emitting diode.
3. The chip on board light emitting diode package as recited in claim 2 wherein the phosphor material disposed over the first flip chip light emitting diode has a higher concentration of the yellow constituent than the phosphor material disposed over the second flip chip.
4. The chip-on-board light emitting diode package as recited in claim 1 wherein the first and second flip chip light emitting diodes are both encapsulated by the phosphor material having the same amount of the yellow constituent.
5. The chip-on-board light emitting diode package as recited in claim 4 wherein the concentration of the yellow constituent avoids or minimally overlaps light emitted from the second flip chip light emitting diode.
6. The chip-on-board light emitting diode package as recited in claim 1 further comprising a light transparent material disposed over the phosphor material.
7. The chip-on-board light emitting diode package as recited in claim 6 wherein the light transparent material comprises a silicone material.
8. The chip-on-board light emitting diode package as recited in claim 1 wherein the second flip chip light emitting diode carrier material is transparent to light in the wavelength of from about 550 to 650 nm, and wherein the active layer material is AlInGaP.
9. A chip-on-board light emitting diode package comprising:
a first flip chip light emitting diode constructed to emit light in a wavelength of from about 400 to 500 nm; and
a second flip chip light emitting diode constructed to emit light in a wavelength of from about 550 to 650 nm, the second flip chip light emitting element comprising an active material layer attached along one surface to a transparent carrier, wherein the carrier is different from a substrate on which the active material layer was grown and is bonded to a surface of the active layer that is opposite from an active layer surface that was attached to the substrate, the second flip chip light emitting element being free of the substrate, the active material layer comprising a pair of electrodes connected along a common surface of the active material layer opposite the carrier, wherein the electrodes are in direct connection with respective regions of the active material layer, the first flip chip light emitting diode being positioned adjacent the second flip chip light emitting diode;
wherein the first flip chip light emitting diode is encapsulated in a phosphor material comprising a yellow constituent.
10. The chip-on-board light emitting diode package as recited in claim 9 wherein the second flip chip is substantially free of a phosphor material comprising a yellow constituent.
11. The chip-on-board light emitting diode package as recited in claim 9 wherein the first and second flip chip light emitting diodes further comprise a light transparent material disposed thereover.
12. The chip-on-board light emitting diode package as recited in claim 11 wherein the light transparent material is silicone.
13. The chip-on-board light emitting diode package as recited in claim 11 wherein the light transparent material is disposed over the phosphor material and is in direct contact with the second flip chip light emitting diode.
14. The chip-on-board light emitting diode package as recited in claim 9 wherein the second flip chip light emitting diode carrier material is transparent to light in the wavelength of from about 550 to 650 nm and the active material layer is formed from AlInGaP.
15. The chip-on-board light emitting diode package as recited in claim 9 wherein the pair of electrodes is electrically isolated from one another.
16. A flip chip light emitting diode comprising:
a carrier formed from a material transparent to light having a wavelength of from about 550 to 650 nm;
an active material layer bonded to the carrier and emitting light having a wavelength of from about 550 to 650 nm, wherein the carrier is different from a substrate upon which the active material layer was grown and the carrier is bonded to a surface of the active layer opposite from the substrate, and wherein the flip chip light emitting diode is free of the substrate;
a first electrical terminal in direct contact with a first region of the active material layer; and
a second electrical terminal in direct contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer that is opposite the surface of the active material layer bonded to the carrier to facilitate electrically connecting the light emitting diode with electrical contacts positioned along an opposed surface of a connection member.
17. The flip chip light emitting diode as recited in claim 16 wherein the active material layer comprises AlInGaP.
18. The flip chip light emitting diode as recited in claim 16 wherein the first region is disposed a depth beneath the second region, and wherein the first electrical terminal is electrically isolated from the second region.
19. The flip chip light emitting diode as recited in claim 16 wherein the carrier material is selected from the group consisting of sapphire, glass, quartz, AIN, GaP and combinations thereof.
20. A chip-on-board package comprising a plurality of the flip chip light emitting diodes as recited in claim 16 , wherein the one of the first or second electrical terminals are interconnected with others of the first or second electrical terminals.
21. The chip-on-board package as recited in claim 20 further comprising a plurality of flip chips comprising an active layer material emitting light having a wavelength in the range of from about 420 to 500 nm.
22. A chip-on-board package comprising a plurality of the flip chip light emitting diodes as recited in claim 16 wherein the flip chip light emitting diodes are covered with a phosphorus material comprising a yellow constituent.
23. The chip-on-board package as recited in claim 22 further comprising a transparent material disposed over the phosphorus material.
24. A chip-on-board light emitting diode package comprising:
a first flip chip light emitting diode constructed to emit light in a wavelength of from about 400 to 500 nm; and
a second flip chip light emitting diode constructed to emit light in a wavelength of from about 550 to 650 nm, the first flip chip light emitting diode being positioned adjacent the second flip chip light emitting diode;
wherein the first and second flip chip light emitting diodes are each encapsulated by a phosphor material comprising a yellow constituent; and
wherein the phosphor material disposed over the first flip chip light emitting diode has a different composition of the yellow constituent than the phosphor material disposed over the second flip chip light emitting diode.
25. A chip-on-board light emitting diode package comprising:
a first flip chip light emitting diode constructed to emit light in a wavelength of from about 400 to 500 nm; and
a second flip chip light emitting diode constructed to emit light in a wavelength of from about 550 to 650 nm, the first flip chip light emitting diode being positioned adjacent the second flip chip light emitting diode;
wherein the first flip chip light emitting diode is encapsulated in a phosphor material comprising a yellow constituent;
wherein the first and second flip chip light emitting diodes further comprise a light transparent material disposed thereover, and wherein the light transparent material is disposed over the phosphor material and is in direct contact with the second flip chip light emitting diode.