Thermal compression bonding approaches for foil-based metallization of solar cells
View Patent ↗Thermal compression bonding approaches for foil-based metallization of solar cells, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes placing a metal foil over a metalized surface of a wafer of the solar cell. The method also includes locating the metal foil with the metalized surface of the wafer. The method also includes, subsequent to the locating, applying a force to the metal foil such that a shear force appears between the metal foil and the metallized surface of the wafer to electrically connect a substantial portion of the metal foil with the metalized surface of the wafer.
1. A method of fabricating a solar cell, the method comprising:
placing a metal foil over a metalized surface of a wafer of the solar cell;
locating the metal foil with the metalized surface of the wafer, wherein locating the metal foil with the metalized surface of the wafer comprises forming a plurality of spot welds between the metal foil with the metalized surface of the wafer by performing a tacking process, and wherein performing the tacking process comprises heating the wafer of the solar cell to a temperature approximately in the range of 350-580 degrees Celsius during the tacking process; and
subsequent to the locating, applying a force to the metal foil such that a shear force appears between the metal foil and the metallized surface of the wafer to electrically connect at least a portion of the metal foil with the metalized surface of the wafer, wherein applying the force to the metal foil comprises dragging a chuck or paddle or rolling a roller across a top surface of the metal foil.
2. The method of claim 1 , wherein performing the tacking process comprises applying a bed of nails or a porcupine roller on the metal foil to form the plurality of spot welds.
3. The method of claim 1 , wherein performing the tacking process comprises breaking through portions of one or more metal oxide layers at an interface between the metal foil and the metalized surface to form the plurality of spot welds.
4. The method of claim 1 , wherein forming the plurality of spot welds provides channels between the metal foil and the metalized surface for subsequent removal of air from between the metal foil and the metalized surface.
5. The method of claim 1 , wherein applying the force to the metal foil comprises dragging the chuck or paddle across the top surface of the metal foil.
6. The method of claim 1 , wherein applying the force to the metal foil comprises applying the force from a region of the metal foil aligned with an inner portion of the wafer of the solar cell to a region of the metal foil aligned with an outer portion of the wafer of the solar cell.
7. The method of claim 1 , wherein applying the force to the metal foil comprises heating the wafer of the solar cell to a temperature approximately in the range of 350-580 degrees Celsius during the applying the force.
8. The method of claim 1 , wherein applying the force to the metal foil comprises applying a vacuum to evacuate an interface between the metal foil and the metallized surface of the wafer during the applying the force.
9. The method of claim 1 , wherein the metal foil has a surface area larger than a surface area of the wafer of the solar cell, the method further comprising:
subsequent to electrically contacting the metal foil to the metalized surface of the wafer, cutting to the metal foil to provide the metal foil having a surface area the same as the surface area of the wafer of the solar cell.
10. The method of claim 1 , further comprising:
prior to placing the metal foil over the metalized surface of the wafer of the solar cell, cutting a large sheet of foil to provide the metal foil having a surface area the same as a surface area of the wafer of the solar cell.
11. The method of claim 1 , wherein the metalized surface of the wafer of the solar cell comprises a metal seed layer, and wherein applying the force comprises electrically contacting the metal foil to the metal seed layer.
12. A method of fabricating a solar cell, the method comprising:
placing a metal foil over a surface of a wafer of the solar cell comprising exposed alternating N-type and P-type semiconductor regions;
locating the metal foil with the exposed alternating N-type and P-type semiconductor regions of the wafer, wherein locating the metal foil with the exposed alternating N-type and P-type semiconductor regions of the wafer comprises forming a plurality of spot welds between the metal foil with the exposed alternating N-type and P-type semiconductor regions of the wafer by performing a tacking process, and wherein performing the tacking process comprises heating the wafer of the solar cell to a temperature approximately in the range of 350-580 degrees Celsius during the tacking process; and
subsequent to the locating, applying a force to the metal foil such that a shear force appears between the metal foil and the alternating N-type and P-type semiconductor regions of the wafer to electrically connect at least a portion of the metal foil with the alternating N-type and P-type semiconductor regions of the wafer, wherein applying the force to the metal foil comprises dragging a chuck or paddle or rolling a roller across a top surface of the metal foil.
13. The method of claim 12 , wherein performing the tacking process comprises applying a bed of nails or a porcupine roller on the metal foil to form the plurality of spot welds.
14. The method of claim 12 , wherein performing the tacking process comprises breaking through portions of an oxide layer at an interface between the metal foil and the exposed alternating N-type and P-type semiconductor regions to form the plurality of spot welds.
15. The method of claim 12 , wherein forming the plurality of spot welds provides channels between the metal foil and the exposed alternating N-type and P-type semiconductor regions for subsequent removal of air from between the metal foil and the exposed alternating N-type and P-type semiconductor regions.
16. A method of fabricating a solar cell, the method comprising:
placing a metal foil over a metalized surface of a wafer of the solar cell;
locating the metal foil with the metalized surface of the wafer; and
subsequent to the locating, applying a force to the metal foil such that a shear force appears between the metal foil and the metallized surface of the wafer to electrically connect at least a portion of the metal foil with the metalized surface of the wafer, wherein applying the force to the metal foil comprises dragging a chuck or paddle or rolling a roller across a top surface of the metal foil, and wherein applying the force to the metal foil comprises heating the wafer of the solar cell to a temperature approximately in the range of 350-580 degrees Celsius during the applying the force.
17. The method of claim 16 , wherein locating the metal foil with the metalized surface of the wafer comprises forming a plurality of spot welds between the metal foil with the metalized surface of the wafer by performing a tacking process.
18. The method of claim 17 , wherein performing the tacking process comprises applying a bed of nails or a porcupine roller on the metal foil to form the plurality of spot welds.
19. The method of claim 16 , wherein locating the metal foil with the metalized surface of the wafer comprises forming a plurality of spot welds between the metal foil with the metalized surface of the wafer using a laser welding process.
20. The method of claim 16 , wherein applying the force to the metal foil comprises dragging the chuck or paddle across the top surface of the metal foil.