IP Library Granted Patent US 9,520,542
Granted Patent B2
US 9,520,542 · App. 14/753,043 · Granted Dec 13, 2016

Light emitting device and method for producing same

Inventors: Yasuji Tanenaka (Osaka, JP); Masashi Takemoto (Osaka, JP); Nobuaki Aoki (Osaka, JP)
Assignee: Sharp Kabushiki Kaisha
H01L33/52H01L27/156H01L33/44H01L33/486H01L33/502H01L33/62H01L33/56H01L2224/45144H01L2224/48091H01L2224/48247H01L2224/8592
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Quick Facts
Patent No.
US 9,520,542
App. No.
14/753,043
Granted
Dec 13, 2016
Kind
B2
Abstract

There is provided a light emitting device highly resistant to the environment, and having good heat resistance, light resistance and gas barrier property, and a method for producing same. With the light emitting device, a substrate 2 and interconnect patterns 5 A, 5 B formed on the surface thereof are covered with an acrylic resin primer 10 having better gas barrier property than a silicone resin sealing resin part 3 . Light resistance is ensured by the silicone resin sealing resin portion 3 and the gas barrier property can be ensured by the acrylic resin primer 10.

Claims (17)

1. A light emitting device comprising:

a substrate;

a metal portion formed on the substrate;

an insulating layer which covers at least part of the metal portion;

an LED chip mounted on the insulating layer;

and

a sealing resin portion which covers at least part of the insulating layer to seal the LED chip,

wherein the insulating layer is made from a material which is higher in gas barrier property than the sealing resin portion, and

wherein the insulating layer covers a top surface and outer side surfaces in a lateral direction of the metal portion.

2. The light emitting device as claimed in claim 1 , wherein a top surface of the metal portion covered with the insulating layer is flat.

3. The light emitting device as claimed in claim 2 , wherein a top surface of the insulating layer is flat, the top surface of the metal portion being covered with the insulating layer.

4. The light emitting device as claim in claim 1 , further comprising: an interconnect pattern which is provided on the insulating layer and which is electrically connected to the LED chip.

5. The light emitting device as claimed in claim 1 , wherein the metal portion is narrower in a lateral direction than the substrate so that there are distances in the lateral direction between side surfaces of the metal portion and side surfaces of the substrate.

6. The light emitting device as claimed in claim 1 , wherein the sealing resin portion is in close contact with a surface of at least part of the insulating layer.

7. The light emitting device as claimed in claim 1 , wherein the sealing resin portion contains a fluorophor.

8. A back light source for general lighting use or TV use including the light emitting device as claimed in claim 1 .

9. The light emitting device as claimed in claim 1 , wherein the insulating layer lies between the metal portion and the LED chip.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 26, 2018
From: SHARP KABUSHIKI KAISHA
To: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
Reel/Frame 047331/0728 →
Priority Claims (1)
JP 2008-165897 · Jun 25, 2008 · national
Continuity (3)
Division 13958653 · Aug 5, 2013
Continuation 13001355
Related Publication 20150303357A1 · Oct 22, 2015