Semiconductor device and method of manufacturing the same
View Patent ↗In one embodiment, a semiconductor device includes a substrate. The device further includes a first interconnect which includes a first layer provided on the substrate and formed of a first interconnect material, and a second layer provided on the first layer, formed of a second interconnect material different from the first interconnect material, and having a first lower face, and has a first width. The device further includes a second interconnect which includes a third layer provided on the substrate and formed of the first interconnect material, a fourth layer provided on the third layer, formed of the second interconnect material, and having a second lower face lower than the first lower face, and has a second width greater than the first width.
1. A semiconductor device comprising:
a substrate;
a first interconnect which includes a first layer provided on the substrate and formed of a first interconnect material, and a second layer provided on the first layer, formed of a second interconnect material different from the first interconnect material, and having a first lower face, and has a first width; and
a second interconnect which includes a third layer provided on the substrate and formed of the first interconnect material, a fourth layer provided on the third layer, formed of the second interconnect material, and having a second lower face lower than the first lower face, and has a second width greater than the first width,
wherein
the first layer includes a first metal layer and a second metal layer provided on the first metal layer, the first metal layer being provided on a lower face of the second metal layer,
the second layer includes a third metal layer and a fourth metal layer provided on the third metal layer, the third metal layer being provided on a lower face and a side face of the fourth metal layer,
the third layer includes a fifth metal layer and a sixth metal layer provided on the fifth metal layer, the fifth metal layer being provided on a lower face of the sixth metal layer,
the fourth layer includes a seventh metal layer and an eighth metal layer provided on the seventh metal layer, the seventh metal layer being provided on a lower face and a side face of the eighth metal layer.
2. The device of claim 1 , wherein
a thickness of the third layer is smaller than a thickness of the first layer, and
a thickness of the fourth layer is larger than a thickness of the second layer.
3. The device of claim 1 , wherein the first interconnect material contains tungsten, aluminum or molybdenum.
4. The device of claim 1 , wherein the second interconnect material contains copper.
5. The device of claim 1 , further comprising a first insulator provided on the first interconnect, wherein an air gap is provided adjacent to the first interconnect under the first insulator.
6. The device of claim 5 , wherein the air gap has a lower end lower than a lower face of the first layer.
7. The device of claim 5 , wherein the air gap has an upper end higher than an upper face of the second layer.
8. The device of claim 1 , further comprising a fifth layer provided on the first interconnect, formed of a second insulator, and having the first width, and a sixth layer provided on the second interconnect, formed of the second insulator, and having the second width.
9. The device of claim 1 , wherein
the first interconnect is provided in a memory cell region on the substrate, and
the second interconnect is provided in a peripheral circuit region on the substrate.
10. The device of claim 1 , wherein
the first layer is a RIE (reactive ion etching) interconnect that configures the first interconnect,
the second layer is a damascene interconnect that configures the first interconnect,
the third layer is a RIE (reactive ion etching) interconnect that configures the second interconnect,
the fourth layer is a damascene interconnect that configures the second interconnect.