Semiconductor device and method for making semiconductor device
A semiconductor device includes: a substrate including a base member having a main surface and a back surface facing opposite in a thickness direction; a semiconductor element mounted on the main surface of the substrate and having at least one element pad; a wire having a bonding portion bonded to the element pad; and a sealing resin formed on the main surface of the substrate for covering the wire and at least a portion of the semiconductor element. The semiconductor element has an element exposed side surface that faces in a direction crossing the thickness direction of the substrate and is exposed from the sealing resin.
1. A semiconductor device comprising:
a substrate including a base member having a main surface and a back surface facing opposite in a thickness direction;
a first, a second and a third sensor elements each having at least one element pad and mounted on the main surface of the substrate;
a control element that processes outputs from the first, the second and the third sensor elements; and
a sealing resin formed on the main surface of the substrate, and covering the control element and at least a portion of each of the sensor elements,
wherein the first sensor element includes an element side surface that faces in a direction crossing the thickness direction of the substrate,
the second sensor element and the third sensor element are mounted on the control element so as to be spaced apart from the substrate,
the first sensor element has a first main portion and a second main portion,
the second main portion has a bonding surface on which the element pad of the first sensor element is formed, and
the element pad of the first sensor element becomes thinner as proceeding toward the first main portion.
2. The semiconductor device according to claim 1 , wherein the base member includes a substrate outer side surface that connects the main surface and the back surface to each other and is flush with the element side surface.
3. The semiconductor device according to claim 2 , wherein the sealing resin has a sealing resin outer surface flush with both the element side surface and the substrate outer side surface of the base member.
4. The semiconductor device according to claim 1 , wherein the element side surface is perpendicular to the thickness direction of the substrate.
5. The semiconductor device according to claim 1 , wherein the element side surface is formed on the first main portion.
6. The semiconductor device according to claim 5 , wherein the first main portion is formed of a semiconductor.
7. The semiconductor device according to claim 1 , wherein the second main portion is formed of an insulating material.
8. The semiconductor device according to claim 7 , wherein the second main portion is formed of a resin.
9. The semiconductor device according to claim 1 , wherein the first main portion and the second main portion are arranged side by side in a direction in which the element side surface faces.
10. The semiconductor device according to claim 9 , wherein a dimension of the first main portion in the thickness direction of the substrate is greater than a dimension of the first main portion in a direction in which the element side surface faces.
11. The semiconductor device according to claim 9 , wherein a dimension of the second main portion in the thickness direction of the substrate is greater than a dimension of the second main portion in a direction in which the element side surface faces.
12. The semiconductor device according to claim 10 , wherein a dimension of the first sensor element in the thickness direction of the substrate is greater than a dimension of the semiconductor element in a direction in which the element side surface faces.
13. The semiconductor device according to claim 1 , wherein the first sensor element is bonded to the substrate by a bonding member.
14. The semiconductor device according to claim 13 , wherein the bonding member is an insulating bonding member.
15. The semiconductor device according to claim 13 , wherein the bonding member is a conductive bonding member.
16. The semiconductor device according to claim 13 , wherein the bonding member has a bonding member exposed side surface flush with the element side surface.
17. The semiconductor device according to claim 1 , wherein the first sensor element is a direction sensor element including a detection reference axis in the first main portion.
18. The semiconductor device according to claim 17 , wherein the detection reference axis is parallel to the thickness direction of the substrate.
19. The semiconductor device according to claim 1 , wherein the element side surface is exposed from the sealing resin.