Memory controller, memory control method, and coefficient decision method

1. A memory controller comprising:

circuitry configured to

acquire a distribution of threshold voltages of a plurality of memory cells from a nonvolatile memory, the nonvolatile memory including the plurality of memory cells;

compare a characteristic value and a condition, and identify a malfunction state occurring in the nonvolatile memory based on a result of the comparison, the characteristic value indicating a shape characteristic of the distribution, the condition defining a range of an obtainable characteristic value in plural types of the malfunction states; and

set a read voltage when data is read out of the nonvolatile memory to a voltage value corresponding to a type of the malfunction state.

2. The memory controller according to claim 1 , wherein the circuitry is further configured to

detect a valley portion from the shape of the distribution, and

correct a voltage value of the valley portion based on a correction amount corresponding to the type of the malfunction state, and

set the read voltage to the voltage value corrected by the correction amount.

3. The memory controller according to claim 1 , wherein the circuitry is further configured to

perform a predetermined coefficient calculating process on a data series of the distribution to acquire the characteristic value indicating a characteristic of the data series, and

compare the characteristic value acquired in the coefficient calculating process and the condition.

4. The memory controller according to claim 3 , wherein the circuitry performs the coefficient calculating process on the data series based on a coefficient which is defined to characterize a characteristic of the malfunction state of an identification target.

5. The memory controller according to claim 3 , wherein the circuitry extracts data in a section from the data series of the distribution, and performs the coefficient calculating process on the extracted data, the section indicating a characteristic of the malfunction state of an identification target.

6. The memory controller according to claim 1 , wherein the circuitry is further configured to perform error correction of the data which is read out of the nonvolatile memory, and

acquire the distribution in a case where the error correction is failed.

7. A memory control method comprising:

acquiring a distribution of threshold voltages of a plurality of memory cells from a nonvolatile memory, the nonvolatile memory including the plurality of memory cells;

comparing a characteristic value and a condition, and identifying a malfunction state occurring in the nonvolatile memory based on a result of the comparing, the characteristic value indicating a shape characteristic of the distribution, the condition defining a range of an obtainable characteristic value in plural types of malfunction states; and

setting a read voltage when data is read out of the nonvolatile memory to a voltage value corresponding to a type of the malfunction state.

8. The memory control method according to claim 7 , further comprising:

detecting a valley portion from the shape of the distribution; and

correcting a voltage value of the valley portion based on a correction amount corresponding to the type of the malfunction state,

wherein the read voltage is set to a voltage value corrected by the correction amount.

9. The memory control method according to claim 7 , further comprising:

performing a predetermined coefficient calculating process on a data series of the distribution to acquire the characteristic value indicating a characteristic of the data series,

wherein the characteristic value acquired in the coefficient calculating process is compared with the condition.

10. The memory control method according to claim 9 ,

wherein the coefficient calculating process is performed on the data series based on a coefficient which is defined to characterize a characteristic of the malfunction state of an identification target.

11. The memory control method according to claim 9 , further comprising:

extracting data in a section from the data series of the distribution, the section indicating a characteristic of the malfunction state of an identification target,

wherein the coefficient calculating process is performed on the extracted data.

12. The memory control method according to claim 7 , further comprising:

performing error correction of the data which is read out of the nonvolatile memory,

wherein the distribution is acquired in a case where the error correction is failed.

13. A memory controller comprising:

a distribution acquisition unit configured to acquire a distribution of threshold voltages of a plurality of memory cells from a nonvolatile memory, the nonvolatile memory including the plurality of memory cells;

an identification unit configured to compare a characteristic value and a condition, and identify a malfunction state occurring in the nonvolatile memory based on a result of the comparison, the characteristic value indicating a shape characteristic of the distribution, the condition defining a range of an obtainable characteristic value in plural types of the malfunction states; and

a setting unit configured to set a read voltage when data is read out of the nonvolatile memory to a voltage value corresponding to a type of the malfunction state.