System on chip (SoC) based on phase transition and/or phase change material
View Patent ↗System on chips (SoCs) of a microprocessor electrically connected with electronic memory devices and/or optically connected with a optical memory device are disclosed along with various embodiments of building block of the microprocessor and the electronic memory devices, wherein the microprocessor can comprise digital unit and/or neural networks based unit.
1. A system on chip comprising: a microprocessor, wherein the microprocessor is optically connected with an optical memory device, wherein the optical memory device comprises: a phase change material, wherein the microprocessor is further optically connected with the optical memory device by an optical device, an optical to electronic converter device and an optical waveguide, wherein the optical device comprises: a light source of one or more wavelengths, or light sources of one or more wavelengths, wherein the optical device is configurated to provide one or more wavelengths of controlled optical intensities.
2. The phase change material according to claim 1 , further comprises: germanium-antimony-tellurium (GeSbTe).
3. The system on chip according to claim 1 , further comprises the optical memory device, wherein the optical memory device is activated by a first wavelength of a first intensity for writing, wherein the optical memory device is activated by a second wavelength of a second intensity for erasing, wherein the optical memory device is activated by a third wavelength of a third intensity for reading.
4. The system on chip according to claim 1 , further comprises: an electronic memory device.
5. The electronic memory device according to claim 4 , further comprises: a phase transition material.
6. The electronic memory device according to claim 5 , further comprises: a phase transition material, which is fabricated to a size less than 1000 nanometers.
7. A system on chip comprising: a microprocessor, wherein the microprocessor is optically connected with an optical memory device, wherein the microprocessor comprises: hybrid carbon nanotube and phase transition based field effect transistors,
wherein the microprocessor is further optically connected with the optical memory device by an optical device, an optical to electronic converter device and an optical waveguide,
wherein the optical device comprises: a light source of one or more wavelengths, or light sources of one or more wavelengths,
wherein the optical device is configurated to provide one or more wavelengths of controlled optical intensities,
wherein the carbon nanotube is metallurgically connected/welded to a source metal or a drain metal.
8. The optical memory device according to claim 7 , further comprises: a phase change material.
9. The optical memory device according to claim 8 , further comprises: germanium-antimony-tellurium (GeSbTe).
10. The system on chip according to claim 7 , further comprises: the optical memory device, wherein the optical memory device is activated by a first wavelength of a first intensity for writing, wherein the optical memory device is activated by a second wavelength of a second intensity for erasing, wherein the optical memory device is activated by a third wavelength of a third intensity for reading.
11. The system on chip according to claim 7 , further comprises: an electronic memory device.
12. The electronic memory device according to claim 11 , further comprises: a phase transition material.
13. The electronic memory device according to claim 12 , further comprises: a phase transition material, which is fabricated to a size less than 1000 nanometers.
14. A system on chip comprising: a microprocessor, wherein the microprocessor is optically connected with an optical memory device, wherein the microprocessor comprises: carbon nanotube based field effect transistors or phase transition based field effect transistors,
wherein the microprocessor is further optically connected with the optical memory device by an optical device, an optical to electronic converter device and an optical waveguide,
wherein the optical device comprises: a light source of one or more wavelengths, or light sources of one or more wavelengths,
wherein the optical device is configurated to provide one or more wavelengths of controlled optical intensities,
wherein the carbon nanotube is metallurgically connected/welded to a source metal or a drain metal.
15. The optical memory device according to claim 14 , further comprises: a phase change material.
16. The optical memory device according to claim 15 , further comprises: germanium-antimony-tellurium (GeSbTe).
17. The system on chip according to claim 14 , further comprises: the optical memory device, wherein the optical memory device is activated by a first wavelength of a first intensity for writing, wherein the optical memory device is activated by a second wavelength of a second intensity for erasing, wherein the optical memory device is activated by a third wavelength of a third intensity for reading.
18. The system on chip according to claim 14 , further comprises: an electronic memory device.
19. The electronic memory device according to claim 18 , further comprises: a phase transition material.
20. The electronic memory device according to claim 19 , further comprises: a phase transition material, which is fabricated to a size less than 1000 nanometers.