Light-emitting device
This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting diode, a metal bump, and a reflective insulation layer. The light-emitting diode includes an active layer, an insulation layer formed on the active layer and having a side surface, and a pad electrically connected to the active layer. The metal bump is formed on the pad. The reflective insulation layer covers the side surface.
1. A light-emitting device comprising:
a light-emitting diode comprising:
an active layer;
a pad electrically connected to the active layer and having a first side surface;
a metal bump formed on the pad and having a second side surface; and
a reflective insulation layer directly contacting the second side surface without covering the first side surface.
2. The light-emitting device of claim 1 , further comprising a wavelength conversion layer formed on the reflective insulation layer and the light-emitting diode.
3. The light-emitting device of claim 2 , wherein the wavelength conversion layer has a top surface and a bottom surface, and has a wavelength conversion particle concentration gradually decreasing from the top surface to the bottom surface.
4. The light-emitting device of claim 1 , further comprising a plurality of scratched lines formed on the metal bump and exposed in a bottom view of the light-emitting device.
5. The light-emitting device of claim 1 , wherein the light-emitting diode further comprises a semiconductor layer with a side surface covered by the reflective insulation layer.
6. The light-emitting device of claim 1 , further comprising a wavelength conversion layer, wherein the light-emitting diode further comprises a substrate with a side surface covered by the wavelength conversion layer.
7. The light-emitting device of claim 1 , further comprising a plurality of scratched lines formed on the reflective insulation layer.
8. The light-emitting device of claim 1 , wherein the metal bump has a vertical side surface.
9. The light-emitting device of claim 1 , wherein the metal bump is formed to outwardly extend beyond a surface of the reflective insulation layer.
10. The light-emitting device of claim 1 , wherein the reflective insulation layer comprises a matrix with a refractive index of 1.5˜1.6.
11. The light-emitting device of claim 2 , wherein the wavelength conversion layer has a sidewall is substantially coplanar with the reflective insulation layer.
12. The light-emitting device of claim 1 , wherein the first side surface is covered by the metal bump.
13. The light-emitting device of claim 1 , further comprising a wavelength conversion layer, wherein the light-emitting diode further comprises an insulation layer formed on the active layer and having a side surface covered by the wavelength conversion layer.
14. The light-emitting device of claim 1 , wherein the reflective insulation layer and the metal bump have bottom surfaces substantially coplanar with each other.
15. The light-emitting device of claim 1 , further comprising a wavelength conversion layer, wherein the light-emitting diode further comprises a semiconductor layer with a side surface covered by the wavelength conversion layer.
16. The light-emitting device of claim 1 , wherein the light-emitting diode further comprises an insulation layer on which the reflective insulation layer is formed.
17. The light-emitting device of claim 1 , further comprising a wavelength conversion layer covering the light-emitting diode and having a side wall covered by the reflective insulation layer.
18. The light-emitting device of claim 17 , wherein the wavelength conversion layer and the reflective insulation layer have top surfaces substantially coplanar with each other.