INDIUM-DOPED SILICON WAFER AND SOLAR CELL USING THE SAME
A solar cell is provided, the solar cell fabricated from an indium-doped monocrystalline silicon wafer sliced from an ingot grown by the Czochralski method. The solar cell is characterized by high efficiency and low light induced degradation.
1 . A solar cell comprising:
an indium-doped monocrystalline silicon wafer sliced from an ingot grown by the Czochralski method, wherein the efficiency of converting solar spectral irradiance on a surface of the indium-doped monocrystalline silicon wafer under an absolute air mass of 1.5 is at least 17%.
2 . The solar cell of claim 1 wherein the efficiency of converting solar spectral irradiance on a surface of the indium-doped monocrystalline silicon wafer under an absolute air mass of 1.5 is at least 18%.
3 . The solar cell of claim 1 wherein the efficiency of converting solar spectral irradiance on a surface of the indium-doped monocrystalline silicon wafer under an absolute air mass of 1.5 is at least 19%.
4 . The solar cell of claim 1 wherein the efficiency of converting solar spectral irradiance on a surface of the indium-doped monocrystalline silicon wafer under an absolute air mass of 1.5 is at least 19.5%.
5 . The solar cell of claim 1 wherein the efficiency of converting solar spectral irradiance on a surface of the indium-doped monocrystalline silicon wafer under an absolute air mass of 1.5 is at least 20%.
6 - 12 . (canceled)
13 . The solar cell of claim 1 wherein the indium-doped monocrystalline silicon wafer has an average bulk resistivity less than about 10 ohm-cm.
14 . The solar cell of claim 1 wherein the indium-doped monocrystalline silicon wafer has an average bulk resistivity less than about 5 ohm-cm.
15 . (canceled)
16 . The solar cell of claim 1 wherein the indium-doped monocrystalline silicon wafer has an average bulk resistivity less than about 3 ohm-cm.
17 . The solar cell of claim 1 wherein the indium-doped monocrystalline silicon wafer has an average bulk resistivity less than about 1 ohm-cm.
18 . (canceled)
19 . The solar cell of claim 1 wherein the relative efficiency of the solar cell degrades by no more than about 2% after 1 hour to 300 hours exposure to light equivalent to 0.1 suns to 10 suns at a temperature less than 45° C.
20 . The solar cell of claim 1 wherein the relative efficiency of the solar cell degrades by no more than about 1% after 1 hour to 300 hours exposure to light equivalent to 0.1 suns to 10 suns at a temperature less than 45° C.
21 . The solar cell of claim 1 wherein the relative efficiency of the solar cell degrades by no more than about 2% after 24 hours exposure to light equivalent to 0.7 suns at a temperature less than 45° C.
22 . (canceled)
23 . The solar cell of claim 1 wherein the absolute efficiency of the solar cell degrades by no more than about 0.5% after 1 hour to 300 hours exposure to light equivalent to 0.1 suns to 10 suns at a temperature less than 45° C.
24 . The solar cell of claim 1 wherein the absolute efficiency of the solar cell degrades by no more than about 0.2% after 1 hour to 300 hours exposure to light equivalent to 0.1 suns to 10 suns at a temperature less than 45° C.
25 - 29 . (canceled)
30 . A solar cell comprising:
an indium-doped monocrystalline silicon wafer sliced from an ingot grown by the Czochralski method, wherein the wafer has an average bulk resistivity less than about 10 ohm-cm and wherein the relative efficiency of the solar cell degrades by no more than about 1% after 1 hour to 300 hours exposure to light equivalent to 0.1 suns to 10 suns at a temperature less than 45° C.
31 . The solar cell of claim 30 wherein the indium-doped monocrystalline silicon wafer has an average bulk resistivity less than about 5 ohm-cm.
32 - 33 . (canceled)
34 . The solar cell of claim 30 wherein the indium-doped monocrystalline silicon wafer has an average bulk resistivity less than about 1 ohm-cm.
35 . (canceled)
36 . The solar cell of claim 30 wherein the absolute efficiency of the solar cell degrades by no more than about 0.5% after 1 hour to 300 hours exposure to light equivalent to 0.1 suns to 10 suns at a temperature less than 45° C.
37 . The solar cell of claim 30 wherein the absolute efficiency of the solar cell degrades by no more than about 0.2% after 1 hour to 300 hours exposure to light equivalent to 0.1 suns to 10 suns at a temperature less than 45° C.
38 - 42 . (canceled)
43 . A solar cell comprising:
an indium-doped monocrystalline silicon wafer sliced from an ingot grown by the Czochralski method, wherein the wafer has an average bulk resistivity less than about 10 ohm-cm and wherein the relative efficiency of the solar cell degrades by no more than about 1% after at least 4 hours exposure to sunlight at a temperature less than 45° C.
44 - 56 . (canceled)