Broad-band filter in branching technology

1. A reactance filter using branching technology, the reactance filter comprising:

a series circuit containing a first filter element, a second filter element and a third filter element,

wherein each filter element comprises a first impedance element that is connected in series with an impedance element of an adjacent filter element,

wherein the first impedance element of each filter element comprises a resonator,

wherein each first impedance element has a bandwidth that is expressed by its pole zero distance,

wherein each filter element comprises a means for setting a bandwidth of at least one impedance element thereof, the bandwidth of at least one of the first impedance elements in at least one of the filter elements being set to a different value than the bandwidth of at least one of the first impedance elements in another of the filter elements, and

wherein the impedance elements of the second filter element have a lower bandwidth than those of the third filter element.

2. The reactance filter according to claim 1 , wherein one or more of the filter elements comprises the resonator and a series coil.

3. The reactance filter according to claim 1 , wherein one or more of the filter elements comprises the resonator and a parallel capacitance circuited in parallel to the resonator.

4. The reactance filter according to claim 1 , wherein the bandwidths of all the impedance elements of the second filter element are set to be larger or narrower than the bandwidths of the impedance elements of the first element.

5. The reactance filter according to claim 1 , wherein the resonators are acoustic wave resonators.

6. The reactance filter according to claim 5 , wherein the acoustic wave resonators are selected from the group consisting of SAW (surface acoustic wave) resonators, BAW (bulk acoustic wave) resonators and GBAW (guided bulk acoustic wave) resonators.

7. The reactance filter according to claim 5 , wherein the means for setting the bandwidth comprises a dielectric layer arranged above at least one of the acoustic wave resonators of the filter elements, wherein a layer thickness of the dielectric layer above the second filter element is set to a value different than a layer thickness of the dielectric layer above the first and third filter elements, and wherein the smaller layer thickness can have a value zero.

8. The reactance filter according to claim 7 , wherein the dielectric layer in one of the filter elements sets a lower bandwidth for the impedance elements by having a greater stiffness at that location than a piezoelectric substrate of the resonators and a greater thickness than above another filter element.

9. The reactance filter according to claim 7 , wherein the dielectric layer is an SiO 2 layer arranged above the resonators of at least one filter element.

10. The reactance filter according to claim 9 , further comprising a SiN passivation layer arranged above the SiO 2 layer.

11. The reactance filter according to claim 1 , wherein the means for setting the bandwidth comprises a coil connected in series with a resonator in some of the filter elements.

12. The reactance filter according to claim 1 , wherein the filter elements are formed on two substrates having different electromechanical coupling, wherein to set a higher bandwidth for the impedance elements in a filter element the substrate having the higher coupling is selected for the corresponding filter element.

13. The reactance filter according to claim 1 , wherein the means for setting the bandwidth comprises a capacitance connected in parallel with a resonator in some of the filter elements.

14. The reactance filter according to claim 1 , wherein a number of resonators in the first and third filter elements is the same, and wherein a connection sequence for the resonators of the whole filter is symmetric.

15. A reactance filter using branching technology, the reactance filter comprising:

a series circuit containing a first filter element, a second filter element and a third filter element,

wherein each filter element comprises a first impedance element that is connected in series with an impedance element of an adjacent filter element,

wherein each filter element comprises a second impedance element connected to the first impedance element of that filter,

wherein the first and/or second impedance element of each filter element comprises a resonator,

wherein each impedance element has a bandwidth that is expressed by its pole zero distance, and

wherein the bandwidth of one of the impedance elements in at least one of the filter elements is set to a different value than the bandwidth of at least one of the first or second impedance elements in another of the filter elements, and

wherein the impedance elements of the second filter element have a lower bandwidth than those of the third filter element.

16. A reactance filter using branching technology, the reactance filter comprising:

a series circuit containing a first filter element, a second filter element and a third filter element,

wherein each filter element comprises a first impedance element that is connected in series with an impedance element of an adjacent filter element,

wherein the first impedance element of each filter element comprises a resonator,

wherein each first impedance element has a bandwidth that is expressed by its pole zero distance,

wherein each filter element comprises a means for setting a bandwidth of at least one impedance element thereof, the bandwidth of at least one of the first impedance elements in at least one of the filter elements being set to a different value than the bandwidth of at least one of the first impedance element in another of the filter elements,

wherein the resonators are acoustic wave resonators,

wherein the first and third filter elements are disposed on a first chip,

wherein the second filter element is disposed on a second chip,

wherein the bandwidth of the impedance elements on the first and second chips is set differently,

wherein the first and second chips are arranged on a common circuit carrier,

wherein the filter elements are connected in series via electrical conductor sections of the circuit carrier, and

wherein the first and second chips are packaged together.

17. The reactance filter according to claim 16 , wherein the first and second chips differ in at least two parameters, and wherein the parameters are selected from the group consisting of a substrate material, a cutting angle of a piezoelectric material, a material of a dielectric layer and a layer thickness of the dielectric layer that is applied above the filter elements.

18. A reactance filter using branching technology, the reactance filter comprising:

a series circuit containing a first filter element, a second filter element and a third filter element,

wherein each filter element comprises a first impedance element that is connected in series with an impedance element of an adjacent filter element,

wherein the first impedance element of each filter element comprises a resonator,

wherein each first impedance element has a bandwidth that is expressed by its pole zero distance,

wherein each filter element comprises a means for setting a bandwidth of at least one impedance element thereof, the bandwidths of at least one of the first impedance elements in at least one of the filter elements being set to a different value than the bandwidth of at least one of the first impedance element in another of the filter elements,

wherein the resonators of the filter element(s) having a lower bandwidth comprise BAW (bulk acoustic wave) resonators,

wherein the resonators of the filter elements having a higher bandwidth comprise SAW (surface acoustic wave) resonators, and

wherein the filter elements are arranged on two different chips.