Assessing alignment of top and bottom ends of TSVs and characterizing microfabrication process

1. A method of assessing a quality level of a through silicon via (TSV) formed in a substrate defining an obverse side opposite a reverse side, the method comprising:

obtaining geometric information about a top end of a TSV from the obverse side of the substrate;

obtaining geometric information about a bottom end of the TSV from the reverse side of the substrate;

wherein the steps of obtaining geometric information about a top end and obtaining geometric information about a bottom end are performed simultaneously by an automated inspection system:

aligning the geometric information of the top and bottom ends of the TSV to determine an alignment of the respective top and bottom ends of the TSV.

2. The method of assessing a quality level of a through silicon via (TSV) of claim 1 further comprising obtaining a thickness value of the substrate substantially at an XY position of the TSV and inferring a geometric volume of the TSV based at least on the geometric information of the respective top and bottom ends of the TSV and determining whether the inferred geometric volume of the TSV is similar to a predetermined criteria.

3. A method of characterizing a microfabrication process and a product formed by the microfabrication process comprising:

determining a location of a plurality of TSV's from an obverse side of a substrate;

determining a location of the same plurality of TSV's from a reverse side of the substrate, the reverse side being opposite the obverse side;

wherein the steps of determining a location of a plurality TSV's from an observe side and a reverse side are performed simultaneously by an automated inspection system;

determining the presence of a misalignment between the position of a TSV from the obverse and reverse sides of the substrate; and,

identifying, a process excursion in a microfabrication process based upon the determined presence of a misalignment.

4. The method of characterizing a microfabrication process and a product formed by the microfabrication process of claim 3 further comprising:

determining a geometry of the plurality of TSV's from both the obverse and reverse sides of the substrate; and,

determining whether the geometry of the respective TSV's from the respective obverse and reverse sides of the substrate varies by more than a predetermined criteria selected from a group consisting of size and geometry.

5. The method of characterizing a microfabrication process and a product formed by the microfabrication process of claim 3 further comprising:

fitting the location of the plurality of TSV's as determined from the obverse side of the substrate to the location of the plurality of TSV's as determined from the reverse side of the substrate; and,

quantifying the degree of misalignment between the fitted locations of the TSV's, if any.

6. The method of characterizing a microfabrication process and a product formed by the microfabrication process of claim 3 wherein determining a location of a plurality TSV's from an obverse side of a substrate is conducted prior to the filling of the TSV with a conductive material (metallization).

7. The method of characterizing a microfabrication process and a product formed by the microfabrication process of claim 3 wherein determining a location of the same plurality of TSV's from a reverse side of a substrate is carried out after the substrate has been thinned from a nominal thickness.

8. A method of characterizing a microfabrication process and a product formed by the microfabrication process comprising:

determining a location of a plurality of TSV's from an obverse side of a substrate;

determining a location of a bottom end of the same plurality of TSV's within the substrate;

wherein the steps of determining a location of a plurality of TSV's and a location of a bottom end of the same plurality of TSV's are performed simultaneously by an automated inspection system;

determining the presence of a misalignment between the position of a TSV from the obverse side of the substrate and the position of the bottom end of the TSV within the substrate and,

identifying a process excursion in a microfabrication process based upon the determined presence of a misalignment.

9. The method of characterizing a microfabrication process and a product formed by the microfabrication process of claim 8 further comprising the use of radiation in the near infrared range of wavelengths to obtain a position of the bottom end of the TSV's.