Component comprising stacked functional structures and method for producing same

1. A component comprising:

a first structure, a first thin-film cover and a second structure;

wherein the first thin-film cover covers the first structure without touching the first structure,

wherein the second structure is arranged directly on or above the first thin-film cover, and

wherein at least one of the first and second structures comprises a MEMS structure.

2. The component according to claim 1 , wherein the first structure and the second structure are each selected from: an SAW structure, a BAW structure, and a GBAW structure.

3. The component according to claim 1 , wherein the first structure and the second structure substantially have the same construction or are of the same type, and are arranged either with an identical orientation with respect to one another one directly above the other or with a lateral offset one above the other.

4. The component according to claim 1 , wherein the first and second structures are constructed symmetrically with respect to a mirror plane between the first and second structures and are arranged one directly above the other or with a lateral offset one above the other.

5. The component according to claim 1 , wherein the first structure is arranged in a cavity between a carrier substrate and the first thin-film cover.

6. The component according to claim 1 , wherein a planarization layer having a planar surface is arranged on the first thin-film cover.

7. The component according to claim 1 ,

wherein the first structure and the second structure in each case comprise an acoustically active region, and

wherein the acoustically active region of the first structure is acoustically decoupled with the acoustically active region of the second structure.

8. The component according to claim 1 , further comprising:

a plated-through hole through the first thin-film cover;

wherein the first structure and the second structure in each case comprise an electrically conductive electrode, and

wherein the electrically conductive electrode of the first and second structures are interconnected via the plated-through hole.

9. The component according to claim 1 , wherein the first structure and the second structure are interconnected and are together at least parts of a balun or duplexer circuit.

10. The component according to claim 1 , further comprising a circuit element which is arranged between the first structure and the second structure and is interconnected at least with the first structure or the second structure.

11. The component according to claim 10 , wherein the circuit element is a capacitive or inductive element.

12. The component according to claim 1 , wherein the first thin-film cover comprises at least one layer produced by a thin film package technology and comprises a material selected from the group consisting of silicon, silicon nitride, aluminum nitride, aluminum oxide, a metal, and a polymer.

13. A method for producing a component, the method comprising:

providing a first carrier;

producing a first structure on the first carrier;

producing a first thin-film cover above the first structure, wherein the first thin-film cover covers the first structure without touching it, wherein the first structure is fully enclosed by the first carrier and the first thin-film cover; and

producing a second structure directly on or above the first thin-film cover, wherein at least one of the first and second structures comprises a MEMS structure.

14. The method according to claim 13 , wherein the first structure and the second structure are each selected from: an SAW structure, a BAW structure, and a GBAW structure.

15. The method according to claim 13 , wherein the first structure and the second structure comprise an acoustic device.

16. The method according to claim 13 , wherein the first structure and the second structure are interconnected and are together at least parts of a balun or duplexer circuit.

17. The method for producing a component according to claim 13 , further comprising:

applying a first sacrificial layer on the first structure;

depositing the first thin-film cover on the first sacrificial layer; and

removing the first sacrificial layer after the deposition of the first thin-film cover.

18. The method according to claim 13 , wherein producing the first thin-film cover comprises producing at least one layer using a thin film package technology, and wherein the thin-film cover comprises a material selected from the group consisting of silicon, silicon nitride, aluminum nitride, aluminum oxide, a metal, and a polymer.

19. The method according to claim 13 , further comprising arranging a capacitive or inductive circuit element between the first structure and the second structure and interconnecting the circuit element at least with the first structure or the second structure.

20. A method for producing a component, the method comprising:

producing a first and a second component part and joining together both component parts;

wherein producing the first component part comprises:

providing a first carrier,

producing a first structure on the first carrier,

producing a first thin-film cover above the first structure, wherein the first thin-film cover covers the first structure without touching it, and

wherein producing the second component part comprises:

providing a second carrier, and

producing a second structure on the second carrier, wherein at least one of the first and second structures comprises a MEMS structure.