IP Library Granted Patent US 10,100,393
Granted Patent B2
US 10,100,393 · App. 14/768,613 · Granted Oct 16, 2018

Laser patterning of multi-layer structures

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Quick Facts
Patent No.
US 10,100,393
App. No.
14/768,613
Granted
Oct 16, 2018
Kind
B2
Abstract

A method of non-ablatively laser patterning a multi-layer structure, the multi-layer structure including a substrate, a first layer disposed on the substrate, a second layer disposed on the first layer, and a third layer disposed on the second layer, the method including generating at least one laser pulse having laser parameters selected for non-ablatively changing the conductivity a selected portion of the third layer such that the selected portion becomes non-conductive, and directing the pulse to the multi-layer structure, wherein the conductivity of the first layer is not substantially changed by the pulse.

Claims (27)

1. A method of laser patterning a multi-layer structure, comprising:

providing a multi-layer structure comprising a substrate, a first layer disposed on the substrate, a second layer disposed on the first layer, and a third layer that includes silver nanowires and that is disposed on the second layer;

generating at least one laser pulse having laser parameters selected for non-ablatively changing the conductivity of a selected portion of the silver nanowires of the third layer such that the selected portion of the silver nanowires remains intact and becomes non-conductive; and

directing the pulse to the multi-layer structure;

wherein the conductive state of the first layer remains unchanged by the pulse.

2. The method of claim 1 , wherein the first layer includes silver nanowires.

3. The method of claim 1 , wherein the first layer includes indium tin oxide.

4. The method of claim 1 , wherein the second layer is a photoresist with insulation properties.

5. The method of claim 1 , wherein the second layer is situated to protect the first layer from conductivity altering characteristics of the pulse.

6. The method of claim 5 , wherein the second layer is situated to scatter or absorb energy from the pulse.

7. The method of claim 1 , wherein the first layer has a higher laser pulse conductivity alteration threshold than the third layer.

8. The method of claim 1 , further comprising heat treating the first layer so as to increase a laser pulse conductivity altering threshold.

9. A method of forming a multi-layer stack-up structure, comprising:

providing a substrate;

depositing a conductive first layer on the substrate;

laser patterning the first layer such that selected portions of the first layer become non-conductive;

depositing an insulating second layer on the first layer;

depositing on the second layer a conductive third layer of silver nanowires; and

non-ablatively laser patterning the third layer such that selected portions of the silver nanowires of the third layer remain intact and become non-conductive without changing the conductive state of the first layer.

10. The method of claim 9 , wherein the first layer includes silver nanowires.

11. The method of claim 9 , wherein the first layer includes indium tin oxide.

12. The method of claim 9 , wherein the second layer is photoresist and has electrical insulation properties.

13. The method of claim 9 , wherein the second layer is situated to protect the first layer from changing conductivity during the non-ablative laser patterning of the third layer.

14. The method of claim 13 , wherein the second layer is situated to scatter or absorb energy during the non-ablative laser patterning of the third layer.

15. The method of claim 9 , wherein the first layer has a higher laser pulse conductivity alteration threshold than the third layer.

16. The method of claim 9 , further comprising heat treating the first layer after the first layer has been laser patterned.

17. The method of claim 9 , wherein the laser patterning of the first layer is non-ablative.

Assignments (4)
SECURITY INTEREST Recorded Oct 23, 2018
From: NLIGHT, INC.
To: PACIFIC WESTERN BANK
Reel/Frame 047291/0833 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 13, 2017
From: DITTLI, ADAM; MARTINSEN, ROBERT J.
To: NLIGHT PHOTONICS CORPORATION
Reel/Frame 042004/0873 →
CHANGE OF NAME Recorded Apr 13, 2017
From: NLIGHT PHOTONICS CORPORATION
To: NLIGHT, INC.
Reel/Frame 042251/0402 →
SECURITY INTEREST Recorded Feb 2, 2017
From: NLIGHT, INC.
To: PACIFIC WESTERN BANK
Reel/Frame 041597/0679 →