Barrier film, organic el device, flexible substrate, and method for manufacturing barrier film
View Patent ↗A barrier film that contains primarily silicon nitride has a total hydrogen concentration of 3×10 22 atoms/cm 3 or higher and a silicon-bonded hydrogen concentration proportion of 40% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration.
1. An organic EL device comprising:
a first barrier film that contains primarily silicon nitride;
a second barrier film that contains primarily silicon nitride;
an organic EL element that is disposed between the first barrier film and the second barrier film;
a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween;
a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween; and
a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride, wherein
at least one of the first barrier film and the second barrier film has a total hydrogen concentration of 3×10 22 atoms/cm 3 or higher and a silicon-bonded hydrogen concentration proportion of 55% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration, and
the first barrier film and the second barrier film each have a higher silicon-bonded hydrogen concentration proportion than the third barrier film has.
2. The organic EL device of claim 1 , wherein
the whole area of the at least one barrier film has the silicon-bonded hydrogen concentration proportion of 55% or higher.
3. The organic EL device of claim 1 , wherein
the first barrier film and the second barrier film each have a higher total hydrogen concentration than the third barrier film has.
4. An organic EL device comprising:
a first barrier film that contains primarily silicon nitride;
a second barrier film that contains primarily silicon nitride;
an organic EL element that is disposed between the first barrier film and the second barrier film;
a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween;
a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween; and
a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride, wherein
at least one of the first barrier film and the second barrier film has a total hydrogen concentration of 3×10 22 atoms/cm 3 or higher and a silicon-bonded hydrogen concentration proportion of 55% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration, and
the first barrier film and the second barrier film each have a higher total hydrogen concentration than the third barrier film has.
5. An organic EL device comprising:
a first barrier film that contains primarily silicon nitride;
a second barrier film that contains primarily silicon nitride;
an organic EL element that is disposed between the first barrier film and the second barrier film;
a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween;
a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween; and
a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride, wherein
at least one of the first barrier film and the second barrier film has a total hydrogen concentration of 3×10 22 atoms/cm 3 or higher and a silicon-bonded hydrogen concentration proportion of 55% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration, wherein
light emitted from the organic EL element is extracted externally through the first flexible substrate, the first barrier film has a lower nitrogen-bonded hydrogen concentration proportion than the third barrier film has, and the third barrier film has a lower nitrogen-bonded hydrogen concentration proportion than the second barrier film has, the nitrogen-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to nitrogen to the total hydrogen concentration, or
the light emitted from the organic EL element is extracted externally through the second flexible substrate, the second barrier film has a lower nitrogen-bonded hydrogen concentration proportion than the third barrier film has, and the third barrier film has a lower nitrogen-bonded hydrogen concentration proportion than the first barrier film has.
6. An organic EL device comprising:
a first barrier film that contains primarily silicon nitride;
a second barrier film that contains primarily silicon nitride;
an organic EL element that is disposed between the first barrier film and the second barrier film;
a thin-film transistor that is disposed between the first barrier film and the organic EL element, is electrically connected with the organic EL element, and includes an oxide semiconductor layer; and
a third barrier film that is disposed between the thin-film transistor and the organic EL element, and contains primarily silicon nitride, wherein
at least one of the first barrier film and the second barrier film has a total hydrogen concentration of 3×10 22 atoms/cm 3 or higher and a silicon-bonded hydrogen concentration proportion of 55% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration, and
the first barrier film and the third barrier film each have a lower total hydrogen concentration than the second barrier film has.