Method for producing an optoelectronic component

1. A method for producing an optoelectronic component, the method comprising:

providing an optoelectronic semiconductor chip having a front side and rear side, wherein the front side of the optoelectronic semiconductor chip is provided for passage of electromagnetic radiation;

applying a sacrificial layer on the rear side, wherein the sacrificial layer has substantially the same lateral dimensions as the rear side;

forming a molded body, wherein the optoelectronic semiconductor chip is at least partly embedded into the molded body; and

removing the sacrificial layer,

wherein an electrically conducting conductive element with a conductive element sacrificial layer arranged on the conductive element is embedded together with the optoelectronic semiconductor chip into the molded body, and

wherein the conductive element sacrificial layer is removed together with the sacrificial layer.

2. The method as claimed in claim 1 , wherein, before removing the sacrificial layer, the method further comprises partly removing the molded body in order to make the sacrificial layer accessible.

3. The method as claimed in claim 1 , wherein the optoelectronic semiconductor chip is embedded into the molded body in such a way that the front side of the optoelectronic semiconductor chip is flush with an underside of the molded body.

4. The method as claimed in claim 3 , further comprising, before forming the molded body, arranging the optoelectronic semiconductor chip on a carrier, wherein the front side of the optoelectronic semiconductor chip faces a surface of the carrier.

5. The method as claimed in claim 4 , wherein a first lateral section of the surface of the carrier is elevated relative to a second lateral section of the surface of the carrier.

6. The method as claimed in claim 4 , further comprising detaching the molded body from the carrier.

7. The method as claimed in claim 1 , wherein the optoelectronic semiconductor chip is provided with a metallization arranged on the rear side.

8. The method as claimed in claim 7 , further comprising, after removing the sacrificial layer, electrolessly depositing a metal on the rear side of the optoelectronic semiconductor chip.

9. The method as claimed in claim 8 , further comprising surface grinding the metal deposited on the rear side of the optoelectronic semiconductor chip, and the molded body.

10. The method as claimed in claim 1 , wherein a plurality of optoelectronic semiconductor chips are embedded together into the molded body, and wherein the molded body is divided in order to obtain a plurality of optoelectronic components.

11. The method as claimed in claim 1 , wherein the front side of the optoelectronic semiconductor chip comprises a light emitting surface.

12. A method for producing a plurality of optoelectronic components, the method comprising:

adhering a plurality of optoelectronic semiconductor chips to a top side of a carrier, each optoelectronic semiconductor chip having a front side and a rear side, the rear side opposite the front side, wherein each front side faces the top side of the carrier, each front side being provided for passage of electromagnetic radiation, and wherein each rear side has a sacrificial layer formed thereon, wherein the sacrificial layers have substantially the same lateral dimensions as the rear sides;

adhering a plurality of electrically conductive elements to the top side of the carrier, each electrically conductive element comprising a sacrificial layer, wherein the electrically conductive elements are embedded together with the optoelectronic semiconductor chips into a molded body;

forming the molded body over the top side of the carrier, wherein each optoelectronic semiconductor chip is embedded in the molded body;

removing a portion of the molded body in order to expose the sacrificial layer of each optoelectronic semiconductor chip;

removing the sacrificial layer of each optoelectronic semiconductor chip;

forming a metallization on the rear side of each optoelectronic semiconductor chip;

exposing the metallization of the rear side and a surface of the front side of each optoelectronic semiconductor chip by surface grinding the molded body over the rear side and detaching the molded body from the carrier; and

singulating the molded body to obtain the plurality of optoelectronic components, each optoelectronic component including an electrically conductive element.

13. The method as claimed in claim 12 , wherein forming the metallization comprises electrolessly depositing a metal on the rear side of the optoelectronic semiconductor chip.

14. The method as claimed in claim 12 , wherein the top side of the carrier includes a plurality of elevated sections, the optoelectronic semiconductor chips being adhered to the elevated sections.

15. The method as claimed in claim 14 , wherein, after the singulating, the optoelectronic semiconductor chip of each optoelectronic component is disposed within a cavity of material of the molded body.