Process for treating a magnetic structure

1. A process for treating a magnetic structure, wherein it comprises the following steps:

providing a magnetic structure comprising a stack of magnetic layers, at least one first layer of magnetic material comprising a CoFeB alloy being deposited on a substrate to form part of the stack;

irradiating the magnetic structure with He+, H+, Ar+, Xe+, or Ga+ ions, which are emitted ions passing through the magnetic layers of the stack where they locally alter the structure by creating inter-atomic displacements, and are implanted deep in the substrate on which the stack was deposited, at a depth in the substrate between 100 nm and 300 nm; and

simultaneously holding the magnetic structure at a preset temperature profile and for a preset time.

2. The process according to claim 1 , wherein the preset temperature is between 20° C. and 200° C.

3. The process according to claim 1 , wherein the preset temperature is between 15° C. and 40° C.

4. The process according to claim 1 , wherein the preset dine is less than or equal to 1 hour.

5. The process according to claim 1 , wherein the magnetic material is initially amorphous.

6. The process according to claim 1 , wherein the magnetic material is initially crystalline.

7. The process according to claim 1 wherein the ions have an energy of between 0.1 keV and 150 keV.

8. The process according to claim 1 , wherein, during the irradiation step, the ions are emitted at a dose of between 1×10 13 ions/cm 2 and 5×10 16 ions/cm 2 .

9. The process according to claim 1 , wherein, during the irradiation step, the ions bombard the magnetic structure via through-openings in a mask.

10. The process according to claim 1 , wherein the magnetic structure comprises at least one second layer of insulation in contact with the first layer of magnetic material.

11. The process according to claim 10 , wherein the magnetic structure comprises a stack of alternating first layers of magnetic material and second layers of insulation.