Ultra-conformal carbon film deposition
Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source:plasma-initiating gas:dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features.
1. A method of forming a conformal amorphous carbon layer on a substrate in a processing chamber, comprising:
depositing a dielectric layer on a substrate;
forming a pattern into the dielectric layer by removing portions of the dielectric layer to expose portions of an upper surface of the substrate;
depositing a conformal sacrificial dielectric layer on the portions of the upper surface of the substrate and on remaining portions of the dielectric layer;
selectively removing the sacrificial dielectric layer to expose upper surfaces of the remaining portions of the dielectric layer and to expose the upper surface of the substrate to provide a first spacer on sidewalls of the dielectric layer;
forming a second spacer adjacent or in contact with the first spacer, comprising:
introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source:plasma-initiating gas:dilution gas is in a ratio of 1:5:20;
generating a plasma in the processing chamber at a deposition temperature of about 75° C. to about 650° C. to deposit a conformal amorphous carbon layer on the upper surfaces of the remaining portions of the dielectric layer and the exposed upper surface of the substrate; and
selectively removing the amorphous carbon layer using an anisotropic etching process to expose upper surfaces of the remaining portions of the dielectric layer and the upper surface of the substrate; and
removing the remaining portions of the dielectric layer.
2. The method of claim 1 , wherein forming the second spacer adjacent or in contact with the first spacer further comprising:
introducing a nitrogen-containing gas into the processing chamber, and the nitrogen-containing gas is introduced at a nitrogen-containing gas to a hydrocarbon source ratio of about 1:40 to about 10:1.
3. The method of claim 1 , wherein forming the second spacer adjacent or in contact with the first spacer further comprising:
introducing a dilution gas into the processing chamber, wherein the dilution gas is introduced at a dilution gas to a hydrocarbon source ratio of about 20:1 to about 30:1.
4. The method of claim 1 , wherein the hydrocarbon source is a nitrogen-containing hydrocarbon source, and the nitrogen-containing hydrocarbon source comprises one or more nitrogen containing hydrocarbon compounds selected from the group consisting of methylamine, dimethylamine, trimethylamine (TMA), triethylamine, aniline, quinoline, pyridine, acrilonitrile, benzonitrile, and combinations thereof.
5. The method of claim 1 , wherein the conformal amorphous carbon layer is a nitrogen-doped amorphous carbon having a carbon:nitrogen ratio of between about 0.1% nitrogen to about 10% nitrogen.
6. The method of claim 1 , wherein the hydrocarbon compound comprises acetylene (C 2 H 2 ), ethylene (C 2 H 4 ), ethane (C 2 H 6 ), propylene (C 3 H 6 ), propyne (C 3 H 4 ), propane (C 3 H 8 ), butane (C 4 H 10 ), butylene (C 4 H 8 ), butyne (C 4 H 6 ), phenylacetylene (C 8 H 6 ), or combinations thereof.
7. A method of forming a conformal amorphous carbon layer on a substrate in a processing chamber, comprising:
removing portions of a dielectric layer formed on a substrate to expose portions of an upper surface of the substrate;
depositing a conformal sacrificial dielectric layer on the portions of the upper surface of the substrate and on remaining portions of the dielectric layer;
selectively removing the sacrificial dielectric layer to expose upper surfaces of the remaining portions of the dielectric layer and to expose the upper surface of the substrate to provide a first spacer on sidewalls of the dielectric layer;
forming a second spacer on the first spacer, comprising:
introducing a hydrocarbon source, a nitrogen-containing gas, and a dilution gas into the processing chamber;
generating a plasma in the processing chamber to deposit a conformal amorphous carbon layer on the upper surfaces of the remaining portions of the dielectric layer and the exposed upper surface of the substrate; and
selectively removing the amorphous carbon layer using an anisotropic etching process to expose upper surfaces of the remaining portions of the dielectric layer and the upper surface of the substrate; and
removing the remaining portions of the dielectric layer.
8. The method of claim 7 , wherein the nitrogen-containing gas is introduced at a nitrogen-containing gas to a hydrocarbon source ratio of about 1:40 to about 10:1.
9. The method of claim 7 , wherein the dilution gas is introduced at a dilution gas to a hydrocarbon source ratio of about 20:1 to about 30:1.
10. The method of claim 7 , wherein forming a second spacer on the first spacer further comprising:
introducing a plasma-initiating gas into the processing chamber, and the plasma-initiating gas is introduced at a volumetric flow ratio of hydrocarbon source:plasma-initiating gas:dilution gas of about 1:5:20.
11. The method of claim 7 , wherein the plasma is generated in the processing chamber at a deposition temperature of about 80° C. to about 550° C.
12. The method of claim 7 , wherein the plasma is generated in the processing chamber at a deposition temperature of about 200° C. or less.
13. The method of claim 7 , wherein the hydrocarbon compound comprises acetylene (C 2 H 2 ), ethylene (C 2 H 4 ), ethane (C 2 H 6 ), propylene (C 3 H 6 ), propyne (C 3 H 4 ), propane (C 3 H 8 ), butane (C 4 H 10 ), butylene (C 4 H 8 ), butyne (C 4 H 6 ), phenylacetylene (C 8 H 6 ), or combinations thereof.
14. The method of claim 7 , wherein the hydrocarbon source is a nitrogen-containing hydrocarbon source.
15. The method of claim 7 , wherein the nitrogen-containing hydrocarbon source comprises one or more nitrogen containing hydrocarbon compounds selected from the group consisting of methylamine, dimethylamine, trimethylamine (TMA), triethylamine, aniline, quinoline, pyridine, acrilonitrile, benzonitrile, and combinations thereof.
16. The method of claim 7 , wherein the amorphous carbon layer is a nitrogen-doped amorphous carbon having a carbon:nitrogen ratio of between about 2% nitrogen to about 6% nitrogen.