Method of manufacturing organic electronic device
Provided are a method of manufacturing an organic electronic device (OED), an OED manufactured thereby, and a use of the OED. During a process of manufacturing an OED, exposure of a pad region may be efficiently performed in a simple process, thereby preventing permeation of a contaminant, and an OED manufactured by the method and a use of the OED may be provided.
1. An organic electronic device (OED), comprising:
a substrate;
a device region formed on the substrate, and including a first electrode layer, an organic layer, and a second electrode layer, which are sequentially stacked;
a pad region formed on the substrate, and electrically connected to the first or second electrode layer;
an inorganic material layer formed in the device region; and
a first polymer film present in the pad region, and including a halogenated hydrocarbon group or a hydrocarbon group.
2. The OED according to claim 1 , comprising:
a second polymer film formed between the device region and the inorganic material layer.
3. The OED according to claim 2 , wherein the second polymer film includes a hydroxyl group, an epoxy group, an amino group, or a carboxyl group.
4. A light source for a display, comprising:
the OED of claim 1 .
5. A lighting device, comprising:
the OED of claim 1 .
6. A method of manufacturing an organic electronic device (OED), comprising:
forming a first polymer film at least in a pad region of a substrate on which a device region including a first electrode layer, an organic layer, and a second electrode layer, which are sequentially stacked, and the pad region electrically connected to the first or second electrode layer are formed;
forming an inorganic material layer on the substrate; and
removing the first polymer film to expose the pad region.
7. The method according to claim 6 , wherein the first polymer film is formed by initiated chemical vapor deposition (iCVD).
8. The method according to claim 7 , wherein the first polymer film is formed under a pressure of 200 mT to 1 T.
9. The method according to claim 6 , wherein the first polymer film is formed to have a thickness of 100 nm or more.
10. The method according to claim 6 , wherein the first polymer film includes a hydrocarbon group or a halogenated hydrocarbon group.
11. The method according to claim 6 , wherein the first polymer film is formed using a compound of Formula 1:
where R 1 is hydrogen or an alkyl group, and R 2 is a hydrocarbon group which is not substituted or substituted by at least one halogen atom.
12. The method according to claim 6 , wherein the inorganic material layer is formed by atomic layer deposition (ALD).
13. The method according to claim 6 , wherein the inorganic material layer is a barrier layer.
14. The method according to claim 6 , further comprising:
before forming an inorganic material layer,
forming a second polymer film in the device region.
15. The method according to claim 14 , wherein the second polymer film includes a hydroxyl group, an epoxy group, an amino group, or a carboxyl group.
16. The method according to claim 14 , wherein the second polymer film is formed of a carboxyl group-containing monomer such as hydroxyalkyl (meth)acrylate or hydroxypolyalkyleneglycol (meth)acrylate, a glycidyl group-containing monomer, or an amide-based monomer.