Semiconductor device and method of manufacturing the same

1. A semiconductor device comprising:

a semiconductor substrate;

a first coil formed on the semiconductor substrate via a first insulation film;

a second insulation film formed on the semiconductor substrate so as to cover the first insulation film and the first coil;

a first pad formed on the second insulation film and disposed at a position not overlapped with the first coil in a planar view;

a laminated insulation film formed on the second insulation film, the laminated insulation film having a first opening from which the first pad is exposed;

a second coil formed on the laminated insulation film and disposed above the first coil; and

a first wiring formed on the laminated insulation film including an upper portion of the first pad exposed from the first opening, the first wiring being electrically connected to the first pad,

wherein the laminated insulation film includes a silicon oxide film, a silicon nitride film on the silicon oxide film, and a resin film on the silicon nitride film,

the first coil and the second coil are not connected by a conductor but magnetically coupled to each other, and

a part of the first pad is covered by the laminated insulation film.

2. The semiconductor device according to claim 1 ,

wherein the first wiring is formed in a same layer as the second coil,

the first wiring and the second coil are not connected to each other by a conductor, and

the first wiring is connected to a second pad formed on the laminated insulation film.

3. The semiconductor device according to claim 1 ,

wherein the first pad includes an electrically-conductive material containing aluminum as a main component.

4. The semiconductor device according to claim 1 ,

wherein the first pad comprises a pad used in a probe test.

5. The semiconductor device according to claim 1 ,

wherein a thickness of the silicon nitride film is 0.5 μm or thicker.

6. The semiconductor device according to claim 5 ,

wherein, between the first coil and the second coil, a thickness of the silicon oxide film is thicker than the thickness of the silicon nitride film.

7. The semiconductor device according to claim 1 ,

wherein a central portion of the first pad is not covered by the laminated insulation film, and an outer peripheral portion of the first pad is covered by the laminated insulation film,

the first opening of the laminated insulation film is formed by a second opening of the silicon oxide film, a third opening of the silicon nitride film, and a fourth opening of the resin film,

the third opening is included in the second opening in the planar view, and

an inner wall of the second opening of the silicon oxide film is covered by the silicon nitride film.

8. The semiconductor device according to claim 7 ,

wherein the third opening is included in the fourth opening in the planar view, and

an inner wall of the third opening of the silicon nitride film is not covered by the resin film.

9. The semiconductor device according to claim 8 ,

wherein a step portion of an upper surface of the silicon nitride film formed by the inner wall of the second opening of the silicon oxide film is covered by the resin film.

10. The semiconductor device according to claim 1 ,

wherein an inner wall of the third opening of the silicon nitride film is tapered, and

an inner wall of the fourth opening of the resin film is tapered.

11. The semiconductor device according to claim 1 ,

wherein the silicon oxide film comprises a HDP-CVD oxide film.

12. The semiconductor device according to claim 1 ,

wherein the resin film comprises a polyimide film.

13. The semiconductor device according to claim 1 ,

wherein the second coil is connected to a third pad formed on the laminated insulation film,

a protective insulation film is formed on the laminated insulation film so as to cover the first wiring and the second coil, and

the second pad and the third pad are exposed from the protective insulation film.