Compound semiconductor single crystal ingot for photoelectric conversion devices, photoelectric conversion device, and production method for compound semiconductor single crystal ingot for photoelectric conversion devices
View Patent ↗The present invention increases the conversion efficiency of a photoelectric conversion element that uses cadmium zinc telluride or cadmium telluride (Cd(Zn)Te) compound semiconductor single crystals containing a group 1A element as an impurity. A heat-resistant pot is filled with raw material and a group 1A element, which is reacted with a portion of the raw material, and the container is heated, thereby melting the raw material into a melt and diffusing the dissociated group 1A element in the melt, producing single crystals from the melt. Compound semiconductor single crystals for photoelectric conversion elements having a hole concentration of 4×10 15 cm −3 to 1×10 18 cm −3 are produced in this manner. Using a substrate ( 2 ) that has been cut out from the compound semiconductor single crystals for photoelectric conversion elements enables the conversion efficiency of a photoelectric conversion element ( 10 ) to be increased.
1. A compound semiconductor single crystal ingot of cadmium telluride or cadmium zinc telluride for a photoelectric conversion device containing at least one group 1A impurity element and having a hole concentration in the range of 4×10 15 cm −3 to 1×10 18 cm −3 .
2. The compound semiconductor single crystal ingot for a photoelectric conversion device according to claim 1 , wherein the at least one group 1A element comprises sodium and the concentration of the sodium ranges from 2×10 15 cm −3 to 1×10 20 cm −3 .
3. The compound semiconductor single crystal ingot for a photoelectric conversion device according to claim 2 , wherein the at least one group 1A element comprises sodium and lithium and the concentration of the lithium ranges from 2×10 15 cm −3 to 1×10 20 cm −3 .
4. The compound semiconductor single crystal ingot for a photoelectric conversion device according to claim 1 , wherein the at least one group 1A element comprises lithium and the concentration of the lithium ranges from 2×10 15 cm −3 to 1×10 20 cm −3 .
5. A photoelectric conversion device: comprising
a p-type semiconductor substrate cut out from a compound semiconductor single crystal ingot for a photoelectric conversion device according to claim 1 ,
an n-type semiconductor layer formed on a first main surface of the p-type semiconductor substrate,
a first electrode formed on a surface of the n-type semiconductor layer, and
a second electrode formed on a second main surface of the p-type semiconductor substrate.
6. A method for producing a compound semiconductor single crystal ingot of cadmium telluride or cadmium zinc telluride for a photoelectric conversion device containing at least one group 1A impurity element, the method comprising:
filling a heat-resistant pot with a raw material and a group 1A element combined with part of the raw material,
melting the raw material to obtain a melt by heating the pot, and diffusing the dissociated group 1A element into the melt, and
growing a single crystal having a hole concentration in the range of 4×10 15 cm −3 to 1×10 18 cm −3 from the melt.
7. The method for producing a compound semiconductor single crystal ingot for a photoelectric conversion device according to claim 6 , wherein
the at least one group 1A element is sodium, and
the pot is filled with the raw material and sodium telluride.
8. The method for producing a compound semiconductor single crystal ingot for a photoelectric conversion device according to claim 7 , wherein
the at least one group 1A element is sodium and lithium, and
the pot is filled with the raw material, sodium telluride, and lithium telluride.
9. The method for producing a compound semiconductor single crystal ingot for a photoelectric conversion device according to claim 6 , wherein
the at least one group 1A element is lithium, and the pot is filled with the raw material and lithium telluride.
10. The method for producing a compound semiconductor single crystal ingot for a photoelectric conversion device according to claim 6 , wherein the pot is composed of boron nitride.
11. The method for producing a compound semiconductor single crystal ingot for a photoelectric conversion device according to claim 6 , wherein the pot is composed of quartz.
12. The method for producing a compound semiconductor single crystal ingot for a photoelectric conversion device according to claim 6 , wherein the melt is solidified by a vertical gradient freeze process.