Method for manufacturing a suspended single carbon nanowire and piled nano-electrode pairs
View Patent ↗The present invention provides a method for manufacturing a suspended single carbon nanowire and piled nano-electrode pairs, and a suspended single carbon nanowire and piled nano-electrode pairs manufactured using said method. A suspended single carbon nanowire, which is manufactured at a high yield by the method for manufacturing a suspended single carbon nanowire according to the present invention, has a minimized dimension, and a suspended carbon nanomesh, which is manufactured at a high yield by the method for manufacturing piled nano-electrode pairs according to the present invention, is thin and dense. The present invention also provides a gas sensor or an electrochemical sensor, to which a suspended single carbon nanowire and piled nano-electrode pairs manufactured by the method according to the present invention are applied.
1. A method for manufacturing a suspended single carbon nanowire comprising:
(a) depositing an insulation layer on a substrate;
(b) coating a photoresist on the insulation layer;
(c) forming photoresist post parts on an upper portion of the insulation layer by primarily exposing the photoresist through a photomask having a post shape;
(d) forming a micro photoresist wire connecting the photoresist post parts to each other by secondarily exposing an upper portion of the photoresist between the photoresist post parts in a shape of a micro-sized wire connecting the photoresist post parts through a photomask having a wire shape;
(e) removing the photoresist of a remaining portion except for portions exposed in steps (c) and (d) by performing a development process; and
(f) creating a vacuum condition, and forming the suspended single carbon nanowire by pyrolyzing the photoresist post parts and the micro-sized wire remaining after step (e),
wherein the pyrolysis of step (f) is performed in two steps including a first step and a second step, the second step being performed at a temperature higher than that of the first step.
2. The method of claim 1 , wherein the substrate is a silicon substrate.
3. The method of claim 1 , wherein the insulation layer is made of silicon dioxide or silicon nitride.
4. The method of claim 1 , wherein the photoresist is SU-8 photoresist.
5. The method of claim 1 , wherein in the pyrolysis of step (f), the first step is performed at 300° C. to 400° C. for 30 min to 90 min, and the second step is performed at 900° C. to 1000° C. for 30 min to 90 min.
6. The method of claim 5 , wherein the suspended carbon nanowire has a thickness of 250 nm or less and a width of 250 nm or less.
7. The method of claim 6 , wherein the thickness is 180 nm to 240 nm and the width is 170 nm to 220 nm.
8. A method for manufacturing piled nano-electrode pairs, comprising:
(a) depositing an insulation layer on a substrate;
(b) primarily coating a photoresist on the insulation layer;
(c) forming a photoresist planar electrode part on an upper portion of the insulation layer by primarily exposing the primarily-coated photoresist through a photomask having a planar electrode shape;
(d) removing the photoresist of a remaining portion except for portions exposed in step (c) by performing a development process;
(e) secondarily coating a photoresist on the insulation layer and the photoresist planar electrode part remaining after step (d);
(f) forming photoresist post parts on an upper portion of the insulation layer by secondarily exposing the secondarily coated photoresist through a photomask having a post shape;
(g) forming a micro photoresist wire connecting the photoresist post parts to each other by tertiarily exposing an upper portion of the photoresist between the photoresist post parts in a shape of a micro-sized wire connecting the photoresist post parts through a photomask having a wire shape;
(h) removing the photoresist of a remaining portion except for portions exposed in step (g) by performing a development process; and
(i) creating a vacuum condition, and forming a planar electrode and suspended carbon nanomeshes by performing pyrolysis on the photoresist planar electrode parts, the photoresist post parts, and the micro-sized wire remaining after step (h),
wherein the pyrolysis of step (i) is performed in two steps including a first step and a second step, the second step being performed at a temperature higher than that of the first step.
9. The method of claim 8 , wherein the substrate is a silicon substrate.
10. The method of claim 8 , wherein the insulation layer is made of silicon dioxide or silicon nitride.
11. The method of claim 8 , wherein the primarily coated photoresist and the secondarily coated photoresist are SU-8 photoresist.
12. The method of claim 8 , wherein the secondarily coated photoresist is thicker than the primarily coated photoresist.
13. The method of claim 8 , wherein an angle (θ) between wires of the photomask having a wire shape is 40 to 60 degrees.
14. The method of claim 8 , wherein the first step is performed at 300° C. to 400° C. for 30 min to 90 min, and the second step is performed at 900° C. to 1000° C. for 30 min to 90 min.
15. The method of claim 14 , wherein the suspended carbon nanomeshes have a width of 200 nm to 400 nm, and a carbon nanowire has a gap of 3 μm to 7 μm.