Top emitting semiconductor light emitting device

1. A method comprising:

growing a semiconductor structure on a growth substrate and forming a plurality of semiconductor light emitting devices on said growth substrate from said semiconductor structure;

attaching the plurality of semiconductor light emitting devices on the growth substrate to a carrier;

while the plurality of semiconductor light emitting devices are attached to the carrier, removing a first portion of the growth substrate between the semiconductor light emitting devices while a plurality of second portions of the growth substrate remains on a top surface of the semiconductor light emitting devices;

disposing a reflective material in areas between the plurality of second portions of the growth substrate;

separating two neighboring semiconductor light emitting devices, wherein separating comprises cutting the reflective material and the semiconductor structure; and

after separating two neighboring semiconductor light emitting devices, removing the carrier;

wherein after said separating two neighboring semiconductor light emitting devices, each semiconductor light emitting device comprises one of the second portions of the growth substrate on which a portion of the semiconductor structure is grown.

2. The method of claim 1 wherein removing a first portion of the growth substrate between the semiconductor light emitting devices while a plurality of second portions of the growth substrate remains on a top surface of the semiconductor light emitting devices comprises forming slots in the growth substrate in areas between the semiconductor light emitting devices, wherein disposing a reflective material in areas between the plurality of second portions of the semiconductor light emitting devices comprises disposing a reflective material in the slots.

3. The method of claim 1 further comprising attaching a wavelength converting member to a top surface of the second portions of growth substrate on each of the plurality of semiconductor light emitting devices prior to disposing a reflective material in areas between the semiconductor light emitting devices, wherein the wavelength converting member is formed separately from the semiconductor light emitting device.

4. A method comprising

growing a semiconductor structure on a growth substrate;

forming the semiconductor structure into a plurality of semiconductor light emitting devices, each having a portion of the growth substrate on a top surface;

attaching each of the plurality of semiconductor light emitting devices to a carrier;

attaching a plurality of wavelength converting members directly to top surfaces of the portions of growth substrate on each of the plurality of semiconductor light emitting devices, wherein the wavelength converting member is formed separately from the semiconductor light emitting device;

disposing a reflective material in areas between any two neighboring ones of the semiconductor light emitting devices, including in between their corresponding portions of the growth substrate, and between their corresponding wavelength converting members;

separating two neighboring semiconductor light emitting devices, wherein separating comprises cutting the reflective material; and

after separating two neighboring semiconductor light emitting devices, removing the carrier.

5. The method of claim 1 wherein attaching a plurality of wavelength converting members directly to top surfaces of the portions of the growth substrate on each of the plurality of semiconductor light emitting devices comprises attaching the plurality of wavelength converting members to the carrier; and attaching the top surfaces of the second portion of the growth substrate to the plurality of wavelength converting members attached to the carrier.

6. A method comprising:

attaching a plurality of semiconductor light emitting devices to a carrier;

disposing a reflective material in areas between the semiconductor light emitting devices;

separating two neighboring semiconductor light emitting devices, wherein separating comprises cutting the reflective material; and

after separating two neighboring semiconductor light emitting devices, removing the carrier;

wherein after said separating two neighboring semiconductor light emitting devices, each semiconductor light emitting device comprises a growth substrate on which a semiconductor portion of the semiconductor light emitting device is grown; and

wherein disposing a reflective material in areas between the semiconductor light emitting devices comprises:

forming a mask layer on first surfaces of the semiconductor light emitting devices;

forming a reflective layer over the mask layer and sidewalls of the plurality of semiconductor light emitting devices; and

removing the mask layer.

7. The method of claim 6 further comprising forming a wavelength converting layer over the first surfaces of the semiconductor light emitting devices after removing the mask layer.

8. The method of claim 7 wherein forming a wavelength converting layer comprises using a technique selected from the group consisting of lamination, molding, spray coating, and spin coating.

9. The method of claim 7 wherein forming a wavelength converting layer comprises forming the wavelength converting layer such that it fills regions between neighboring semiconductor light emitting devices.

10. The method of claim 6 wherein the reflective layer is selected from the group consisting of a dichroic minor, a distributed Bragg reflector, a metallic film, and a dielectric stack.

11. The method of claim 6 wherein forming a reflective layer comprises using a technique selected from the group consisting of physical vapor deposition, chemical vapor deposition, sputtering, evaporation, and spray-coating.

12. The method of claim 6 wherein forming a reflective layer comprises conformally coating the plurality of semiconductor light emitting devices.

13. The method of claim 1 wherein the reflective material comprises particles disposed in a transparent material, wherein the particles and transparent material have different indices of refraction.

14. The method of claim 13 wherein the particles are selected from the group consisting of TiO 2 , ZnO, and Al 2 O 3 and the transparent material is selected from the group consisting of silicone molding compound, liquid silicone, epoxy, and glass.

15. The method of claim 2 wherein the slots have angled sidewalls.

16. The method of claim 6 wherein the wavelength converting member is selected from the group consisting of phosphor formed into a ceramic platelet and a wavelength converting material that is disposed in a transparent material formed into a sheet, then cut into individual wavelength converting members, the transparent material selected from the group consisting of glass, silicon, or epoxy.

17. The method of claim 4 wherein forming a wavelength converting layer comprises using a technique selected from the group consisting of lamination, molding, dispensing, spray coating, and spin coating.