IP Library Granted Patent US 9,590,151
Granted Patent B2
US 9,590,151 · App. 14/785,620 · Granted Mar 7, 2017

Method for producing a plurality of radiation-emitting semiconductor chips

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Quick Facts
Patent No.
US 9,590,151
App. No.
14/785,620
Granted
Mar 7, 2017
Kind
B2
Abstract

A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps: providing a plurality of semiconductor bodies ( 1 ) which are suitable for emitting electromagnetic radiation from a radiation exit face ( 3 ), applying the semiconductor bodies ( 1 ) to a carrier ( 2 ), applying a first mask layer ( 4 ) to regions of the carrier ( 2 ) between the semiconductor bodies ( 1 ), applying a conversion layer ( 5 ) to the entire surface of the semiconductor bodies ( 1 ) and the first mask layer ( 4 ) using a spray coating method, and removing the first mask layer ( 4 ), such that in each case a conversion layer ( 5 ) arises on the radiation exit faces ( 3 ) of the semiconductor bodies ( 1 ).

Claims (39)

1. A method for producing a plurality of radiation-emitting semiconductor chips having the following steps:

providing a plurality of semiconductor bodies which are suitable for emitting electromagnetic radiation from a radiation exit face;

applying the semiconductor bodies to a carrier;

applying a first mask layer to regions of the carrier between the semiconductor bodies;

applying a conversion layer to the entire surface of the semiconductor bodies and the first mask layer using a spray coating method;

removing the first mask layer, such that in each case a conversion layer arises on the radiation exit faces of the semiconductor bodies;

applying a second mask layer to the conversion layer, which in each case completely covers the conversion layer and leaves the regions between the semiconductor bodies free;

applying a reflective layer over the entire surface of the second mask layer and the regions between the semiconductor bodies using a spray coating method; and

removing the second mask layer, such that the regions between the semiconductor bodies are covered with a reflective layer.

2. The method according to claim 1 , in which the first mask layer projects above the semiconductor bodies.

3. The method according to claim 1 , in which the conversion layer comprises an organic potting material, into which particles of an inorganic luminescent material have been introduced.

4. The method according to claim 3 , in which the spray coating method for applying the conversion layer ( 5 ) comprises the following steps:

providing a suspension of the luminescent material particles, the organic potting material and an organic solvent; and

spraying the suspension onto the surface to be coated.

5. The method according to claim 4 , in which the luminescent material particles have a concentration of between 10% by weight and 45% by weight inclusive in the suspension.

6. The method according to claim 1 , in which the diameter of the luminescent material particles has a median d 50 of at most 35 micrometers.

7. The method according to claim 1 , in which the conversion layer has a thickness of between 5 micrometers and 80 micrometers inclusive.

8. The method according to one claim 1 , in which the spray coating method for applying the conversion layer comprises a plurality of successive spraying steps, wherein in each spraying step an individual conversion layer is produced.

9. The method according to claim 8 , in which the individual conversion layers are dried between the individual spraying steps.

10. The method according to claim 1 , in which the reflective layer comprises reflective particles, which have been introduced into an organic potting material.

11. The method according to claim 1 , in which the spray coating method for applying the reflective layer comprises the following steps:

providing a suspension of reflective particles, an organic potting material and an organic solvent; and

spraying the suspension onto the surface to be coated.

12. The method according to claim 1 , in which the reflective layer has a thickness of between 5 micrometers and 30 micrometers inclusive.

13. The method according to claim 1 , in which one of the following devices is used as first mask layer and/or second mask layer: a patterned photoresist layer, a stencil or a prepatterned film.

14. A method for producing a plurality of radiation-emitting semiconductor chips having the following steps:

providing a plurality of semiconductor bodies which are suitable for emitting electromagnetic radiation from a radiation exit face;

applying the semiconductor bodies to a carrier;

applying a first mask layer to regions of the carrier between the semiconductor bodies;

applying a conversion layer to the entire surface of the semiconductor bodies and the first mask layer using a spray coating method;

removing the first mask layer, such that in each case a conversion layer arises on the radiation exit faces of the semiconductor bodies; and

applying an adhesion promoting layer over the entire surface of the carrier with the semiconductor bodies, wherein in each case a conversion layer is arranged on the radiation exit face.

15. A method for producing a plurality of radiation-emitting semiconductor chips having the following steps:

providing a plurality of semiconductor bodies which are suitable for emitting electromagnetic radiation from a radiation exit face;

applying the semiconductor bodies to a carrier;

applying a first mask layer to regions of the carrier between the semiconductor bodies;

applying a conversion layer to the entire surface of the semiconductor bodies and the first mask layer using a spray coating method;

removing the first mask layer, such that in each case a conversion layer arises on the radiation exit faces of the semiconductor bodies; and

applying a reflective layer over the entire surface of the semiconductor bodies, such that a reflective layer is arranged in the beam path of the semiconductor bodies of the subsequent semiconductor chips.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051467/0906 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 17, 2016
From: RICHTER, MARKUS; BAUMGARTNER, ALEXANDER; GALLMEIER, HANS-CHRISTOPH; ALBRECHT, TONY
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 038947/0828 →