RF impedance matching network
View Patent ↗An RF matching network includes a control circuit configured to instruct at least one EVC to alter its variable capacitance, the alteration of the variable capacitance causing the matching network to achieve a preliminary match state, the preliminary match state having an associated first reflection parameter value at an RF source output; and upon the achievement of the preliminary match state, instruct an RF source to alter a variable RF source frequency, the alteration of the variable RF source frequency causing achievement of a final match state, the final match state having an associated second reflection parameter value at the RF source output; wherein the second reflection parameter value is less than the first reflection parameter value.
1. A radio frequency (RF) impedance matching network comprising:
an RF input configured to receive an RF signal from an RF source;
an RF output configured to operably couple to a plasma chamber;
at least one electronically variable capacitor (EVC) having a variable capacitance;
a control circuit configured to:
instruct the at least one EVC to alter the variable capacitance, the alteration of the variable capacitance causing the matching network to achieve a preliminary match state, the preliminary match state having an associated first reflection parameter value at an RF source output; and
upon the achievement of the preliminary match state, instruct the RF source to alter a variable RF source frequency, the alteration of the variable RF source frequency causing achievement of a final match state, the final match state having an associated second reflection parameter value at the RF source output;
wherein the second reflection parameter value is less than the first reflection parameter value; and
wherein, when a subsequent reflection parameter value at the RF source output exceeds a predetermined value, the control circuit again instructs the alteration of the variable capacitance and the variable RF source frequency.
2. The matching network of claim 1 wherein the first reflection parameter value and the second reflection parameter value are reflected power values.
3. The matching network of claim 1 further comprising a sensor configured to measure the first reflection parameter value at the RF source output and the second reflection parameter value at the RF source output.
4. The matching network of claim 1 wherein:
prior to achievement of the preliminary match state, the matching network is in an auto tuning mode in which the variable capacitance can be altered;
after achievement of the preliminary match state, the matching network is in a manual tuning mode in which the variable capacitance cannot be altered; and
after achievement of the final match state, the matching network re-enters the auto tuning mode.
5. The matching network of claim 4 wherein, during the alteration of the variable RF source frequency, the RF source sends a hold signal to the matching network, the hold signal instructing the matching network to remain in manual tuning mode.
6. The matching network of claim 5 wherein, after achievement of the final match state, the RF source sends a resume signal to the matching network, the resume signal instructing the matching network to re-enter auto tuning mode.
7. The matching network of claim 1 wherein, when a plasma impedance of the plasma chamber changes, the control circuit is further configured to repeat (a) the instruction to alter the variable capacitance and (b) the instruction to alter the variable RF source frequency.
8. The matching network of claim 1 wherein the at least one electronically variable capacitor comprises:
a series EVC having a series variable capacitance, the series EVC operably coupled in series between the RF input and the RF output; and
a shunt EVC having a shunt variable capacitance, the shunt EVC operably coupled in parallel between a ground and one of the RF input and the RF output;
wherein the alteration of the variable capacitance comprises altering at least one of the series variable capacitance and the shunt variable capacitance.
9. The matching network of claim 8 wherein the series EVC comprises a first plurality of capacitors, and the shunt EVC comprises a second plurality of capacitors.
10. The matching network of claim 9 wherein the matching network further comprises an inductor operably coupled in series between the RF input and the RF output.
11. The matching network of claim 10 wherein the control circuit is further configured to:
determine a variable plasma impedance of the plasma chamber; and
determine a series capacitance value for the series variable capacitance and a shunt capacitance value for the shunt variable capacitance;
wherein the alteration of the variable capacitance comprises at least one of (a) altering the series variable capacitance to the series capacitance value and (b) altering the shunt variable capacitance to the shunt capacitance value.
12. The matching network of claim 11 wherein the alteration of the variable capacitance is caused by at least one of a plurality of switching circuits, wherein each of the plurality of switching circuits is configured to switch one capacitor of the first plurality of capacitors and the second plurality of capacitors.
13. The matching network of claim 12 wherein each switching circuit comprises:
an electronic switch electrically coupled to the one capacitor; and
a driver circuit having a common output electrically coupled to the electronic switch, the driver circuit comprising:
a first power switch receiving a common input signal and a first voltage and configured to switchably provide the first voltage to the common output in response to the common input signal, the first power switch comprising at least one optocoupler phototransistor; and
a second power switch receiving the common input signal and a second voltage and configured to switchably provide the second voltage to the common output in response to the common input signal, wherein:
the second voltage is opposite in polarity to the first voltage; and
the first power switch and the second power switch are configured to asynchronously provide the first voltage and the second voltage, respectively, to the common output in response to the common input signal, the electronic switch being switched according to the first voltage or the second voltage being provided to the common output.
14. The matching network of claim 1 wherein the alteration of the variable capacitance comprises reducing and/or increasing the variable capacitance based on an intermediate reflection parameter value.
15. The matching network of claim 1 wherein the alteration of the variable RF source frequency comprises reducing and/or increasing the variable RF source frequency based on an intermediate reflection parameter value.
16. The matching network of claim 15 wherein the variable RF source frequency is reduced and/or increased by a first amount and by a second amount, wherein the second amount is less than the first amount.
17. The matching network of claim 16 wherein the alteration of the variable source frequency comprises:
a) reducing the variable RF source frequency by a first amount;
b) determining the intermediate reflection parameter value at the RF source output;
c) if the intermediate reflection parameter value decreases, repeating steps a) and b;
d) if the intermediate reflection parameter value increases:
i) increasing the variable source frequency by the second amount;
ii) determining a new intermediate reflection parameter value; and
iii) if the new intermediate reflection parameter value decreases, repeating steps i) and ii).
18. A method of impedance matching comprising:
operably coupling an RF source to an impedance matching network;
operably coupling the matching network to a plasma chamber;
altering a variable capacitance of at least one electronically variable capacitor (EVC) of the matching network, the alteration of the variable capacitance causing achievement of a preliminary match state, the preliminary match state having an associated first reflection parameter value at an RF source output;
upon the achievement of the preliminary match state, altering a variable RF source frequency of the RF source, the alteration of the variable RF source frequency causing a final match state, the final match state having an associated second reflection parameter value at the RF source output, wherein the second reflection parameter value is less than the first reflection parameter value; and
when a subsequent reflection parameter value at the RF source output exceeds a predetermined value, again altering the variable capacitance and the variable RF source frequency.
19. The method of claim 18 wherein:
prior to achievement of the preliminary match state, the matching network is in an auto tuning mode in which the variable capacitance can be altered;
after achievement of the preliminary match state, the matching network is in a manual tuning mode in which the variable capacitance cannot be altered; and
after achievement of the final match state, the matching network re-enters the auto tuning mode.
20. A method of manufacturing a semiconductor comprising:
placing a substrate in a plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate; and
energizing plasma within the plasma chamber by coupling RF power from an RF source into the plasma chamber to perform a deposition or etching, and while energizing the plasma:
operably coupling the RF source to an impedance matching network;
operably coupling the matching network to the plasma chamber;
altering a variable capacitance of at least one electronically variable capacitor (EVC) of the matching network, the alteration of the variable capacitance causing achievement of a preliminary match state, the preliminary match state having an associated first reflection parameter value at an RF source output;
upon the achievement of the preliminary match state, altering a variable RF source frequency of the RF source, the alteration of the variable RF source frequency causing a final match state, the final match state having an associated second reflection parameter value at the RF source output, wherein the second reflection parameter value is less than the first reflection parameter value; and
when a subsequent reflection parameter value at the RF source output exceeds a predetermined value, again altering the variable capacitance and the variable RF source frequency.