Semiconductor device, having conductive pattern and electronic apparatus
View Patent ↗There is provided a conductive pattern forming method that can suppress shape abnormalities caused by the reattachment of a neodymium component. A conductive pattern forming method according to an aspect of the invention includes forming an aluminum-neodymium alloy film on a base material; forming, on the aluminum-neodymium alloy film, a conductive film having a thickness greater than or equal to ¼ times the thickness of the aluminum-neodymium alloy film; and patterning the aluminum-neodymium alloy film and the conductive film by using dry etching.
1. A semiconductor device comprising a first gate electrode formed by using a forming method including:
forming an aluminum-neodymium alloy film on a base material;
forming, on the aluminum-neodymium alloy film, a conductive film having a thickness greater than or equal to ¼ times a thickness of the aluminum-neodymium alloy film; and
patterning the aluminum-neodymium alloy film and the conductive film by using dry etching,
a gap between the first gate electrode and a second gate electrode that is provided adjacent to the first gate electrode being 10 μm or less.
2. An electronic apparatus comprising the semiconductor device according to claim 1 .
3. A semiconductor device comprising:
a first gate electrode including
an aluminum-neodymium alloy film, and
a conductive film that is laminated on the aluminum-neodymium alloy film and has a thickness greater than or equal to ¼ times a thickness of the aluminum-neodymium alloy film;
an insulating film that is provided on the first gate electrode; and
a wiring that is provided on the insulating film,
a gap between the first gate electrode and a second gate electrode that is provided adjacent to the first gate electrode being 10 μm or less.
4. The semiconductor device according to claim 3 ,
wherein the first gate electrode constitutes at least one of a gate line and a source line.
5. The semiconductor device according to claim 3 ,
wherein the aluminum-neodymium alloy film is formed on a barrier film, and
the barrier film contains titanium.
6. An electronic apparatus comprising the semiconductor device according to claim 3 .
7. A semiconductor device comprising:
a first wiring including
an aluminum-neodymium alloy film, and
a conductive film that is laminated on the aluminum-neodymium alloy film and has a thickness greater than or equal to ¼ times a thickness of the aluminum-neodymium alloy film;
an insulating film that is provided on the first wiring; and
a pixel electrode that is provided on the insulating film,
a gap between the first wiring and a second wiring that is provided adjacent to the first wiring being 10 μm or less.