IP Library Granted Patent US 9,949,385
Granted Patent B2
US 9,949,385 · App. 14/790,437 · Granted Apr 17, 2018

Semiconductor module with ultrasonically welded terminals

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Quick Facts
Patent No.
US 9,949,385
App. No.
14/790,437
Granted
Apr 17, 2018
Kind
B2
Abstract

A semiconductor module includes a base plate, a substrate on the base plate and carrying at least one semiconductor chip, a housing attached to the base plate and at least partially enclosing the substrate, and at least one terminal having one end which protrudes from the housing and another end which has a terminal foot attached on a terminal pad of the metallization by means of ultrasonic welding. The housing has a protective wall which encloses the terminal and divides an interior space of the housing into an unprotected region and a protected region. The protective wall is formed such that a gap is formed between the substrate and the protective wall. The gap is designed to carry a fluid flow such that particles produced during the ultrasonic welding of the terminal foot to the terminal pad are prevented from penetrating into the protected region from the unprotected region.

Claims (48)

1. A semiconductor module comprising:

a base plate;

a substrate on the base plate, the substrate having a metallization on at least one side and carrying at least one semiconductor chip;

a housing which is attached to the base plate and which at least partially encloses the substrate; and

at least one terminal having one end which protrudes from the housing and another end which has a terminal foot, the terminal foot being attached on a terminal pad of the metallization by means of ultrasonic welding,

wherein the housing has a protective wall which encloses the terminal and divides an interior space of the housing into an unprotected region and a protected region, and

wherein the protective wall is formed such that a gap is formed between the substrate and the protective wall, the gap connecting the protected and unprotected regions to allow air to flow between the protected and unprotected regions through the pap, the gap thereby being arranged to carry a fluid flow such that particles produced during the ultrasonic welding of the terminal foot to the terminal pad are prevented from penetrating into the protected region from the unprotected region.

2. The semiconductor module as claimed in claim 1 , wherein the housing includes an inlet opening which opens out into the protected region which provides a passageway through which a fluid can be blown into the protected region.

3. The semiconductor module as claimed in claim 2 , wherein the inlet opening is closed by a housing insert.

4. The semiconductor module as claimed in claim 1 , wherein the housing includes an outlet opening which leads at least one of into the unprotected region and to the terminal foot by way of a channel formed by the protective wall.

5. The semiconductor module as claimed in claim 4 , wherein the outlet opening is closed by a housing insert.

6. The semiconductor module as claimed in claim 4 , wherein the terminal protrudes from the outlet opening.

7. The semiconductor module as claimed in claim 2 , wherein the housing includes an outlet opening which leads at least one of into the unprotected region and to the terminal foot by way of a channel formed by the protective wall.

8. The semiconductor module as claimed in claim 7 , wherein the outlet opening is closed by a housing insert.

9. The semiconductor module as claimed in claim 8 , wherein the terminal protrudes from the outlet opening.

10. The semiconductor module as claimed in claim 1 , wherein the housing encloses the protected region completely, apart from an inlet opening.

11. The semiconductor module as claimed in claim 2 , wherein the housing encloses the protected region completely, apart from the inlet opening.

12. The semiconductor module as claimed in claim 1 , wherein:

the housing includes a cover plate and a side wall, the cover plate being fastened to the base plate by the side wall of the housing; and

the protective wall is connected to the cover plate and protrudes into the interior space of the housing.

13. The semiconductor module as claimed in claim 12 , comprising:

at least one of an outlet opening and an inlet opening provided in the cover plate.

14. The semiconductor module as claimed in claim 2 , wherein:

the housing includes a cover plate and a side wall, the cover plate being fastened to the base plate by the side wall of the housing;

the inlet opening is provided in the cover plate; and

the protective wall is connected to the cover plate and protrudes into the interior space of the housing.

15. The semiconductor module as claimed in claim 4 , wherein:

the housing includes a cover plate and a side wall, the cover plate being fastened to the base plate by the side wall of the housing;

the outlet opening is provided in the cover plate; and

the protective wall is connected to the cover plate and protrudes into the interior space of the housing.

16. The semiconductor module as claimed in claim 7 , wherein:

the housing includes a cover plate and a side wall, the cover plate being fastened to the base plate by the side wall of the housing;

at least one of the outlet opening and the inlet opening is provided in the cover plate; and

the protective wall is connected to the cover plate and protrudes into the interior space of the housing.

17. The semiconductor module as claimed in claim 1 , wherein at least one of the at least one semiconductor chip and exposed zones of the substrate without metallization are arranged in the protected region.

18. The semiconductor module as claimed in claim 1 , wherein the gap has a thickness of 0.2 to 4 times that of the terminal foot.

19. The semiconductor module as claimed in claim 1 , wherein the gap has a thickness of 0.4 to 2 times that of the terminal foot.

20. The semiconductor module as claimed in claim 1 , wherein a plurality of the terminals are surrounded by the protective wall.

21. The semiconductor module as claimed in claim 1 , wherein the at least one terminal is angled away at the end that protrudes from the housing and reaches around the housing.

22. A method for producing a semiconductor module, the method comprising:

providing a semiconductor module having a base plate, a substrate on the base plate, and a housing which is attached to the base plate and at least partially enclosing the substrate, the substrate having a metallization on at least one side and carrying at least one semiconductor chip;

placing a terminal foot of a terminal on a terminal pad of the substrate that is surrounded by a protective wall of the housing, the protective wall dividing an interior space of the housing into an unprotected region and a protected region, the terminal having one end which protrudes from the housing and another end being the terminal foot;

placing a sonotrode on the terminal foot and ultrasonically welding the terminal foot to the substrate; and

producing a fluid flow in a gap between the protective wall and the substrate from the protected region into the unprotected region so that particles produced during the ultrasonic welding are prevented from passing from the unprotected region into the protected region, the gap connecting the protected and unprotected regions to allow air to flow between the protected and unprotected regions through the gap.

23. The process as claimed in claim 22 , wherein the fluid flow is produced by blowing fluid into the protected region.

24. The semiconductor module as claimed in claim 1 , wherein the at least one semiconductor chip is arranged in the protected region.

25. The semiconductor module as claimed in claim 1 , wherein the at least one terminal is an electrical terminal for electrically connecting a component to the at least one semiconductor chip.

26. The semiconductor module as claimed in claim 1 , wherein a portion of the protective wall dividing the interior space of the housing into the unprotected region and the protected region does not contact the substrate, the gap thereby being formed between the portion and the substrate.

Assignments (5)
MERGER Recorded Nov 13, 2023
From: HITACHI ENERGY SWITZERLAND AG
To: HITACHI ENERGY LTD
Reel/Frame 065549/0576 →
CORRECTIVE ASSIGNMENT TO CORRECT THE CONVEYING PARTY "ABB TECHNOLOGY LTD."SHOULD READ "ABB TECHNOLOGY AG" PREVIOUSLY RECORDED AT REEL: 040621 FRAME: 0853. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded May 11, 2022
From: ABB TECHNOLOGY AG.
To: ABB SCHWEIZ AG
Reel/Frame 059927/0758 →
CHANGE OF NAME Recorded Dec 31, 2021
From: ABB POWER GRIDS SWITZERLAND AG
To: HITACHI ENERGY SWITZERLAND AG
Reel/Frame 058666/0540 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 6, 2020
From: ABB SCHWEIZ AG
To: ABB POWER GRIDS SWITZERLAND AG
Reel/Frame 052916/0001 →
MERGER Recorded Nov 15, 2016
From: ABB TECHNOLOGY LTD.
To: ABB SCHWEIZ AG
Reel/Frame 040621/0853 →