Method and apparatus for fractional skin treatment
View Patent ↗An apparatus for cosmetic RF skin treatment where the RF energy supply is isolated from the patient treated, such that in course of treatment no undesired current flows through the subject body.
1. An RF skin treatment apparatus, comprising:
an RF voltage source configured to connect to a tip to apply an RF pulse to skin in order to achieve a desired skin effect; and
at least one processor configured to:
monitor skin impedance as the RF pulse is applied to the skin;
compare the monitored skin impedance to a lower threshold, wherein the lower threshold corresponds to an impedance of wet skin; and
increase a time of the RF pulse when the monitored skin impedance is below the lower threshold until an increase in resistance is detected.
2. The RF skin treatment apparatus of claim 1 , wherein the at least one processor is further configured to:
compare the monitored skin impedance to an upper threshold; and
a) determine that the monitored skin impedance is below the lower threshold, and provide a wet skin notification to an operator of the skin treatment apparatus indicative of a low value of skin resistance and a need to dry the skin, or
b) determine that the monitored skin impedance is above the upper threshold, and provide a tip notification to the operator indicative of a need to check for proper attachment of the tip or a need to clean the tip.
3. The RF skin treatment apparatus of claim 2 , wherein the at least one processor is further configured to provide a high resistance notification advising the operator of a high value of resistance above the upper threshold when the monitored skin impedance is above the upper threshold.
4. The RF skin treatment apparatus of claim 2 , wherein the at least one processor is further configured to cut the RF pulse when the monitored skin impedance is above the upper threshold.
5. The RF skin treatment apparatus of claim 2 , wherein at least one of the upper threshold and the lower threshold are chosen to minimize pain to a subject under treatment.
6. The RF skin treatment apparatus of claim 2 , wherein the at least one processor is further configured to provide the wet skin notification and the tip notification.
7. The RF skin treatment apparatus of claim 2 , wherein the at least one processor is configured to provide the wet skin notification to the operator indicative of the need to dry the skin when the monitored skin impedance is below the lower threshold; and to provide the tip notification to the operator indicative of at least one of the need to check for proper attachment of the tip or the need to clean the tip when the monitored skin impedance is above the upper threshold.
8. The RF skin treatment apparatus of claim 2 , further comprising a switch configured to direct current to an energy absorbing element when the monitored skin impedance is above the upper threshold.
9. The RF skin treatment apparatus of claim 1 , wherein the desired skin effect includes at least one of wrinkle reduction, hair removal, collagen shrinking, collagen destruction, and skin rejuvenation.
10. The RF skin treatment apparatus of claim 1 , wherein the RF voltage source and the at least one processor are configured to cause fractional skin ablation.
11. The RF skin treatment apparatus of claim 1 , wherein the RF voltage source and the at least one processor are configured to cause fractional skin treatment.
12. The RF skin treatment apparatus of claim 1 , wherein the at least one processor is further configured to provide an inefficient pulse notification advising the operator to exclude inefficient pulses.
13. The RF skin treatment apparatus of claim 1 , wherein the at least one processor is further configured to provide a low resistance notification advising the operator of a low value of resistance below the lower threshold when the monitored skin impedance is below the lower threshold.
14. The RF skin treatment apparatus of claim 1 , wherein the RF voltage source and the at least one processor are further configured to deliver RF energy to electrodes on the tip.
15. The RF skin treatment apparatus of claim 14 , wherein the tip has an asymmetrical electrode arrangement.
16. The RF skin treatment apparatus of claim 15 , wherein the asymmetrical electrode arrangement includes at least one electrode having a size greater than a size of another electrode.
17. The RF skin treatment apparatus of claim 15 , wherein the asymmetrical electrode arrangement includes a plurality of energy applying electrodes including electrodes of a first size, and at least one larger electrode of a second size located at a periphery of the plurality of energy applying electrodes, the second size being substantially greater than the first size.
18. The RF skin treatment apparatus of claim 17 , wherein a combined area of the at least one larger electrode is substantially greater than a combined area of the energy applying electrodes.
19. The RF skin treatment apparatus of claim 14 , wherein the RF voltage source and the at least one processor are configured to cause ablation in tissue below the electrodes.
20. The RF skin treatment apparatus of claim 1 , wherein the at least one processor is part of a control circuit.
21. The RF skin treatment apparatus of claim 1 , wherein the at least one processor is configured to monitor skin impedance by measuring current.
22. The RF skin treatment apparatus of claim 1 , wherein the at least one processor is configured to monitor skin impedance by sampling substantially continuously.
23. The RF skin treatment apparatus of claim 1 , wherein the at least one processor is configured to monitor skin impedance by sampling every few tens of a microsecond.