Imaging device for electromagnetic radiation

1. An imaging device for electromagnetic radiation, the imaging device comprising:

a layered structure including

a plurality of individual detection elements,

a plurality of read-out boards, and

a base board; wherein

each respective detection element among the plurality of individual detection elements corresponds to a respective read-out board among the plurality of read-out boards,

each respective read-out board includes read-out electronics on an external surface thereof, the external surface being a surface of the respective read-out board most proximate to a surface of the respective detection element corresponding to the respective read-out board, the read-out electronics configured to read out signals generated by the respective detection element corresponding to the respective read-out board,

each respective detection element includes at least one contact pin physically contacting a corresponding one of a plurality of first solder contacts, the corresponding one of the plurality of first solder contacts also physically contacting the read-out electronics of the respective read-out board corresponding to the respective detection element,

each respective read-out board further includes a plurality of through-contacts carrying data signals, the plurality of through-contacts passing entirely through the respective read-out board, the plurality of through-contacts being centrally located relative to an array of the plurality of first solder contacts on the respective read-out board, and the plurality of through-contacts being spaced evenly across the entire respective read-out board, and

each respective read-out board is electrically connected with the base board via a plurality of second solder contacts.

2. The imaging device of claim 1 , wherein

an inner wall of each of the plurality of through-contacts is clad with a conductive material.

3. The imaging device of claim 2 , wherein

each respective detection element includes a conversion layer;

a plurality of contact pins are attached to a side of the conversion layer; and

each respective detection element is connected with the corresponding respective read-out board via the array of the plurality of first solder contacts and the plurality of contact pins.

4. The imaging device of claim 3 , wherein

each respective conversion layer includes at least one semiconductor material; and

the at least one semiconductor material includes at least one of cadmium telluride, zinc telluride, cadmium selenide, zinc selenide, manganese telluride, indium phosphide, mercury(II)-iodide and thallium(I,III)-bromide.

5. The imaging device of claim 2 , wherein the plurality of first solder contacts include at least one of tin-bismuth, tin-bismuth-silver, tin-bismuth-lead, tin-indium, indium-silver and indium.

6. The imaging device of claim 2 , wherein the plurality of second solder contacts include at least one of tin-bismuth, tin-bismuth-silver, tin-bismuth-lead, tin-indium, indium-silver and indium.

7. The imaging device of claim 2 , wherein

each respective detection element includes a plate having a polygonal shape; and

each respective detection element covers substantially the same area as the corresponding respective read-out board.

8. The imaging device of claim 7 , wherein at least a portion of the base board is substantially covered by the plurality of individual detection elements or corresponding ones of the plurality of read-out boards.

9. The imaging device of claim 8 , wherein each of the plurality of individual detection elements has a rectangular shape.

10. The imaging device of claim 1 , wherein

each respective detection element includes a conversion layer;

a plurality of contact pins are attached to a side of the conversion layer; and

each respective detection element is connected with the corresponding respective read-out board via the array of the plurality of first solder contacts and the plurality of contact pins.

11. The imaging device of claim 10 , wherein

each respective conversion layer includes at least one semiconductor material; and

the at least one semiconductor material includes at least one of cadmium telluride, zinc telluride, cadmium selenide, zinc selenide, manganese telluride, indium phosphide, mercury(II)-iodide and thallium(I,III)-bromide.

12. The imaging device of claim 1 , wherein the plurality of first solder contacts include at least one of tin-bismuth, tin-bismuth-silver, tin-bismuth-lead, tin-indium, indium-silver and indium.

13. The imaging device of claim 12 , wherein the plurality of second solder contacts include at least one of tin-bismuth, tin-bismuth-silver, tin-bismuth-lead, tin-indium, indium-silver and indium.

14. The imaging device claim 1 , wherein the plurality of second solder contacts include at least one of tin-bismuth, tin-bismuth-silver, tin-bismuth-lead, tin-indium, indium-silver and indium.

15. The imaging device of claim 1 , wherein

each respective detection element includes a plate having a polygonal shape; and

each respective detection element covers substantially the same area as the corresponding respective read-out board.

16. The imaging device of claim 15 , wherein at least a portion of an area of the base board is substantially covered by the plurality of individual detection elements or corresponding ones of the plurality of read-out boards.

17. The imaging device of claim 16 , wherein each of the plurality of individual detection elements has a rectangular shape.

18. An x-ray detector, including at least one imaging device of claim 1 .

19. The x-ray detector of claim 18 , wherein the x-ray detector is a photon-counting x-ray detector.

20. The imaging device of claim 1 , wherein the electromagnetic radiation is at least one of x-ray and gamma radiation.

21. The imaging device of claim 1 , wherein the plurality of first solder contacts have a higher melting point than the plurality of second solder contacts.