Optoelectronic semiconductor component

1. A method of producing an optoelectronic semiconductor component, comprising the following steps:

providing a connection carrier with a mounting face;

attaching and electrically contacting an optoelectronic semiconductor chip to the mounting face;

molding a radiation-transmissive body around the optoelectronic semiconductor chip; and

sawing the radiation-transmissive body at an angle of <90° to the mounting face of the connection carrier in order at least in places to produce a side face of the radiation-transmissive body;

wherein the side face extends at least in places at an angle of less than 90° to the mounting face of the connection carrier; and

wherein the radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner and

wherein the optoelectronic semiconductor chip emits or receives light during its operation and the radiation-transmissive body is transmissive to the light emitted or received by the optoelectronic semiconductor chip.

2. The method according to claim 1 , further comprising a step of sawing the radiation-transmissive body entirely at an angle of <90° to the mounting face of the connection carrier in order to produce four side faces of the radiation-transmissive body, such that the radiation-transmissive body takes the form of a truncated pyramid.

3. The method according to claim 1 , wherein a planarisation layer is sprayed onto the side face of the radiation-transmissive body that is produced by sawing.

4. The method according to claim 1 , further comprising a step of arranging at least one layer between the radiation-transmission body and the connection carrier, wherein the layer increases the adhesion between the radiation-transmissive body and the connection carrier.

5. The method according to claim 4 , wherein the radiation-transmissive body contains a silicone and the layer comprises a silicone foil.

6. The method according to claim 1 , wherein the connection carrier forms part of the casting.

7. The method according to claim 1 , wherein the connection carrier comprises a base member made of a ceramic material, and wherein the base member has a thickness of to at least 100 μm and at most 400 μm.

8. The method according to claim 6 , wherein the connection carrier comprises a base member, wherein the radiation-transmissive body directly adjoins the mounting face of the connection carrier.

9. The method according to claim 1 , wherein the connection carrier has saw markings on the mounting face that define the position of the radiation-transmissive body relative to the semiconductor chip.

10. The method according to claim 1 , wherein different shaped saw blades are used.

11. The method according to claim 1 , wherein material of the radiation-transmissive body is torn out during sawing forming singulation traces in the radiation-transmissive body.

12. The method according to claim 11 , wherein the singulation traces comprise indentations in the radiation-transmissive body.

13. The method according to claim 1 , wherein four side faces of the radiation-transmissive body are produced by sawing the radiation-transmissive body,

wherein each of the four side faces extends completely at an angle of less than 90° to the mounting face, such that the radiation-transmissive body takes the form of a truncated pyramid,

wherein each of the four side faces is produced in its entirety by sawing the radiation-transmissive body, and

wherein the radiation-transmissive body comprises at least one side face, which extends at least in places at an angle of between 60° and 70° to the mounting face.