Semiconductor device and method of producing semiconductor device
View Patent ↗A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.
1. A semiconductor device comprising:
a substrate;
a region that includes an element on the substrate;
a first insulating film formed above the substrate;
a first metal line extending along an edge of the substrate, the first metal line including a plurality of first wirings, a single upper most wiring of the first wirings being formed in the first insulating film, and at least the single upper most wiring of the first wirings surrounding the region in a plan view;
a second metal line extending along the edge of the substrate, the second metal line including a plurality of second wirings, an upper most wiring of the second wirings being formed in the first insulating film;
a frame-shaped shield that surrounds the region, the first metal line being located between the second metal line and the frame-shaped shield in a plan view, the frame shaped shield including a plurality of third wirings;
a second insulating film formed above the first metal line and the second metal line;
a groove formed in the second insulating film and overlapped with the first metal line in a plan view, the groove extending along with the first metal line; and
a first dual damascene structure and a second dual damascene structure,
wherein
the second metal line is formed at a position deviated from the groove in a plan view, the first metal line includes a plurality of first vias,
the first vias are formed of copper,
the first dual damascene structure is composed of one of the first wirings and one of the first vias,
the frame-shaped shield includes a plurality of third vias,
the third vias are formed of copper, and
the second dual damascene structure is composed of one of the third wirings and one of the third vias.
2. The semiconductor device according to claim 1 , wherein
a number of layers of the first wirings is seven,
a number of layers of the second wirings is seven, and
a number of layers of the third wirings that is formed of copper is seven.
3. The semiconductor device according to claim 1 , wherein a bottom of the groove is located above the single upper most wiring of the first wirings.
4. The semiconductor device according to claim 3 , wherein the bottom of the groove is above the single upper most wiring of the third wirings.
5. The semiconductor device according to claim 1 , wherein a bottom of the groove is located apart from the first metal line.
6. The semiconductor device according to claim 1 , wherein the groove includes discontinuous portions.
7. The semiconductor device according to claim 6 , wherein
the substrate includes four corners, and
the discontinuous portions are located at each of four corners.
8. The semiconductor device according to claim 1 , wherein the first metal line is connected to the substrate.
9. The semiconductor device according to claim 1 , wherein
the first wiring is formed of copper, and
the second wiring is formed of copper.
10. The semiconductor device according to claim 9 , wherein
the first wiring includes a first film located between the copper of the first wiring and the first insulating film,
the first film includes tantalum,
the second wiring includes a second film located between the copper of the second wiring and the first insulating film, and
the second film includes tantalum.
11. The semiconductor device according to claim 1 , wherein the single upper most wiring of the first wirings surrounding the region in a plan view is frame-shaped.