Reusable semiconductor substrates
View Patent ↗In example implementations, a plurality of material layers and a plurality of etch stop layers are grown on a first substrate. Ions are implanted through at least one material layer of the plurality of material layers into an etch stop layer of the plurality of etch stop layers to create defects in the etch stop layer. A first material layer of the substrate is bonded to a second substrate. The etch stop layer is split to remove the first substrate from the second substrate. The first substrate is reused to bond another material layer of the plurality of material layers to a third substrate.
1. A composite substrate, comprising:
a first substrate; and
a second substrate comprising a stack that is bonded to the first substrate, wherein the first substrate includes a trench on a surface that bonds to the second substrate, wherein the stack comprises a plurality of material layers having an etch stop layer between each one of the plurality of material layers, wherein an etch stop layer that is closest to the first substrate comprises defects caused by an ion implantation process, wherein the etch stop layer that is closest to the first substrate is split at the defects such that a plurality of remaining material layers of the second substrate is reusable for bonding to another substrate.
2. The composite substrate of claim 1 , wherein the first substrate comprises a first semiconductor and each one of the plurality of material layers comprises a second semiconductor different from the first semiconductor.
3. The composite substrate of claim 1 , wherein each one of the plurality of material layers comprises a different material.
4. The composite substrate of claim 1 , wherein the ion implantation process implants hydrogen ions.
5. The composite substrate of claim 1 , wherein at least one of the plurality of material layers comprises a plurality of thin layers to form a multiple quantum well structure.
6. A composite substrate, comprising:
a first substrate comprising a trench; and
a second substrate coupled to a surface of the first substrate that includes the trench, wherein the second substrate comprises at least one material layer and at least one etch stop layer, wherein an etch stop layer of the at least one etch stop layer that is closest to the first substrate comprises a first remaining portion that is split from a second remaining portion of the etch stop layer that is coupled to a second material layer along defects caused by an ion implantation process.
7. The composite substrate of claim 6 , wherein the first substrate comprises a first semiconductor and the at least one material layer comprises a second semiconductor different from the first semiconductor.
8. The composite substrate of claim 6 , wherein the at least one material layer comprises a plurality of material layers and each one of the plurality of material layers comprises a different material.
9. The composite substrate of claim 6 , wherein the ion implantation process implants hydrogen ions.
10. The composite substrate of claim 6 , wherein the at least one material layer comprises a plurality of thin layers to form a multiple quantum well structure.