Composition for etching

1. An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:

a first inorganic acid;

at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound; and

a solvent,

wherein:

the second inorganic acid is at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, an anhydrous phosphoric acid, and a combination thereof; and

the silane compound is a compound represented by a first formula:

where each one of R 1 to R 4 is selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, and at least one of R 1 to R 4 is one of halogen or (C 1 -C 10 ) alkyl, and

wherein the composition comprises about 0.01 to about 15 wt % of the at least one of silane inorganic acid salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition.

2. The composition of claim 1 , wherein the first inorganic acid is at least one selected from the group consisting of a sulfuric acid, a nitric acid, a phosphoric acid, a silicic acid, a hydrofluoric acid, a boric acid, a hydrochloric acid, a perchloric acid, and a combination thereof.

3. The composition of claim 1 , wherein the composition further comprises about 0.01 to about 20 wt % of an ammonium based compound in respect to a total weight of the composition.

4. The composition of claim 1 , wherein the composition further comprises about 0.01 to about 1 wt % of a fluoride based compound in respect to a total weight of the composition.

5. An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:

a first inorganic acid;

at least one of silane inorganic acid salts produced by reaction between a polyphosphoric acid and a silane compound, wherein the at least one of silane inorganic acid salts includes a compound represented by a first formula:

where i) R 1 is selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, ii) n 1 is one of integer numbers from 1 to 4,iii) m 1 is one of integer numbers from 1 to 10, and iv) each one of R 2 to R 4 is hydrogen; and

a solvent, and

wherein the composition comprises about 0.01 to about 15 wt % of the at least one of silane inorganic acid salts, about 70 to about 99 wt % of the polyphosphroic acid, and the solvent comprising the remaining balance of the wt % of the composition.

6. The composition of claim 5 , wherein in the at least one of silane inorganic acid salts represented by the first formula, one of hydrogens selected from the group consisting of R 2 to R 4 is substituted by a substituent represented by a second formula:

where i) one of R 5 is a coupler to the second formula, ii) the others of R 5 are selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, iii) each one of R 2 to R 4 is hydrogen or substituted by a substituent represented by the third formula, iv) n 2 is one of integer numbers from 0 to 3, and v) m 2 is one of integer numbers from 1 to 10.

7. An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:

a first inorganic acid;

at least one of siloxane inorganic acid salts generated through reaction between a second inorganic add and a siloxane compound; and

a solvent,

wherein the second inorganic add is one selected from the group consisting of a sulfuric add, a fuming sulfuric add, and a combination thereof, and

wherein the composition comprises about 0.01 to about 15 wt % of the at least one of siloxane inorganic add salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition.

8. The composition of claim 7 , wherein the at least one of siloxane inorganic acid salts includes compounds represented by a sixth formula:

where i) each one of R 21 and R 22 is independently selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, ii) n 1 is one of integer numbers from 0 to 3, iii) n 2 is one of integer numbers from 0 to 2, iv) m 1 is one of integer numbers 0 and 1, v) a sum of n 1 , n 2 , and m 1 is equal or greater than 1 (n 1 +n 2 +m 1 ≧1), vi) l 1 is one of integer numbers from 1 to 10, and vii) each one of R 23 to R 25 is hydrogen.

9. The composition of claim 8 , wherein in the at least one of siloxane inorganic acid salts, at least one of hydrogens selected from the group consisting of R 23 to R 25 is substituted by a substituent expressed by a seventh formula:

where i) one of R 26 and R 27 is a coupler to the sixth formula, ii) the others are independently selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, iii) each one of R 23 to R 25 is hydrogen or is substituted by a substituent expressed by the seventh formula, iv) n 3 is one of integer numbers from 0 to 3, v) n 4 is one of integer numbers from 0 to 2, vi) m 1 is one of integer numbers from 0 to 1, and vii) l 1 is one of integer numbers from 1 to 10.

10. A etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:

a first inorganic acid;

at least one of siloxane inorganic acid salts produced through reaction induced between a second inorganic acid including a nitric acid and a siloxane compound; and

a solvent, and

wherein the composition comprises about 0.01 to about 15 wt % of the at least one of siloxane inorganic acid salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition.

11. The composition of claim 10 , wherein the at least one of siloxane inorganic acid salts includes compounds represented by an eighth formula:

where i) one of R 31 and R 32 is independently selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, ii) n 1 is one of integer numbers from 0 to 3, iii) n 2 is one of integer numbers from 0 to 2, iv) m 1 is one of integer numbers 0 and 1, v) a sum of n 1 , n 2 , and m 1 is equal or greater than 1 (n 1 +n 2 +m 1 ≧1), vi) l 1 is one of integer numbers from 1 to 10, and vii) each one of R 33 to R 35 is hydrogen.

12. The composition of claim 11 , wherein in the at least one of siloxane inorganic acid salts, at least one of hydrogen selected from the group consisting of R 33 to R 35 is substituted by a substituent expressed by a ninth formula:

where one of R 36 and R 37 is a coupler to the eighth formula, ii) the others are independently selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, iii) each one of R 33 to R 35 is hydrogen or substituted by a substituent expressed by the ninth formula, iv) n 3 is one of integer numbers from 0 to 3, v) n 4 is one of integer numbers from 0 to 2, vi) m 1 is one of integer numbers from 0 to 1, and vii) l 1 is one of integer numbers from 1 to 10.

13. An etching composition that selectively etches a nitride layer with respect to an oxide layer comprising:

a first inorganic acid;

at least one of silane inorganic acid salts generated by reaction induced between a second inorganic acid and a first silane compound;

a second silane compound; and

a solvent,

wherein the second inorganic acid is one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, an anhydrous phosphoric acid, a pyrophosphoric acid, a polyphosphoric acid, and a combination thereof,

wherein the first silane compound and the second silane compound are one selected from the group consisting of compounds represented by a tenth formula, compounds represented by an eleventh formula, and a combination thereof,

wherein the tenth formula is:

and

wherein the eleventh formula is:

where i) each one of R 1 to R 10 is selected from the group consisting of hydrogen, halogen, (C 1 -C 10 ) alkyl, (C 1 -C 10 ) alkoxy, and (C 6 -C 30 ) aryl, ii) at least one of R 1 to R 4 is one of halogen and (C 1 -C 10 ) alkoxy, iii) at least one of R 5 to R 10 is one of halogen and (C 1 -C 10 ) alkoxy, and iv) n is one of integer numbers from 1 to 10, and

wherein the composition comprises about 0.01 to about 15 wt % of the at least one of silane inorganic acid salts, about 70 to about 99 wt % of the first inorganic acid, and the solvent comprising the remaining balance of the wt % of the composition.